bundle (3)

Silicon NPN Phototransistor, RoHS Compliant

www.vishay.com For technical questions, contact: [email protected] Document Number: 81505346 Rev. 1.6, 05-Sep-08

BPV11FVishay Semiconductors

DESCRIPTIONBPV11F is a silicon NPN phototransistor with high radiantsensitivity in black, T-1¾ plastic package with base terminaland daylight blocking filter. Filter bandwidth is matched with900 nm to 950 nm IR emitters.

FEATURES• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• High radiant sensitivity

• Daylight blocking filter matched with 940 nmemitters

• Fast response times

• Angle of half sensitivity: ϕ = ± 15°

• Base terminal connected

• Lead (Pb)-free component in accordance withRoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS• Detector for industrial electronic circuitry, measurement

and control

NoteTest condition see table “Basic Characteristics”

NoteMOQ: minimum order quantity

NoteTamb = 25 °C, unless otherwise specified

12784

PRODUCT SUMMARYCOMPONENT Ica (mA) ϕ (deg) λ0.5 (nm)

BPV11F 9 ± 15 900 to 980

ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORM

BPV11F Bulk MOQ: 3000 pcs, 3000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGSPARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector base voltage VCBO 80 V

Collector emitter voltage VCEO 70 V

Emitter base voltage VEBO 5 V

Collector current IC 50 mA

Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA

Power dissipation Tamb ≤ 47 °C PV 150 mW

Junction temperature Tj 100 °C

Operating temperature range Tamb - 40 to + 100 °C

Storage temperature range Tstg - 40 to + 100 °C

Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C

Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W

Document Number: 81505 For technical questions, contact: [email protected] www.vishay.comRev. 1.6, 05-Sep-08 347

BPV11FSilicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

NoteTamb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICSTamb = 25 °C, unless otherwise specified

Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature

0

40

80

120

160

200

PV -

Pow

er D

issi

patio

n (m

W)

Tamb - Ambient Temperature (°C)100806040200

94 8300

RthJA

BASIC CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V

Collector emitter dark current VCE = 10 V, E = 0 ICEO 1 50 nA

DC current gain VCE = 5 V, IC = 5 mA, E = 0 hFE 450

Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 15 pF

Collector base capacitance VCE = 0 V, f = 1 MHz, E = 0 CCBO 19 pF

Collector light current Ee = 1 mW/cm2, λ = 950 nm,VCB = 5 V Ica 3 9 mA

Angle of half sensitivity ϕ ± 15 deg

Wavelength of peak sensitivity λp 930 nm

Range of spectral bandwidth λ0.5 900 to 980 nm

Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,IC = 1 mA VCEsat 130 300 mV

Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω ton 6 µs

Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω toff 5 µs

Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 Ω fc 110 kHz

94 8249

20

I CE

O -

Col

lect

or D

ark

Cur

rent

(nA

)

10040 60 80

Tamb - Ambient Temperature (°C)

10

101

102

103

104

VCE = 10 V

00.6

0.8

1.0

1.2

1.4

2.0

20 40 60 80 100

1.6

1.8

λ

94 8239 Tamb - Ambient Temperature (°C)

I ca r

el -

Rel

ativ

e C

olle

ctor

Cur

rent

VCE = 5 VEe = 1 mW/cm2

= 950 nm

www.vishay.com For technical questions, contact: [email protected] Document Number: 81505348 Rev. 1.6, 05-Sep-08

BPV11FVishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant

Fig. 4 - Collector Light Current vs. Irradiance

Fig. 5 - Collector Light Current vs. Collector Emitter Voltage

Fig. 6 - Amplification vs. Collector Current

Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage

Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage

Fig. 9 - Turn-on/Turn-off Time vs. Collector Current

0.01 0.1 10.01

0.1

1

10

100

I ca -

Col

lect

or L

ight

Cur

rent

(m

A)

Ee - Irradiance (mW/cm²)

10

94 8244

VCE = 5 Vλ = 950 nm

0.1 1 100.1

1

10

100

I ca -

Col

lect

or L

ight

Cur

rent

(m

A)

VCE - Collector Emitter Voltage (V)

100

94 8245

Ee = 1 mW/cm2

λ = 950 nm

0.5 mW/cm2

0.2 mW/cm2

0.1 mW/cm2

0.05 mW/cm2

0.02 mW/cm2

0.01 0.1 1 100

200

400

600

800

B -

Am

plifi

catio

n

IC - Collector Current (mA)

100

94 8250

VCE = 5 V

0.1 1 100

4

8

12

16

20

CC

BO -

Col

lect

or B

ase

Cap

acita

nce

(pF

)

VCB - Collector Base Voltage (V)

100

94 8246

f = 1 MHz

0.1 1 100

4

8

12

16

20

CC

EO -

Col

lect

or E

rmitt

er C

apac

itanc

e (p

F)

VCE - Collector Ermitter Voltage (V)

100

94 8247

f = 1 MHz

1612840

94 8253

0

2

4

6

8

12

t on/t of

f - T

urn-

on/T

urn-

off T

ime

(µs)

IC - Collector Current (mA)

10 VCE = 5 VRL = 100 Ωλ = 950 nm

toff

ton

Document Number: 81505 For technical questions, contact: [email protected] www.vishay.comRev. 1.6, 05-Sep-08 349

BPV11FSilicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors

Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

800 900 1000 1100

94 8258

0

0.2

0.4

0.6

0.8

1.0

S (λ)

- R

elat

ive

Spe

ctra

lSen

sitiv

ityre

l

– Wavelength (nm)λ

Sre

l - R

elat

ive

Sen

sitiv

ity

94 8248

0.6

0.9

0.8

0°30°

10° 20°

40°

50°

60°

70°

80°0.7

1.0

00.20.4

ϕ -

Ang

ular

Dis

plac

emen

t

Chip position

0.8 + 0.2- 0.1

Issue:1; 01.07.96

± 0

.15

Drawing-No.: 6.544-5188.01-4

specificationsaccording to DINtechnical drawings

0.5

Area not plane

± 0

.15

± 0

.3

± 0

.5

5.75

± 0.15

0.5

E B

5

± 0

.3

+ 0.15

0.8

C

1.5

± 0

.25

- 0.1+ 0.2

0.8 - 0.1+ 0.2

- 0.1+ 0.2

1.27 nom.2.54 nom.

12.3

(4.5

5)

7.6

35

< 0

.7

8.6

R 2.45 (sphere)

96 12200

Component Construction

Component ConstructionVishay Semiconductors

www.vishay.com For technical questions concerning emitters, contact: [email protected] Document Number: 800811 For technical questions concerning detectors, contact: [email protected] Rev. 1.3, 06-Jun-08

Photodetector and infrared emitter components are availablein plastic or metal packages.Plastic devices mostly include a lens to improve radiantsensitivity or radiant intensity. Detector chips are mounted onflat leadframe surfaces while leadframes for emitters have asilver plated reflector performing higher radiant intensity.Devices in metal packages are hermetically sealed, arereleased for extended operating temperature range andhave small optical and mechanical tolerances.

Plastic package

IRED chip

Reflector

AnodeCathode

AU-bond wire

Lead frame

94 8314

96 11621-1

Chip Bond wire

Reflector conefilled with epoxy

Leadframe

Polarity identification

Whiteplastic case

CathodeAnode

Black plastic packagedaylight blocking filter

PIN diode chip

Collimating lens

94 8165

Cathode

Anode

PIN diode chip

Metal can package

Glass window

94 8315

Document Number: 80083 For technical questions concerning emitters, contact: [email protected] www.vishay.comRev. 1.3, 17-Jun-08 For technical questions concerning detectors, contact: [email protected] 1

Type Designation Code

Type Designation CodeVishay Semiconductors

DETECTORS

IR EMITTERS

T, V = VishaySemiconductor

Detector

Series

Packagevarieties

Internalclassification

Technology

T = PhototransistorS = Photo Schmitt-TriggerP = PIN photodiodeD = Photodiode

E

18746

K = Side view mold

F = Plastic filterM = SMDP = Plastic

S = Side view

IR emitter

Series

Internalclassification

S

T, V = VishaySemiconductor Package design

D, F, L, T 1 = Dome SMDU, H 2 = 1.8 mmF 3 = 3 mm 4 = 3 mm without stand-offs 5 = 5 mm with stand-offs 6, 7, 8 = 5 mm without stand-offsT 7 = TO 18

Main typeDome SMDContact type0 = RGW2 = GW3 = Yoke4 = Axial

Selection type

18747

A = Extended powerF = High speed DH, 870 nmH = GaAlAs, 870 nmM = SMDS = Side view castedT = MetalU = GaAs, 950 nmK = Side view moldL = Leaded

A = 870 nm GaAlAsF = 870 nm GaAlAs/double hetero DHG = 830 nm/850 nm GaAlAs/double hetero DHL = 940 nm GaAlAs/GaAsS = 950 nm GaAs: SiB = Bulk emitter

Symbols and Terminology

Symbols and TerminologyVishay Semiconductors

www.vishay.com For technical questions concerning emitters, contact: [email protected] Document Number: 81252542 For technical questions concerning detectors, contact: [email protected] Rev. 1.3, 18-Aug-08

A Anode, anode terminalA Ampere, SI unit of electrical currentA Radiant sensitive area, that area which is radiant

sensitive for a specified rangea Distance, e.g. between the emitter (source) and

the detectorB Base, base terminalBER Bit Error Ratebit/s Data rate or signaling rate

1000 bit/s = 1 kbit/s, 106 bit/s = 1 Mbit/sC Capacitance, unit: F (farad) = C/VC Coulomb, C = s x AC Cathode, cathode terminal C Collector, collector terminal°C Degree Celsius, Celsius temperature, symbol t,

and is defined by the quantity equation t = T - T0. The unit of Celsius temperature is the degreeCelsius, symbol °C. The numerical value of aCelsius temperature t expressed in degreesCelsius is given by t/°C = T/K - 273.15 It follows from the definition of t that the degreeCelsius is equal in magnitude to the Kelvin, whichin turn implies that the numerical value of a giventemperature difference or temperature intervalwhose value is expressed in the unit degreeCelsius (°C) is equal to the numerical value of thesame difference or interval when its value isexpressed in the unit Kelvin (K).

CCEO Collector emitter capacitance, Capacitancebetween the collector and the emitter with open base

cd Candela, SI unit of luminous intensity. Thecandela is the luminous intensity, in a givendirection, of a source that emits monochromaticradiation of frequency 540 Hz x 1012 Hz and thathas a radiant intensity in that direction of 1/683 Wper steradian. (16th General Conference ofWeights and Measures, 1979), 1 cd = 1 lm ⋅ sr -1

CD Diode capacitance, total capacitance effectivebetween the diode terminals due to case, junctionand parasitic capacitances

Cj Junction capacitance, capacitance due to a p-njunction of a diode, decreases with increasingreverse voltage

d Apparent (of virtual) source size (of an emitter), the measured diameter of an optical source usedto calculate the eye safety laser class of thesource. See IEC 60825-1 and EN ISO 11146-1

D* Detectivity E Emitter, Emitter terminal (phototransistor)EA Illumination at standard illuminant A, according

to DIN 5033 and IEC 306-1, illumination emittedfrom a tungsten filament lamp with a colortemperature Tf = 2855.6 K, which is equivalent to

standard illuminant A, unit: lx (Lux) or klxEA amb Ambient illumination at standard illuminant Aecho-off Unprecise term to describe the behavior of the

output of IrDA® transceivers during transmission.“Echo-off” means that by blocking the receiver theoutput RXD is quiet during transmission

echo-on Unprecise term to describe the behavior of theoutput of IrDA® transceivers during transmission.“Echo-on” means that the receiver output RXD isactive but often undefined during transmission. Forcorrect data reception after transmission thereceiver channel must be cleared during thelatency period

Ee, E Irradiance (at a point of a surface), quotient of theradiant flux dΦe incident on an element of thesurface containing the point, by the area dA of thatelement. Equivalent definition. Integral, taken overthe hemisphere visible from the given point, of theexpression Le ⋅ cosθ ⋅ dΩ, where Le is the radianceat the given point in the various directions of theincident elementary beams of solid angle dΩ, andθ is the angle between any of these beams and thenormal to the surface at the given point

unit: W ⋅ m-2

Ev, E Illuminance (at a point of a surface), quotient ofthe luminous flux dΦv incident on an element of thesurface containing the point, by the area dA of thatelement. Equivalent definition. Integral, taken overthe hemisphere visible from the givenpoint, of theexpression Lv ⋅ cosθ ⋅ dΩ, where Lv is theluminance at the given point in the variousdirections of the incident elementary beams ofsolid angle dΩ, and θ is the angle between any ofthese beams and the normal to the surface at thegiven point

unit: lx = lm ⋅ m-2

F Farad, unit: F = C/V

f Frequency, unit: s-1, Hz (Hertz)fc, fcd Cut-off frequency - detector devices, the

frequency at which, for constant signal modulationdepth of the input radiant power, the demodulatedsignal power has decreased to ½ of its low frequencyvalue. Example: The incident radiation generates aphotocurrent or a photo voltage 0.707 times thevalue of radiation at f = 1 kHz (3 dB signal drop, other references may occur ase.g. 6 dB or 10 dB)

A NEP⁄

EedΦedA

------------------ Le θcos dΩ⋅ ⋅⎝ ⎠⎛ ⎞

2πsr∫= =

EvdΦvdA

----------------- Lv θcos dΩ⋅ ⋅⎝ ⎠⎛ ⎞

2πsr∫= =

Symbols and TerminologySymbols and Terminology Vishay Semiconductors

Document Number: 81252 For technical questions concerning emitters, contact: [email protected] www.vishay.comRev. 1.3, 18-Aug-08 For technical questions concerning detectors, contact: [email protected] 543

fs Switching frequency FIR Fast infrared, as SIR, data rate 4 Mbit/s

Ia Light current, general: current which flowsthrough a device due to irradiation/illumination

IB Base currentIBM Base peak currentIC Collector currentIca Collector light current, collector current under

irradiation. Collector current which flows at aspecified illumination/irradiation

ICEO Collector dark current, with open base,collector emitter dark current. For radiant sensitivedevices with open base and withoutillumination/radiation (E = 0)

ICM Repetitive peak collector currentidle Mode of operation where the device (e.g. a

transceiver) is fully operational and expecting toreceive a signal for operation e.g in case of atransceiver waiting to receive an optical input or tosend an optical output as response to an appliedelectrical signal.

Ie, I Radiant intensity (of a source, in a givendirection), quotient of the radiant flux d Φe leavingthe source and propagated in the element of solidangle dΩ containing the given direction, by theelement of solid angle. Ie = dΦe/dΩ, unit: W ⋅ sr -1 Note: The radiant intensity Ie of emitters is typicallymeasured with an angle < 0.01 sr on mechanicalaxis or off-axis in the maximum of the irradiationpattern.

IF Continuous forward current, the current flowingthrough a diode in the forward direction

IFAV Average (mean) forward currentIFM Peak forward currentIFSM Surge forward currentIk Short-circuit current, that value of the current

which flows when a photovoltaic cell or aphotodiode is short circuited (RL << Ri ) at itsterminals

Io DC output currentIph Photocurrent, that part of the output current of a

photoelectric detector, which is caused by incidentradiation.

IR Reverse current, leakage current, current whichflows through a reverse biased semiconductorp-n-junction

IR Abbreviation for infrared

Ira Reverse current under irradiation, reverse lightcurrent which flows due to a specifiedirradiation/illumination in a photoelectric device Ira = Iro + Iph

IrDA® Infrared Data Association, no profit organizationgenerating infrared data communication standards

IRED Infrared emitting diode, solid state deviceembodying a p-n junction, emitting infraredradiation when excited by an electric current. Seealso LED: solid state device embodying a p-njunction, emitting optical radiation when excited byan electric current.

Iro Reverse dark current, dark current, reversecurrent flowing through a photoelectric device inthe absence of irradiation

IRPHY Version 1.0, SIR IrDA®‚ data communicationspecification covering data rates from 2.4 kbit/sto 115.2 kbit/s and a guaranteed operating rangemore than one meter in a cone of ± 15°

IRPHY Version 1.1, MIR and FIR were implemented in theIrDA® standard with the version 1.1, replacingversion 1.0

IRPHY Version 1.2, added the SIR low power standard tothe IrDA® standard, replacing version 1.1. The SIRlow power standard describes a current savingimplementation with reduced range (min. 20 cm toother low power devices and min. 30 cm to fullrange devices).

IRPHY Version 1.3, extended the low power option to thehigher bit rates of MIR and FIR replacing version 1.2.

IRPHY Version 1.4, VFIR was added, replacing version 1.3

ISB Quiescent current

ISD Supply current in dark ambient

ISH Supply current in bright ambientIv, I Luminous intensity (of a source, in a given

direction), quotient of the luminous flux dΦv leavingthe source and propagated in the element of solidangle dΩ containing the given direction, by theelement of solid angle. Ie = dΦv/dΩ, unit: cd ⋅ sr -1

Note: The luminous intensity Iv of emitters istypically measured with an angle < 0.01 sr onmechanical axis or off-axis in the maximum of theirradiation pattern.

K luminous efficacy of radiation, quotient of theluminous flux Φv by the corresponding radiant fluxΦe: K = Φv / Φe, unit: lm ⋅ W-1 Note: When applied to monochromatic radiations,the maximum value of K(λ) is denoted by thesymbol Km. Km = 683 lm ⋅ W-1 for νm = 540 x 1012 Hz (λm ≈ 555 nm) for photopic vision. K'm = 1700 lm ⋅ W-1 for λ'm ≈ 507 nm for scotopicvision. For other wavelengths : K(λ) = Km V(λ) and K'(λ) = K'm V'(λ)

K Kelvin, SI unit of thermodynamic temperature, isthe fraction 1/273.15 of the thermodynamictemperature of the triple point of water(13th CGPM (1967), Resolution 4). The unit Kelvinand its symbol K should be used to express aninterval or a difference of temperature. Note: In addition to the thermodynamic


Symbols and TerminologyVishay Semiconductors Symbols and Terminology

temperature (symbol T), expressed in Kelvins, useis also made of Celsius temperature (symbol t)defined by the equation t = T - T0, whereT0 = 273.15 K by definition. To express Celsiustemperature, the unit “degree Celsius”, which isequal to the unit “Kelvin” is used; in this case,“degree Celsius” is a special name used in place of“Kelvin”. An interval or difference of Celsiustemperature can, however, be expressed inKelvins as well as in degrees Celsius.

Latency Receiver latency allowance (in ms or µs) is themaximum time after a node ceases transmittingbefore the node’s receiving recovers its specifiedsensitivity

LED and IRED Light Emitting Diode, LED: solid state deviceembodying a p-n junction, emitting opticalradiation when excited by an electric current. Theterm LED is correct only for visible radiation,because light is defined as visible radiation (seeRadiation and Light). For infrared emitting diodesthe term IRED is the correct term. Nevertheless itis common but not correct to use "LED" also forIREDs.

Le; L Radiance (in a given direction, at a given point ofa real or imaginary surface). Quantity defined by the formula

,

where dΦe is the radiant flux transmitted by anelementary beam passing through the given pointand propagating in the solid angle dΩ containingthe given direction; dA is the area of a section ofthat beam containing the given point; θ is the anglebetween the normal to that section and thedirection of the beam, unit: W ⋅ m-2 ⋅ sr -1

lm Lumen, unit for luminous fluxlx Lux, unit for illuminance m Meter, SI unit of lengthMe; M Radiant exitance (at a point of a surface) -

Quotient of the radiant flux dΦe leaving an elementof the surface containing the point, by the area dAof that element. Equivalent definition. Integral,taken over the hemisphere visible from the givenpoint, of the expression Le ⋅ cosθ ⋅ dΩ, where Le isthe radiance at the given point in the variousdirections of the emitted elementary beams ofsolid angle dΩ, and θ is the angle between any ofthese beams and the normal to the surface at thegiven point.

unit: W ⋅ m-2

MIR Medium speed IR, as SIR, with the data rate576 kbit/s to 1152 kbit/s

Mode Electrical input or output port of a transceiverdevice to set the receiver bandwidth

N.A. Numerical Aperture, N.A. = sin α/2Term used for the characteristic of sensitivity orintensity angles of fiber optics and objectives

NEP Noise equivalent powerPtot Total power dissipationPv Power dissipation, general

Radiation and LightVisible radiation, any optical radiation capable ofcausing a visual sensation directly.Note: There are no precise limits for the spectralrange of visible radiation since they depend uponthe amount of radiant power reaching the retinaand the responsivity of the observer. The lower limitis generally taken between 360 nm and 400 nmand the upper limit between 760 nm and 830 nm.

Radiation and Light Optical radiation, electromagnetic radiation atwavelengths between the region of transition toX-rays (λ = 1 nm) and the region of transition toradio waves (λ = 1 mm)

Radiation and Light IRInfrared radiation, optical radiation for which thewavelengths are longer than those for visibleradiation.Note: For infrared radiation, the range between780 nm and 1 mm is commonly sub-divided into:IR-A 780 nm to 1400 nmIR-B 1.4 µm to 3 µmIR-C 3 µm to 1 mm

RD Dark resistanceRF Feedback resistorRi Internal resistanceRis Isolation resistanceRL Load resistanceRS Serial resistanceRsh Shunt resistance, the shunt resistance of a

detector diode is the dynamic resistance of thediode at zero bias. Typically it is measured at avoltage of 10 mV forward or reverse, orpeak-to-peak

RthJA Thermal resistance, junction to ambientRthJC Thermal resistance, junction to caseRXD Electrical data output port of a transceiver device

s Second, SI-unit of time 1 h = 60 min = 3600 s

S Absolute sensitivity Ratio of the output value Y of a radiant-sensitivedevice to the input value X of a physical quantity:S = Y/X, units: e.g. A/lx, A/W, A/(W/m2)

s(λp) Spectral sensitivity at a wavelength λp

LedΦv

dA θcos dΩ⋅ ⋅----------------------------------------------------------=

Me

dΦe

dA----------- Le θcos d⋅ ⋅ Ω

2πsr∫= =



s(λ) Absolute spectral sensitivity at a wavelength λ,the ratio of the output quantity y to the radiant inputquantity x in the range of wavelengthsλ to λ + Δλ s(λ) = dy(λ)/dx(λ) E.g., the radiant power Φe(λ) at a specifiedwavelength λ falls on the radiationsensitive area ofa detector and generates a photocurrent Iph ⋅ s(λ)is the ratio between the generated photocurrentIph and the radiant power Φe(λ) which falls on thedetector. s(λ) = Iph / Φe(λ), unit: A/W

s(λ)rel Spectral sensitivity, relative, ratio of the spectralsensitivity s(λ) at any considered wavelength tothe spectral sensitivity s(λ0) at a certainwavelength λ0 taken as a reference s(λ)rel = s(λ)/s(λ0)

s(λ0) Spectral sensitivity at a reference wavelength λ0

SC Electrical input port of a transceiver device to setthe receiver sensitivity

SD Electrical input port of a transceiver device to shutdown the transceiver

ShutdownMode of operation where a device is switched to asleep mode (shut down) by an external signal orafter a quiescent period keeping some functionsalive to be prepared for a fast transition tooperating mode. Might be in some cases identicalwith “standby”

SIR Serial Infrared, term used by IrDA® to describeinfrared data transmission up to and including115.2 kbit/s. SIR IrDA® data communicationcovers 2.4 kbit/s to 115.2 kbit/s, equivalent to thebasic serial infrared standard introduced with thephysical layer version IrPhy version 1.0

Split power supplyTerm for using separated power supplies fordifferent functions in transceivers. Receivercircuits need well-controlled supply voltages. IREDdrivers do not need a controlled supply voltage butneed much higher currents. Therefore it safes costnot to control the IRED current supply and have aseparated supply. For that some modified designrules have to be taken into account for designingthe ASIC. This is used in nearly all Vishaytransceivers and is described in US-Patentno. 6,157,476

sr Steradian (sr), SI unit of solid angle Ω. Solid anglethat, having its vertex at the centre of a sphere,cuts off an area of the surface of the sphere equalto that of a square with sides of length equal to theradius of the sphere. (ISO, 31/1-2.1, 1978) Example: The unity solid angle, in terms ofgeometry, is the angle subtended at the center ofa sphere by an area on its surface numericallyequal to the square of the radius (see figuresbelow). Other than the figures might suggest, the

shape of the area does not matter at all. Any shapeon the surface of the sphere that holds the samearea will define a solid angle of the same size. Theunit of the solid angle is the steradian (sr).Mathematically, the solid angle is dimensionless,but for practical reasons, the steradian isassigned.

Standby Mode of operation where a device is prepared tobe quickly switched into an idle or operating modeby an external signal.

T Period of time (duration)T Temperature, 0 K = - 273.15 °C, unit: K (Kelvin)t Temperature, °C (degree Celsius). Instead of t

sometimes T is used not to mix up temperature Twith time t

t TimeTamb Ambient temperature, if self-heating is

significant: temperature of the surrounding airbelow the device, under conditions of thermalequilibrium. If self-heating is insignificant: airtemperature in the surroundings of the device

Tamb Ambient temperature range, as an absolutemaximum rating: the maximum permissibleambient temperature range

TC Temperature coefficient, the ratio of the relativechange of an electrical quantity to the change intemperature (ΔT) which causes it under otherwiseconstant operating conditions

TC Colour temperature (BE), the temperature of aPlanckian radiator whose radiation has the samechromaticity as that of a given stimulus, unit: K Note: The reciprocal colour temperature is alsoused, unit K-1 (BE).

Tcase Case temperature, the temperature measured ata specified point on the case of a semiconductordevice. Unless otherwise stated, this temperatureis given as the temperature of the mounting basefor devices with metal can

td Delay timetf Fall time, the time interval between the upper

specified value and the lower specified value onthe trailing edge of the pulse. Note: It is common to use a 90 % value of thesignal for the upper specified value and a 10 %value for the lower specified value.

Tj Junction temperature, the spatial mean value ofthe temperature during operation. In the case ofphototransistors, it is mainly the temperature of thecollector junction because its inherent temperatureis the maximum.

toff Turn-off time, the time interval between the upperspecified value on the trailing edge of the appliedinput pulse and the lower specified value an thetrailing edge of the output pulse. toff = td(off) + tf



ton Turn-on time, the time interval between the lowerspecified value on the trailing edge of the appliedinput pulse and the upper specified value an thetrailing edge of the output pulse. ton = td(on) + tf

tp Pulse duration, the time interval between thespecified value on the leading edge of the pulseand the specified value an the trailing edge of theoutput pulse. Note: In most cases the specified value is 50 % ofthe signal

tpi Input pulse durationtpo Output pulse durationtr Rise time, the time interval between the lower

specified value and the upper specified value onthe trailing edge of the pulse. Note: It is common to use a 90 % value of thesignal for the upper specified value and a 10 %value for the lower specified value ts storage time

ts Storage timeTsd Soldering temperature, maximum allowable

temperature for soldering with a specified distancefrom the case and its duration

Tstg Storage temperature range, the temperaturerange at which the device may be stored ortransported without any applied voltage

TXD Electrical data input port of a transceiver device

V Volt

V(λ) Standard luminous efficiency function forphotopic vision (relative human eye sensitivity)

V(λ) , V'(λ)Spectral luminous efficiency (of amonochromatic radiation of wavelength λ); V(λ) forphotopic vision; V'(λ) for scotopic vision). Ratio of the radiant flux at wavelength λm to that atwavelength λ such that both radiations produceequally intense luminous sensations underspecified photometric conditions and λm is chosenso that the maximum value of this ratio is equal to 1

VBEO Base emitter voltage, open collectorV(BR) Breakdown voltage, reverse voltage at which a

small increase in voltage results in a sharp rise ofreverse current. It is given in technical data sheetsfor a specified current

V(BR) CEO Collector emitter breakdown voltage,open base

V(BR)EBO Emitter base breakdown voltage, opencollector

V(BR)ECO Emitter collector breakdown voltage, openbase

VCBO Collector-base voltage, open emitter, generally,reverse biasing is carried out by applying a voltageto any of two terminals of a transistor in such a waythat one of the junctions operates in reversedirection, whereas the third terminal (secondjunction) is specified separately.

VCC Supply voltage (positive)VCE Collector emitter voltageVCEO Collector emitter voltage, open base (IB = 0)VCEsat Collector emitter saturation voltage, the

saturation voltage is the DC voltage betweencollector and emitter for specified (saturation)conditions, i.e., IC and EV (Ee or IB), whereas theoperating point is within the saturation region.

Vdd Supply voltage (positive)VEBO Emitter base voltage, open collectorVECO Emitter collector voltage, open baseVF Forward voltage, the voltage across the diode

terminals which results from the flow of current inthe forward direction

VFIR As SIR, data rate 16 Mbit/s

Vlogic Reference voltage for digital data communicationports

Vno Signal-to-noise ratio

VO Output voltageΔVΟ Output voltage change (differential output voltage)VOC Open circuit voltage, the voltage measured

between the photovoltaic cell or photodiodeterminals at a specified irradiance/illuminance(high impedance voltmeter!)

VOH Output voltage highVOL Output voltage lowVph Photovoltage, the voltage generated between the

photovoltaic cell or photodiode terminals due toirradiation/ illumination

VR Reverse voltage (of a junction), applied voltagesuch that the current flows in the reverse direction

VR Reverse (breakdown) voltage, the voltage dropwhich results from the flow of a defined reversecurrent

VS Supply voltageVss (Most negative) supply voltage (in most cases:

ground)± ϕ1/2 Angle of half transmission distanceη Quantum efficiencyθ1/2; ± ϕ = α/2

Half-intensity angle, in a radiation diagram, theangle within which the radiant (or luminous)intensity is greater than or equal to half of themaximum intensity.Note: IEC 60747-5-1 is using θ1/2. In Vishaydatasheets mostly ± ϕ = α/2 is used

θ1/2; ± ϕ = α/2 Half-sensitivity angle, in a sensitivity diagram,the angle within which the sensitivity is greaterthan or equal to half of the maximum sensitivity. Note: IEC 60747-5-1 is using θ1/2. In Vishaydatasheets mostly ± ϕ = α/2 is used



Ω Solid angle, see sr, steradian forIEC 60050(845)-definition. The space enclosed byrays, which emerge from a single point and lead toall the points of a closed curve. If it is assumed thatthe apex of the cone formed in this way is thecenter of a sphere with radius r and that the coneintersects with the surface of the sphere, then thesize of the surface area (A) of the spheresubtending the cone is a measure of the solidangle Ω. Ω = A/r2. The full sphere is equivalent to4πsr. A cone with an angle of α/2 forms a solidangle of Ω = 2 π(1 - cos α/2) = 4 π sin2 α/4, unit: sr

λm Wavelength of the maximum of the spectralluminous efficiency function V(λ)

Δλ Range of spectral bandwidth (50 %), the rangeof wavelengths where the spectral sensitivity orspectral emission remains within 50 % of themaximum value

Φe; Φ; PRadiant flux; radiant power, power emitted,transmitted or received in the form of radiation.unit: W, W = Watt

Φv; Φ; Luminous flux, quantity derived from radiant fluxΦe by evaluating the radiation according to itsaction upon the CIE standard photometric

observer. For photopic vision

,

where is the spectral distribution of the

radiant flux and V(λ) is the spectral luminousefficiency, unit : lm, lm: lumen, Km = 683 lm/W:Note: For the values of Km (photopic vision) andK'm (scotopic vision), see IEC 60050 (845-01-56).

λ Wavelength, generalλc Centroid wavelength, centroid wavelength λc of a

spectral distribution, which is calculated as "centreof gravity wavelength" according to

λD Dominant wavelengthλp Wavelength of peak sensitivity or peak emission

Fig. 1

Φv Km

dΦeλdλ

-------------- V(λ )dλ⋅0∞

∫=

dΦeλdλ

--------------

λc λλ1

λ2

∫ Sx(λ )dλ⋅ Sxλ1

λ2

∫ (λ )dλ⋅⁄=

= 6 5.5°

= 2 0.5°

= 6.5°

= 1.0 sr

= 0.1 sr= 0 .01 sr

= 4 π sr

= 2 ar c c os (1 -/2π)

94 8584

Ω

α

Ω

ΩΩ

α

α

α



DEFINITIONS

Databook Nomenclature

The nomenclature, symbols, abbreviations and terms insidethe Vishay Semiconductors data book is based on ISO andIEC standards.

The special optoelectronic terms and definitions are referringto the IEC Multilingual Dictionary (Electricity, Electronics andTelecommunications), Fourth edition (2001-01), IEC 50(Now: IEC 60050). The references are taken from the currenteditions of IEC 60050 (845), IEC 60747-5-1 andIEC 60747-5-2. Measurement conditions are based on IECand other international standards and especially guided byIEC 60747-5-3.Editorial notes: Due to typographical limitations variablescannot be printed in an italics format, which is usuallymandatory. Our booklet in general is using Americanspelling. International standards are written in UK English.Definitions are copied without changes from the original text.Therefore these may contain British spelling.

Radiant and Luminous Quantities and Their UnitsThese two kinds of quantities have the same basic symbols,identified respectively, where necessary, by the subscripte (energy) or v (visual), e.g. Φe, Φv. See note.Note: Photopic and scotopic quantities. Luminous(photometric) quantities are of two kinds, those used forphotopic vision and those used for scotopic vision. Thewording of the definitions in the two cases being almostidentical, a single definition is generally sufficient with theappropriate adjective, photopic or scotopic added wherenecessary.The symbols for scotopic quantities are prime (Φ'v, I'v, etc),but the units are the same in both cases.In general, optical radiation is measured in radiometric units.Luminous (photometric) units are used when opticalradiation is weighted by the sensitivity of the human eye,correctly spoken, by the CIE standard photometric observer

(Ideal observer having a relative spectral responsivity curvethat conforms to the V(λ) function for photopic vision or to the V'(λ) function for scotopic vision, and that complies with thesummation law implied in the definition of luminous flux).Note: With a given spectral distribution of a radiometricquantity the equivalent photometric quantity can beevaluated. However, from photometric units without knowingthe radiometric spectral distribution in general one cannotrecover the radiometric quantities.

Radiometric Terms, Quantities and UnitsThe radiometric terms are used to describe the quantities ofoptical radiation.The relevant radiometric units are:

Photometric Terms, Quantities and UnitsThe photometric terms are used to describe the quantities ofoptical radiation in the wavelength range of visible radiation(generally assumed as the range from 380 nm to 780 nm).The relevant photometric terms are:

Photometric units are derived from the radiometric units byweighting them with a wavelength dependent standardizedhuman eye sensitivity V(λ) - function, the so-calledCIE-standard photometric observer. There are differentfunctions for photopic vision (V(λ)) and scotopic vision (V'(λ) ).

In the following is shown, how the luminous flux is derivedfrom the radiant power and its spectral distribution. Theequivalent other photometric terms can be derived from theradiometric terms in the same way.

TABLE 1 - RADIOMETRIC QUANTITIES AND UNITS

RADIOMETRIC TERM

SYMBOL UNIT REFERENCE

Radiant power,radiant flux Φe W IEC 50

(845-01-24)

Radiant intensity Ie W/sr IEC 50 (845-01-30)

Irradiance Ee W/m2 IEC 50 (845-01-37)

Radiant exitance Me W/m2 IEC 50 (845-01-47)

Radiance Le W/(sr ⋅ m2) IEC 50 (845-01-34)

TABLE 2 - PHOTOMETRIC QUANTITIES AND UNITS

PHOTOMETRIC TERMEQUIVALENT

RADIOMETRIC TERMSYMBOL UNIT REFERENCE

Luminous power or

luminous flux

Radiant power or

radiant flux Φe

Φv lmΦv: IEC 50 (845-01-25)

lm: IEC 50 (845-01-51)

Luminous intensity Radiant intensity Ie Iv lm/sr = cd Iv: IEC 50 (845-01-31) cd: IEC 50 (845-01-50)

Illuminance Irradiance Ee Ev lm/m2 = lx (lux) Ev: IEC 50 (845-01-38) lx: IEC 50 (845-01-52)

Luminous exitance Radiant exitance Me Mv lm/m2 IEC 50 (845-01-48)

Luminance Radiance Le Lv cd/m2 IEC 50 (845-01-35)



Relation between distance r, irradiance (illuminance) Ee(EV) and intensity Ie (IV)The relation between intensity of a source and the resultingirradiance in the distance r is given by the basic square rootrule law.An emitted intensity Ie generates in a distance r theirradiance Ee = Ie/r2.This relationship is not valid under near field conditions andshould be used not below a distance d smaller than 5 timesthe emitter source diameter.

Fig. 2

Using a single radiation point source, one gets the followingrelation between the parameter Ee, Φe, r:

use

, and get

Examples

1.Calculate the irradiance with given intensity and distance r:Transceivers with specified intensity of Ie = 100 mW/sr willgenerate in a distance of 1m an irradiance ofEe = 100/12 = 100 mW/m2. In a distance of 10 m theirradiance would be Ee = 100/102 = 1 mW/m2.

2.Calculate the range of a system with given intensity andirradiance threshold. When the receiver is specified with asensitivity threshold irradiance Ee = 20 mW/m2, thetransmitter with an intensity Ie = 120 mW/sr the resultingrange can be calculated as

1 m

2 m

3 m 18145

9 m2

4 m2

1 m2

Ee

dΦe

dA----------- W

m2-------=

IedΦdΩ--------= Ω A

r2----=

Ee

dΦe

dA----------- Ie

dΩdA--------

Ie

r2---- W

m2-------= = =

rIeEe------ 120

20---------- 6 2.45 m= = = =

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Emitters, Detectors, Sensors

I n f r a re d E m i t t e r s

P I N P h o t o D i o d e s

P h o t o t r a n s i s t o r s

R e f l e c t i v e S e n s o r s

Tr a n s m i s s i v e S e n s o r s

A m b i e n t L i g h t S e n s o r s

I n t e g r a t e d P ro x i m i t y a n d A m b i e n t L i g h t S e n s o r

RESOURCES• Optical sensors product portfolio http://www.vishay.com/optical-sensors/

• Infrared emitters product portfolio http://www.vishay.com/ir-emitting-diodes/

• Photo detectors product portfolio http://www.vishay.com/photo-detectors/

• Optoelecronics complete product portfolio http://www.vishay.com/optoelectronics/

• Technical support:

– [email protected]



• Sales contacts: http://www.vishay.com/doc?99914

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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V I S H AY I N T E R T E C H N O LO GY, I N C .

VMN-SG2123-12031/8SELECTOR GUIDE

Discrete Semiconductors and Passive ComponentsOne of the World’s Largest Manufacturers of

Infrared Emitters, PhotoDetectors, and Optical Sensors

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Infrared EmittersVishay offers emitters in more wavelengths than any other supplier: 830 nm, 850 nm, 870 nm, 890 nm, 940 nm, and 950 nm. Providing fast rise and fall response times, Vishay also has the broadest selection of double hetero infrared emitters. They are the highest-power infrared emitters with the lowest forward voltages on the market and ideal for high-current applications. The latest surface emitter technology based devices, which provide highest radiant intensities, round up our extensive IR emitter portfolio.

1.65

2.8

3.0

PLCC-2

5.0

5.0

2.65

Side View Lens

2.4

2.9

3.3

1.8 mm

2.2

3.6

3.4

Side View Micro

6.13.0

3 mm

5.2 - 6.54.69

TO-18

5.0

8.65 mm

1.8 mm Surface-Mount

5.8

2.2

2.77

Package Part NumberPeak

Wavelength (nm)

Angle of Half Intensity

(+/-°)

Radiant Intensity,

Ie (mW/sr) (1)

Rise and Fall Time, tr/tfn (ns)

Remark

Through-Hole Packages

5 mm

TSAL5100 940 10 130 800 Stand-off

TSAL5300 940 22 45 800 Stand-off

TSAL6100 940 10 130 800 No stand-off

TSAL6200 940 17 60 800 No stand-off






TSFF5210 870 10 180 15 Stand-off

TSFF5410 870 22 70 15 Stand-off

TSFF5510 870 38 32 15 Stand-off

TSFF6210 870 10 180 15 No stand-off

TSFF6410 870 22 70 15 No stand-off

TSHA5203 875 12 65 600 Stand-off

TSHA5500 875 24 30 600 Stand-off

TSHA6203 875 12 65 600 No stand-off


TSHF5210 890 10 180 30 Stand-off

TSHF5410 890 22 70 30 Stand-off

TSHF6210 890 10 180 30 No stand-off


TSHG5210 850 10 230 20 Stand-off

TSHG5410 850 18 90 20 Stand-off

TSHG5510 830 38 32 15 Stand-off

TSHG6200 850 10 180 20 No stand-off






TSUS5202 950 15 30 800 Stand-off

TSUS5402 950 22 20 800 Stand-off

VSLY5850 850 3 600 10 Stand-off

3 mm



TSUS3400 950 18 15 800 Stand-off


TSUS4300 950 16 18 800 No stand-off

TSUS4400 950 18 15 800 No stand-off

VSLB3940 940 22 65 15 No stand-off



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2.4

2.9

3.3

1.8 mm

2.2

3.6

3.4

Side View Micro

6.13.0

3 mm

0805

0.85

2.0 1.25

1.65

2.8

3.0

PLCC-2

5.2 - 6.54.69

TO-18

5.0

8.65 mm


5.8

2.2

2.77

0.4 0.2 014329

0.6

0.9

0.8

0°30°

10° 20°

40°

50°

60°

70°

80°0.7

1.0

I- R

elat

ive

Rad

iant

Inte

nsity

ere

l ϕ -

Angu

lar D

ispl

acem

ent

Package Part NumberPeak

Wavelength (nm)

Angle of Half Intensity

(+/-°)

Radiant Intensity,

Ie (mW/sr) (1)

Rise and Fall Time, tr/tfn (ns)

Remark


1.8 mmCQY36N 950 55 1.50 800 No stand-off

CQY37N 950 12 5 800 No stand-off

Side View Micro

TSSS2600 950 25H, 65V 2.6 800 No stand-off

Side View Lens

TSKS5400S 950 30 4.5 800 No stand-off

TO-18

TSTA7100 875 5 50 600 No stand-off



TSTS7100 950 5 18 800 No stand-off

TSTS7300 950 12 6 800 No stand-off

TSTS7500 950 30 1.6 800 No stand-off

Surface-Mount Packages

PLCC-2

VSMB3940X01(2) 940 60 13 15

VSMF3710 890 60 10 30

VSMF4710 870 60 10 15

VSMF4720 870 60 16 15

VSMG2700 830 60 10 20

VSMG2720 830 60 14 20

VSMG3700 850 60 10 20

VSML3710 940 60 6 800

VSMS3700 950 60 4.5 800

VSMY3850 850 60 17 10

1.8 mm

VSMB2000X01(2) 940 12 40 15 Reverse gullwing

VSMB2020X01(2) 940 12 40 15 Gullwing

VSMY2850RG 850 10 100 10 Reverse gullwing

VSMY2850G 850 10 100 10 Gullwing

0805VSMB1940X01(2) 940 60 6 15

VSMY1850 850 60 12 10

Little Star®VSMY7850X01(3) 850 60 170 (3) 18

VSMY7852X01(4) 850 60 42 (4) 10

(1) If = 100 mA (2) Products ending in “X01” are AEC Q101 qualified (3) If = 1 A (4) If = 250 mA

Stand-OffTo control the height of the emitter when inserted into the PCB for soldering, some leaded emitters and photo detectors are also available with a standoff option (shown at left). The stand off is the tab on the leads. It is sometimes called a stopper.

Angle of Half Intensity, j0.5 or qIn a radiation diagram, the angle within which the radiant intensity is greater than or equal to half of the maximum intensity. In Vishay datasheets, the symbol j0.5 is most commonly used for the angle of half intensity. For visible LEDs this is sometime called the viewing angle. There is still light, be it infrared or visible, outside of this angle.

5.0

5.0

2.65

Side View Lens



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Package Part Number

Pea

k W

ave

leng

th (n

m)

Ban

dw

idth

l 0.5

(nm

)

Sen

siti

vity

I ra (

µA)(1

)

Ang

le

of

Hal

f S

ensi

tivi

ty

(+/-

°)

Pho

to

Are

a (m

m)

Ris

e/Fa

ll T

ime,

t r/

t f (n

s)(2

)

Remark


3mmTEFD4300 950 350 to 1120 17 20 0.23 100

TEFD4300F 950 770 to 1070 17 20 0.23 100

5 mmBPV10 920 380 to 1140(7) 70 20 0.78 2,5(3) Stand-off

BPV10NF 940 790 to 1050 60 20 0.78 2,5(3) Stand-off

Side View

BPW41N 950 870 to 1050 45 65 7.5 100 5 x 4 x 6,8

BPW46 (L) 900 430 to 1100(7) 50 65 7.5 100 5 x 3 x 6,4

BPW82 950 790 to 1050 45 65 7.5 100 5 x 4 x 6,8

BPW83 950 790 to 1050 45 65 7.5 100 5 x 3 x 6,4

Side View High

Perfor- mance

BPV22F 950 870 to 1050 80 60 7.5 100

BPV22NF 940 790 to 1050 85 60 7.5 100

BPV23F 950 870 to 1050 63 60 4.4 70

BPV23NF 940 790 to 1050 65 60 4.4 70

TO-5 BPW20RF 920 400 to 1100(7) 42 50 7.5 3600(6)

TO-18 BPW24R 900 430 to 1100(7) 60 12 0.78 7(4)(5)

Top View Leaded

BP104 950 870 to 1050 45 65 7.5 100

BPW34 900 430 to 1100(7) 55 65 7.5 100


Top View

TEMD5080X01(8) 940 350 to 1100(7) 60 65 7.5 40(4) AEC-Q101

TEMD5020X01(8) 940 430 to 1100(7) 35 65 4.4 100 AEC-Q101

TEMD5120X01(8) 940 790 to 1050 35 65 4.4 100 AEC-Q101

TEMD5010X01(8) 940 430 to 1100(7) 55 65 7.5 100 AEC-Q101

TEMD5110X01(8) 940 790 to 1050 55 65 7.5 100 AEC-Q101

VBP104S 940 430 to 1100(7) 35 65 4.4 100 Gullwing

VBP104SR 940 430 to 1100(7) 35 65 4.4 100 Reverse gullwing

VBP104FAS 950 780 to 1050 35 65 4.4 100 Gullwing

VBP104FASR 950 780 to 1050 35 65 4.4 100 Reverse gullwing

VBPW34S 940 430 to 1100(7) 55 65 7.5 100 Gullwing

VBPW34SR 940 430 to 1100(7) 55 65 7.5 100 Reverse gullwing

VBPW34FAS 950 780 to 1050 55 65 7.5 100 Gullwing

VBPW34FASR 950 780 to 1050 55 65 7.5 100 Reverse gullwing

1.8 mm

VEMD2000X01 940 750 to 1050 12 15 0.23 100 Reverse gullwing

VEMD2020X01(8) 940 750 to 1050 12 15 0.23 100 Gullwing

VEMD2500X01(8) 900 350 to 1120(7) 12 15 0.23 100 Reverse gullwing

VEMD2520X01(8) 900 350 to 1120(7) 12 15 0.23 100 Gullwing

0805TEMD7000X01(8) 900 350 to 1120(7) 3 60 0.23 100

TEMD7100X01(8) 950 750 to 1050 3 60 0.23 100

Notes: (1) Sensitivity: VR = 5 V, Ee = 1 mW/cm2, l = 950 nm; (2) Speed: RL = 1 kΩ, l = 820 nm, VR = 10 V, (3) VR = 50 V, RL = 50 Ω, l = 820 nm; (4) RL = 50 Ω; (5) VR = 20 V; (6) VR = 0V (7) Bandwidth l0.1 (nm) (8) Products ending in “X01” are AEC-Q101 qualified

PIN Photo DiodesVishay has the broadest portfolio of PIN photodiodes on the market. With lower capacitance, they provide high-speed response, low noise and low dark current along with excellent sensitivity. They are ideal for high-speed data transfer, light barriers, alarm systems, and linear light measurement.

Rise and Fall Time: Switching times of photo detectors are strongly dependent on the measurement conditions. Shown in the diagrams are two major conditions: the reverse bias and the value of the load resistor used in the circuit. The switching time of a photo diode varies by two orders of magnitude when the load resistor value changes from 50 Ω to 10 kΩ. The lower the value of the load resistor, the faster the diode becomes. Also, the higher the reverse bias, the faster the switching times.

5.2 - 6.54.69

TO-18

5.0

8.65 mm

8.13 3.1

TO-5

5.8

2.2

2.77

8.6


4.5

6.0

3.2

Side View,

High Performance

5.0

6.4

3.0

Side View

4.65

4.3

2.0

Top View,

Through

Hole

0805

0.85

2.0 1.25

4.0 5.0

1.1

Top View, Surface-Mount

0

2

4

6

8

12

Rev

erse

Bia

s (V

)

94 8616

10

104 106105 108107

RL =

50 Ω

100 kΩ

10 kΩ

1 kΩ

- 3 dB - Bandwidth (Hz)



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PackagePart

Number

Peak Wave- length (nm)

Bandwidth l0.5

(nm)

Collector Light

Current, Ica (mA)(1)

Angle of Half

Sensitvity (+/-° )

Rise and Fall

Time, tr/tf (µs)(2)

Remark


5 mm

BPV11 850 450 to 1080(3) 10 15 6 With base pin

BPV11F 930 900 to 980 9 15 6 With base pin

BPW96C 850 450 to 1080(3) 8 20 2 Stand-off

3 mmBPW85C 850 450 to 1080(3) 5 25 2 Stand-off

TEFT4300 925 875 to 1000 3.2 30 2 No stand-off

1.8 mmBPW16N 825 450 to 1040(3) 0.14 40 4.8

BPW17N 825 450 to 1040(3) 1 12 4.8

Side View Micro TEST2600 920 850 to 980 2.5 30H, 60V 6

Side View Lens TEKT5400S 920 850 to 980 4 37 6

TO-18BPW76B 850 450 to 1080(3) 1.2 40 6

BPW77NB 850 450 to 1080(3) 20 10 6


PLCC-2

VEMT3700 850 450 to 1080(3) 0.5 60 2

VEMT3700F 940 850 to 1050 0.5 60 2

VEMT4700 850 450 to 1080(3) 0.5 60 2 With base pin

1.8 mm

VEMT2000X01(4) 860 790 to 970 6 15 2 Reverse gullwing

VEMT2020X01(4) 860 790 to 970 6 15 2 Gullwing

VEMT2500X01(4) 850 470 to 1090(3) 6 15 2 Reverse gullwing

VEMT2520X01(4) 850 470 to 1090(3) 6 15 2 Gullwing

0805TEMT7000X01(4) 850 470 to 1090(3) 0.45 60 2

TEMT7100X01(4) 870 750 to 1010 0.45 60 2

Notes: (1) Collector light current: VCE = 5 V, Ee = 1 mW/cm2, l = 950 nm, typical (2) Speed: VS = 5 V, IC = 5 mA, RL = 100 Ω (3) Bandwidth l0.1 (nm) (4) Products ending in “X01” are AEC-Q101 qualified

Bandwidth: l0.5 and l0.1

The diagram to the left shows the relative spectral sensitivity of the BPV11 phototransistor. The peak sensitivity is found at 850 nm. The bandwidth of the detector can be defined by using a relative sensitivity value of 0.5 or 0.1. Vishay datasheets will show one of these values. In the case of the BPV11, the bandwidth in the datasheet is 450 nm to 1080 nm, l0.1.

400 600 10000

0.2

0.4

0.6

0.8

1.0

S (λ)

rel -

Rel

ativ

e S

pect

ral S

ensi

tivity

λ - Wavelength (nm)94 8348

800

PhototransistorsVishay provides the industry’s widest selection of phototransistors. Offered in over 10 different packages, Vishay’s phototransistors are exceptionally sensitive and simplify circuit design by eliminating the need for a separate amplifier.

5.0

5.0

2.65

Side View Lens

2.4

2.9

3.3

1.8 mm

2.2

3.6

3.4

Side View Micro

6.13.0

3 mm

0805

0.85

2.0 1.25

5.0

8.65 mm

5.8

2.2

2.77

8.6


1.65

2.8

3.0

PLCC-2

5.2 - 6.54.69

TO-18



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Reflective SensorsReflective sensors incorporate an infrared emitter and photo detector adjacent to each other. When an object is in the sensing area, the emitted light is reflected back towards the photo detector, and the amount of light energy reaching the detector increases. This change in light energy or photo current is used as an input signal in the application.

Transmissive Sensors Transmissive sensors, also called interrupter sensors, incorporate an infrared emitter and photo detector that face each other. When an object is located between the emitter and detector in the sensing path, it interrupts or breaks the optical beam of the emitter. A change in light energy reaching the detector results in a change in photo current which is used as an input to the application.

Part Number(1) Operating Range(2) (mm)

Peak Operating Distance (mm)

TCND5000(3) 2 to 25 7

TCNT2000* 1 to 5 1

TCRT1000/1010 1 to 2 1

TCRT5000(L) 1 to 14 2.5

CNY70 1 to 3 0

5.5

4.0

4.03.0

TCPT1300X01

2.8

9.2

4.8

5.4

TCST1230

5.5

4.0

4.03.0

TCUT1300X013.0

8.3

4.7

8.1

TCST1030, L

10.8

6.3

11.9

3.1

TCST1x0x

9.5

14.3

6.0

2.7

TCST5250

24.56.3

3.110.8

TCST2x0x

Notes: (1) All optical sensors have phototransistor output except where noted. (2) Relative collector current > 20 % (3) TCND5000 has a PIN photodiode output ( * ) Target specification, product release pending

Part Number(1) Gap (mm)

Aperture (mm)

Typical Output Current

(mA)

On / Off Time

ton / toff (µs)

TCPT1300X01(3) 3.0 0.3 0.6 20 / 30

TCUT1300X01(2) (3) 3.0 0.3 0.6 20 / 30

TCST1030 3.0 none 2.4 15 / 10

TCST1103 3.1 1 4 10 / 8

TCST1202 3.1 0.5 2 10 / 8

TCST1230 3 0.5 2.0 15 / 10

TCST1300 3.1 0.3 0.5 10 / 8

TCST2103 3.1 1.0 4.0 10 / 8

TCST2202 3.1 0.5 2.0 10 / 8

TCST2300 3.1 0.3 0.5 10 / 8

TCST5250 2.7 0.5 1.5 15 / 10

Notes: (1) All optical sensors have phototransistor output (2) Dual channel (3) Products ending in “X01” are AEC-Q101 qualified.

6.03.7

3.9

TCND5000

10.2

7.0

5.8

TCRT5000(L)

2.5

7.0

4.0

TCRT1010

7.0

7.0

6.0

CNY70

TCNT2000 TCRT1000

2.5

7.0

4.0

2.77 2.7



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TEMD5510FX01 TEMT6200FX01

TEMD6200FX01

TEMD6010FX01

TEMT6000X01TEPT5600 TEPT4400 TEPT5700 BPW21R

Ambient Light SensorsAmbient light sensors are used to detect light or brightness in a manner similar to the human eye. They are most commonly found in industrial lighting, consumer electronics, and automotive systems, where they allow settings to be adjusted automatically in response to changing ambient light conditions. By turning on, turning off, or adjusting features, ambient light sensors can conserve battery power or provide extra safety while eliminating the need for manual adjustments.

Package Part Number

Peak Wave- length (nm)

Band- width l0.5

(nm)

Angle of Half

Sensitvity (+/-° )

Light Current(1)

Incandescent (µA)

Light Current(2)

Fluorescent (μA)

Remark

Photo Diodes

0805, SMD TEMD6200FX01(3) 540 430 to 610 60 0.04 0.03 Stand-off

1206, SMD TEMD6010FX01(3) 540 430 to 610 60 0.04 0.03

Top View SMD TEMD5510FX01(3) 540 430 to 610 65 1 0.7

TO-5, Leaded BPW21R 565 420 to 675 50 0.9 0.75

Phototransistors

0805, SMD TEMT6200FX01(3) 550 450 to 610 60 12 7

1206, SMD TEMT6000X01(3) 570 430 to 800 60 50 21

5 mm, flat top TEPT5700 570 430 to 800 50 75 31 Leaded

5 mm TEPT5600 570 430 to 800 20 350 145 Leaded

3 mm TEPT4400 570 430 to 800 30 200 83 Leaded

Notes: (1) Ev = 100 lux, VCE = 5 V, CIE illuminant A, typical (2) Ev = 100 lux, VCE = 5 V, e.g. Sylvania color abbrev. D830, typical (3) Products ending in “X01” are AEC-Q101 qualified

F Part numbers with an F contain an infrared filtering epoxy to further improve the ambient light sensing performance X01 Part numbers with an X01 are qualified to the AEC Q101 standard

and support operating temperatures from - 40 C° to + 100 °C



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Package Part Number

Operating Range (mm)

Operating Voltage

Range (V)

Sample Rate(1) (Hz)

LED Pulse

Current(1) (mA)

Ambient Light

Range (lx)

Ambient Light Reso-

lution (lx)

Interrupt

LLP, SMD 3.95 mm x 3.95 mm

x 0.75 (H) mm

VCNL40001 to 200 2.5V to 3.6V 1 to 500 10 to 200

0.25 to 16383

0.25No

VCNL4010 Yes

Notes: (1) Adjustable through I2C interface

Integrated Proximity and Ambient Light Sensor

VCNL4000

VCNL4010

The VCNL4000 and VCNL4020 are fully integrated proximity and ambient light sensors combining an infrared emitter, PIN photodiode, ambient light sensor and signal processing IC into a single package. They feature I2C interface and have the highest proximity resolution on the market. The VCNL4010 supports an interrupt function.

• Integrated emitter eliminates need for mechanical, cross-talk barriers - simplifies Window design

• Lowprofileof0.75mm-idealforsmartphoneanddigitalcameraapplications

• Proximitydistanceupto20cm

• I2C fast mode interface

• 16-bitdigitalresolutionforambientlightandproximitysignal

• Interruptfunction-VCNL4010

The VCNL4000 and VCNL4020 are fully integrated proximity and ambient light sensors combining an infrared emitter, PIN photodiode, ambient light sensor and signal processing IC into a single package. They feature I2C interface and have the highest proximity resolution on the market. The VCNL4010 supports an interrupt function.



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Assembly Instructions

Assembly InstructionsVishay Semiconductors


GENERALOptoelectronic semiconductor devices can be mounted inany position. Connection wires may be bent provided thebend is not less than 1.5 mm from bottom of case. Duringbending, no forces must be transmitted from pins to case(e.g., by spreading the pins).If the device is to be mounted near heat generatingcomponents, the resultant increase in ambient temperatureshould be taken into account.

SOLDERING INSTRUCTIONSProtection against overheating is essential when a device isbeing soldered. It is recommended, therefore, that theconnection wires be left in place as long as possible. Themaximum permissible device junction temperature should beexceeded for as little time as possible, and for no longer thanspecified in the solder profiles, during the soldering process.In case of plastic encapsulated devices, the maximumpermissible soldering temperature is governed by themaximum permissible heat that may be applied toencapsulants rather than by the maximum permissiblejunction temperature.Maximum soldering iron (or solder bath) temperatures aregiven in table 1. During soldering, no forces must betransmitted from pins to case (e.g., by spreading pins).

SOLDERING METHODSThere are several methods in use to solder devices onto thesubstrate. Some of them are listed in the following sections.

Vapor Phase Soldering

Soldering in saturated vapor is also known as condensationsoldering. This soldering process is used as a batch system(dual vapor system) or as a continuous single vapor system.Both systems may also include preheating of the assembliesto prevent high-temperature shock and other undesiredeffects.

Infrared soldering

With infrared (IR) reflow soldering the heating is contact-freeand the energy for heating the assembly is derived fromdirect infrared radiation and from convection (Refer toCECC00802).The heating rate in an IR furnace depends on the absorptioncoefficients of the material surfaces and on the ratio ofcomponent’s mass to its irradiated surface.The temperature of components in an IR furnace, with amixture of radiation and convection, cannot be determined inadvance. Temperature measurement may be performed bymeasuring the temperature of a certain component while it isbeing transported through furnace.The temperatures of small components, soldered togetherwith larger ones, may rise up to 280 °C.The following parameters influence the internal temperatureof a component:

- Time and power

- Mass of component

- Size of component

- Size of printed circuit board

- Absorption coefficient of surfaces

- Packaging density

- Wavelength spectrum of radiation source

- Ratio of radiated and convected energy

Temperature-time profiles of the entire process and theabove parameters are given in figures 1 and 2.

TABLE 1- MAXIMUM SOLDERING TEMPERATURESIRON SOLDERING WAVE SOLDERING

IRON TEMPERATURE

DISTANCE OF THE

SOLDERING POSITION FROM THE

LOWER EDGE OF THE CASE

MAXIMUM ALLOWABLE SOLDERING

TIME

SOLDERING TEMPERATURE

SEE TEMPERATURE TIME PROFILES

DISTANCE OF THE

SOLDERING POSITION FROM THE

LOWER EDGE OF THE CASE

MAXIMUM ALLOWABLE SOLDERING

TIME

Devices in metal case

≤ 245 °C ≥ 1.5 mm 5 s 245 °C ≥ 1.5 mm 5 s

≤ 245 °C ≥ 5.0 mm 10 s

≤ 350 °C ≥ 5.0 mm 5 s 300 °C ≥ 5.0 mm 3 s

Devices in plastic case > 3 mm

≤ 260 °C ≥ 2.0 mm 5 s 235 °C ≥ 2.0 mm 8 s

≤ 300 °C ≥ 5.0 mm 3 s 260 °C ≥ 2.0 mm 5 s

Devices in plastic case ≤ 3 mm ≤ 300 °C ≥ 5.0 mm 3 s 260 °C ≥ 2.0 mm 3 s

Assembly InstructionsAssembly Instructions Vishay Semiconductors


Wave soldering

In wave soldering, one or more continuously replenishedwaves of molten solder are generated, while the substratesto be soldered are moved in one direction across the wave’screst.Temperature-time profiles of the entire process are given infigure 3.

Iron soldering

This process cannot be carried out in a controlled way.It should not be considered for use in applications wherereliability is important. There is no SMD classification for thisprocess.

Laser soldering

This is an excess heating soldering method. The energyabsorbed may heat device to a much higher temperaturethan desired. There is no SMD classification for this processat the moment.

Resistance soldering

This is a soldering method which uses temperaturecontrolled tools (thermodes) for making solder joints. Thereis no SMD classification for this process at the moment.

WARNINGSurface-mount devices are sensitive to moisture release ifthey are subjected to infrared reflow or a similar solderingprocess (e.g. wave soldering). After opening the bag, theymust be:

1.stored at ambient of < 20 % relative humidity (RH)

2.mounted within floor life specified on MSL sticker underfactory conditions of Tamb < 30 °C/RH < 60 %

Devices require baking before mounting if 1. or 2. is not metand the humidity indicator card is > 20 % at 23 ± 5 °C. Ifbaking is required, devices may be baked for 192 h at 40 °C+ 5 °C - 0 °C and < 5 % RH.

TEMPERATURE-TIME PROFILES

Fig. 1 - Lead (Pb)-free (Sn) Infrared Reflow Solder Profileacc. J-STD020D for Surface-Mount Components

Fig. 2 - Infrared Reflow SnPb Solder Profile for Surface-Mount Components like TEMx1xxx and TSMx1xxx

Fig. 3 - Double Wave Solder Profile for Leaded Components

0

50

100

150

200

250

300

0 50 100 150 200 250 300

Time (s)

Tem

pera

ture

(°C

)

240 °C 245 °C

max. 260 °C

max. 120 s max. 100 s

217 °C

max. 30 s

max. ramp up 3 °C/s max. ramp down 6 °C/s

19841

255 °C

60

80

100

120

140

160

180

200

220

240

260

0 20 40 60 80 100 120 140 160 180 200 220

Time (s)

Tem

pera

ture

(°C

)

17172

+ 5 °C/s

5 s60 s to 120 s

- 5 °C/s

2 K/s

secondwave

first wavewave

ca. 5 K/s

5 s

full line: typicaldotted line:process limits

Time (s)

Tem

pera

ture

(°C

)

300

250

200

150

100

50

00 50 100 150 200 250

948626

Lead temperature

235 °C to 260 °C

100 °C to 130 °C

ca. 200 K/s

forced cooling

ca. 2 K/s


Assembly InstructionsVishay Semiconductors Assembly Instructions

HEAT REMOVALTo maintain thermal equilibrium, the heat generated in thesemiconductor junction(s) must be removed to keep thejunction temperature below specified maximum.In case of low-power devices, the natural heat conductivepath between the case and surrounding air is usuallyadequate for this purpose. The heat generated in the junctionis conveyed to the case or the header by conduction ratherthan convection. A measure of the effectiveness of heatconduction is the inner thermal resistance or thejunction-to-case thermal resistance, RthJC, which is governedby the device construction.Any heat transfer from the case to the surrounding airinvolves radiation convection and conduction, theeffectiveness of transfer being expressed in terms of an RthCAvalue, i.e., external or case ambient thermal resistance. Thetotal junction-to-ambient thermal resistance is consequently:

RthJA = RthJC + RthCA

The total maximum power dissipation, Ptotmax. of asemiconductor device can be expressed as follows:

where:

Tjmax. the maximum allowable junction temperature

Tamb the highest ambient temperature likely to bereached under the most unfavorable conditions

RthJC junction-to-case thermal resistance

RthJA the junction-to-ambient thermal resistance, isspecified for the components. The following diagramshows how the different installation conditions effectthe thermal resistance

RthCA the case-to-ambient thermal resistance, RthCA,depends on cooling conditions. If a heat dissipator orsink is used, RthCA depends on the thermal contactbetween the case and heat sink, upon the heatpropagation conditions in the sink, and upon the rateat which heat is transferred to the surrounding air

Fig. 4 - Junction-to-Ambient Thermal Resistance vs.

Lead Length at Different Assembly

Fig. 5 - In Case of Wire Contacts (Curve B, Figure 4)

Fig. 6 - In Case of Assembly on PC Board, no Heatsink(Curve C, Figure 4)

Fig. 7 - In Case of Assembly on PC Board, with Heatsink(Curve A, Figure 4)

Ptotmax.

Tjmax.Tamb–

RthJA--------------------------------------------------------

Tjmax.

Tamb–

RthJC RthCA+-----------------------------------------------------------= =

a

b

c

5 1580

90

100

R(%

)th

JA

Length l (mm)

25

94 8161

3

0.14 mm2 Cu isolated

≥100

l

94 8162

l

2.5

2.54

94 8163

Side view

Fromunderneath

2.5

2.54

100 mm2

Cu

Cathode

l

94 8164

Side view

Fromunderneath

Reliability and Statistics Glossary

Reliability and Statistics GlossaryVishay Semiconductors


DEFINITIONSAccelerated Life Test: A life test under conditions that aremore severe than usual operating conditions. It is helpful, butnot necessary, that a relationship between test severity andthe probability distribution of life be ascertainable.

Acceleration Factor: Notation: f(t) = the time transformationfrom more severe test conditions to the usual conditions. Theacceleration factor is f(t)/t. The differential acceleration factoris df(t)/dt.

Acceptance Number: The largest numbers of defects thatcan occur in an acceptance sampling plan and still have thelot accepted.

Acceptance Sampling Plant: An accept/reject test thepurpose of which is to accept or reject a lot of items ormaterial based on random samples from the lot.

Assessment: A critical appraisal including qualitativejudgments about an item, such as importance of analysisresults, design criticality, and failure effect.

Attribute (Inspection by): A term used to designate amethod of measurement whereby units are examined bynoting the presence (or absence) of some characteristic orattribute in each of the units in the group under considerationand by counting how many units do (or do not) possess it.Inspection by attributes can be two kinds: either the unit ofproduct is classified simply as defective or not defective orthe number of defects in the unit of product is counted withrespect to a given requirement or set of requirements.

Attribute Testing: Testing to evaluate whether or not anitem possesses a specified attribute.

Auger Electron Spectrometer: An instrument, thatidentifies elements on the surface of a sample. It excites thearea of interest with an electron beam and observes theresultant emitted Auger electrons.These electrons have the specific characteristics of the nearsurface elements. It is usually used to identify very thin films,often surface contaminants.

Availability (Operational Readiness): The probability thatat any point in time the system is either operatingsatisfactorily or ready to be placed in operation on demandwhen used under stated conditions.

Average Outgoing Quality (AOQ): The average quality ofoutgoing product after 100 % inspection of a rejected lot, withreplacement by good units of all defective units found ininspection.

Bathtub Curve: A plot of the failure rate of an item (whetherrepairable or not) vs. time. The failure rate initially decreases,then stays reasonably constant, then begins to rise ratherrapidly. It has the shape of bathtub. Not all items have thisbehavior.

Bias:

1. The difference between the s-expected value of anestimator and the value of the true parameter

2. Applied voltage.

Burn-in: The initial operation of an item to stabilize itscharacteristics and to minimize infant mortality in the field.

Confidence Interval: The interval within which it is assertedthat the parameters of a probability distribution lie.

Confidence Level: Equals 1 - α

where

α = the risk (%).

Corrective Action: A documented design, process,procedure, or materials change to correct the true cause of afailure. Part replacement with a like item does not constituteappropriate corrective action. Rather, the action shouldmake it impossible for that failure to happen again.

Cumulative Distribution Function (CDF): The probabilitythat the random variable takes on any value less than orequal to a value x, e.g. F (x) = CDF (x) = Pr (x ≤ X).

Defect: A deviation of an item from some ideal state. Theideal state usually is given in a formal specification.

Degradation: A gradual deterioration in performance as afunction of time.

Derating: The intentional reduction of the stress/strengthratio in the application of an item, usually for the purpose ofreducing the occurrence of stress-related failures.

Duty Cycle: A specified operating time of an item, followedby a specified time of no operation.

Early Failure Period: That period of life, after finalassembly, in which failures occur at an initially high ratebecause of the presence of defective parts andworkmanship. This definition applies to the first part of thebathtub curve for failure rate (infant mortality).

EDX Spectrometer: Generally used with a scanningelectron microscope (SEM) to provide elemental analysis ofX-rays generated on the region being hit by the primaryelectron beam.

Effectiveness: The capability of the system or device toperform its function.

EOS - Electrical Overstress: The electrical stressing ofelectronic components beyond specifications. May becaused by ESD.

ESD - Electrostatic Discharge: The transfer of electrostaticcharge between bodies at different electrostatic potentialscaused by direct contact or induced by an electrostatic field.Many electronic components are sensitive to ESD and will bedegraded or fail.

Reliability and Statistics GlossaryReliability and Statistics

GlossaryVishay Semiconductors


Expected Value: A statistical term. If x is a random variableand F (x) it its CDF, the E (x) = xdF (x), where the integrationis over all x. For continuous variables with a pdf, this reducesto E (x) = ∫ x pfd (x) dx. For discrete random variables with apfd, this reduces to E (x) = Σ xnp (xn) where the sum is over all n.

Exponential Distribution: A 1 parameter distribution (λ > 0,t ≤ 0) with: pfd (t) = lexp (-λt); Cdf (t) 0 1 - exp (-λt); Sf (t) = exp (-λt) ; failure rate = λ; mean time-to-failure = 1/λ. This is theconstant failure-rate-distribution.

Failure: The termination of the ability of an item to performits required function.

Failure Analysis: The identification of the failure mode, thefailure mechanism, and the cause (i.e., defective soldering,design weakness, contamination, assembly techniques,etc.). Often includes physical dissection.

Failure, Catastrophic: A sudden change in the operatingcharacteristics of an item resulting in a complete loss ofuseful performance of the item.

Failure, Degradation: A failure that occurs as a result of agradual or partial change in the operating characteristics ofan item.

Failure, Initial: The first failure to occur in use.

Failure, Latent: A malfunction that occurs as a result of aprevious exposure to a condition that did not result in animmediately detectable failure. Example: Latent ESD failure.

Failure Mechanism: The mechanical, chemical, or otherprocess that results in a failure.

Failure Mode: The effect by which a failure is observed.Generally, describes the way the failure occurs and tells"how" with respect to operation.

Failure Rate: (A) The conditional probability density that theitem will fail just after time t, given the item has not failed upto time t; (B) The number of failures of an item per unitmeasure of life (cycles, time, miles, events, etc.) asapplicable for the item.

Failure, Wearout: Any failure for which time of occurrence isgoverned by rapidly increasing failure rate.

FIT: Failure Unit; (also, Failures In Time) Failures per 109 h.

Functional Failure: A failure whereby a device does notperform its intended function when the inputs or controls arecorrect.

Gaussian Distribution: A 2 parameter distribution with:

Cdf (x) = guaf (x). SF (x) = gaufc (x). “Mean value of x” u,“standard deviation of x” = σ

Hazard Rate: Instantaneous failure rate.

Hypothesis, Null: A hypothesis stating that there is nodifference between some characteristics of the parentpopulations of several different samples, i.e., that thesamples came from similar populations.

Infant Mortality: Premature catastrophic failures occurringat a much greater rate than during the period of useful lifeprior to the onset of substantial wear out.

Inspection: The examination and testing of supplies andservices (including when appropriate, raw materials,components, and intermediate assemblies) to determinewhether they conform to specified requirements.

Inspection by Attributes: Inspection whereby either theunit of product or characteristics thereof is classified simplyas defective or not defective or the number of defects in theunit of product is counted with respect to a givenrequirement.

Life Test: A test, usually of several items, made for thepurpose of estimating some characteristic(s) of theprobability distribution of life.

Lot: A group of units from a particular device type submittedeach time for inspection and/or testing is called the lot.

Lot Reject Rate (LRR): The lot reject rate is the percentageof lots rejected form the lots evaluated.

Lot Tolerance Percent Defective (LTPD): The percentdefective, which is to be accepted a minimum or arbitraryfraction of the time, or that percent defective whoseprobability of rejection is designated by b.

Mean: (A) The arithmetic mean, the expected value; (B) Asspecifically modified and defined, e.g., harmonic mean(reciprocals), geometric mean (a product), logarithmic mean(logs).

Mean Life: R(t)dt; where R(t) = the s-reliability of the item;t = the interval over which the mean life is desired, usually theuseful life (longevity).

Mean-Life-Between-Failures: The concept is the same asmean life except that it is for repaired items and is the meanup-time of the item. The formula is the same as for mean lifeexcept that R(t) is interpreted as the distribution of up-times.

Mean-time-between-failures (MTBF): For a particularinterval, the total functioning life of a population of an itemdivided by the total number of failures within the populationduring the measurement interval. The definition holds fortime, cycles, miles, events, or other measure of life units.

Mean-Time-To-Failure (MTTF): See "Mean Life".

Mean-Time-To-Repair (MTTR): The total correctivemaintenance time divided by the total number of correctivemaintenance actions during a given period of time.

MTTR: = G(t)dt; where G(t) = CDF of repair time; T - maximum allowed repair time, i.e., item is treated as norepairable at this echelon and is discarded or sent to a higherechelon for repair.

pfd (x) 1

2πσ------------- e

12--- x u–

σ------------⎝ ⎠

⎛ ⎞ 2

⋅=


Reliability and Statistics GlossaryVishay Semiconductors Reliability and Statistics

Glossary

Operating Characteristic (OC) Curve: A curve showing therelation between the probability of acceptance and either lotquality or process quality, whichever is applicable.

Part Per Million (PPM): PPM is arrived at by multiplying thepercentage defective by 10 000.Example: 0.1 % = 1.000 PPM.

Population: The totality of the set of items, units,measurements, etc., real or conceptual that is underconsideration.

Probability Distribution: A mathematical function withspecific properties, which describes the probability that arandom variable will take on a value or set of values. If therandom variable is continuous and well behaved enough,there will be a pdf. If the random variable is discrete, therewill be a pmf.

Qualification: The entire process by which products areobtained from manufacturers or distributors, examined andtested, and then identified on a Qualified Product List.

Quality: A property, which refers to the tendency of an itemto be made to specific specifications and / or the customer’sexpress needs. See current publications by Juran, Deming,Crosby, et al.

Quality Assurance: A system of activities that providesassurance that the overall quality control job is, in fact, beingdone effectively. The system involves a continuingevaluation of the adequacy and effectiveness of the overallquality control program with a view to having correctivemeasures initiated where necessary. For a specific productor service, this involves verifications, audits, and theevaluation of the quality factors that affect the specification,production inspection, and use of the product or service.

Quality Characteristics: Those properties of an item orprocess, which can be measured, reviewed, or observed andwhich are identified in the drawings, specifications, orcontractual requirements. Reliability becomes a qualitycharacteristic when so defined.

Quality Control (QC): The overall system of activities thatprovides a quality of product or service, which meets theneeds of users; also, the use of such a system.

Random Samples: As commonly used in acceptancesampling theory, the process of selecting sample units insuch a manner that all units under consideration have thesame probability of being selected.

Reliability: The probability that a device will function withoutfailure over a specified time period or amount of usage atstated conditions.

Reliability Growth: Reliability growth is the effort, and theresource commitment, to improve design, purchasing,production, and inspection procedures to improve thereliability of a design.

Risk: α: The probability of rejecting the null hypothesisfalsely.

Scanning Electron Microscope (SEM): An instrumentwhich provides a visual image of the surface features of an

item. It scans an electron beam over the surface of a samplewhile held in a vacuum and collects any of several resultantparticles or energies. The SEM provides depth of field andresolution significantly exceeding light microscopy and maybe used at magnifications exceeding 50 000 times.

Screening Test: A test or combination of tests intended toremove unsatisfactory items or those likely to exhibit earlyfailures.

Significance: Results that show deviations betweenhypothesis and the observations used as a test of thehypothesis, greater than can be explained by randomvariation or chance alone, are called statistically significant.

Significance Level: The probability that, if the hypothesisunder test were true, a sample test statistic would be as badas or worse than the observed test statistic.

SPC: Statistical Process Control.

Storage Life (Shelf Life): The length of time an item can bestored under specified conditions and still meet specifiedrequirements.

Stress: A general and ambiguous term used as an extensionof its meaning in mechanics as that which could causefailure. It does not distinguish between those things whichcause permanent damage (deterioration) and those thingswhich do not (in the absence of failure).

Variance: The average of the squares of the deviations ofindividual measurements from their average. It is a measureof dispersion of a random variable or of data.

Wearout: The process of attribution which results in anincrease of hazard rate with increasing age (cycles, time,miles, events, etc.) as applicable for the item.

ABBREVIATIONSAQL Acceptable quality level

CAR Corrective action report/request

DIP Dual in-line package

ECAP Electronic circuit analysis program

EMC Electro magnetic compatibility

EMI Electro magnetic interference

EOS Electrical overstress

ESD Electrostatic discharge

FAR Failure analysis report/request

FIT (Failure in time) Failure unit; Failures/109 h

FMEA Failure mode and effects analysis

FTA Fault tree analysis

h (t) Hazard rate

LTPD Lot tolerance percent defective

MOS Metal oxide semiconductor

MRB Material review board

MTBF Mean-time-between-failures

MTTF Mean-time-to-failure

Reliability and Statistics GlossaryReliability and Statistics

GlossaryVishay Semiconductors


MTTR Mean-time-to-repair

PPM Parts per million

PRST Probability ratio sequential test

QA Quality assurance

QC Quality control

QPL Qualified products list

RPM Reliability planning and management

SCA Sneak circuit analysis

SEM Scanning electron microscope

TW Wearout time

Z (t) Hazard rate

λ Failure rate (Lambda)


Packaging and Order Information

Packaging and Order InformationVishay Semiconductors

PACKAGING SURVEY

MOISTURE PROOF PACKAGINGThe reel is packed in a moisture proof aluminum bag toprotect devices from absorbing moisture duringtransportation and storage.

Fig. 1 - Moisture Proof Packaging

RECOMMENDED METHOD OF STORAGEDry box storage is recommended as soon as the dry bag hasbeen opened to prevent moisture absorption.The following conditions should be observed if dry boxes arenot available:

• Storage temperature 10 °C to 30 °C

• Storage humidity ≤ 60 % RH max.

After storage longer than the specified floor life (see table 2),moisture content will be too high for reflow soldering. In caseof moisture absorption, the devices will recover to their formercondition by drying using conditions according to theindividual moisture sensitivity level (MSL) specified on asticker affixed to the dry bags (e.g. figure 2, MSL 2a).

Fig. 2 - Example of MSL Sticker

TABLE 1 - PACKAGING OPTIONS OF DETECTOR AND EMITTER DEVICES

PACKAGEFORM

SERIESPACKAGING OPTION

BULK TAPEBLISTER

TAPETUBE

Metal can BPW./TS. X

Side view lens

TEKS5400. X

TEKS5400STEKT5400STSKS5400S

X X

TSKS542.X01 X

SMDTEM./TSM./VEM./VSM.

X

Top view mold

BP104BPW34

X

BP104S BPW34S X

Other leaded

packagesBP./TE./TS. X X

Reel

Aluminum bag

Moisture levelsticker

0

Bar code label

ESD sticker

18298

Box

TABLE 2 - MOISTURE SENSITIVITY LEVEL, FLOOR LIFE AND FLOOR CONDITIONS

MSL FLOOR LIFE CONDITIONS

1 No limit ≤ 30 °C/90 % RH

2 1 year

≤ 30 °C/60 % RH

2a 672 h

3 168 h

4 72 h

5 24h/48 h

6 6 h

L E V E L

CAUTION This bag contains MOISTURE –SENSITIVE DEVICES

1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260°C) must be:

a) Mounted within 672 hours at factory condition of < 30°C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if:

a) Humidity Indicator Card is >10% when read at 23°C + 5°C or b) 2a or 2b is not met.

4. If baking is required, devices may be baked for:

192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen) or 96 hours at 60±5oCand <5%RH For all device containers or 24 hours at 100±5°C Not suitable for reels or tubes Bag Seal Date: ______________________________ (If blank, see bar code label)

Note: LEVEL defined by EIA JEDEC Standard JESD22-A113

2a

19786


Packaging and Order InformationVishay Semiconductors Packaging and Order

Information

ESD PRECAUTIONProper storage and handling procedures should be followedto prevent ESD damage to the devices, especially when theyare removed from the antistatic shielding bag.

BAR CODE LABELSVishay Semiconductor standard bar code labels are printedon the final package. Labels containing VishaySemiconductor specific data are affixed to each packageunit.

Fig. 3 - Bar code design and information

A) PDF417 bardoce including 325 char

B) Plant code according TQD9021http://intra.hn.vishay.com/quality/docs/tqd/tqd_9021.htm

C) Lot1 and Lot2 reflects the lot numbers. Lot2 is acombination of 19 (PTC), 0745 (YYWW), 1 (productionday MO=1, TU=2), A (Shift A,B,C) and 01 as productionequipment

D) Batch contains the datecode 200745 (YYYYWW), origin(PH=Philippines), 19 (PTC)

E) Unique label serial number: VO production location (ISO),01=label station ID, 00001158 (serial number)

F) Check digit: counting number starting at A00 up to Z99 togive e.g. a manufactured reel a serial number (track andtrace information)

TAPING OF SMDVishay SMD IR emitters and detectors are packed inantistatic blister tapes (in accordance with DIN IEC 40 (CO)564) for automatic component insertion. The blister tapes areplastic strips with impressed component cavities, which arecovered by a glued top tape.

Missing Devices

A maximum of 0.5 % of the total number of components perreel may be missing, excluding missing components at thebeginning and at the end of reel. A maximum of threeconsecutive components may be missing. This gap isfollowed by ≥ 6 consecutive components (minimum).

Fig. 4 - Beginning and End of Reel

21379A B C D E F

De-reeling direction

Tape leader

min. 75 emptycompartments

> 160 mm

40 emptycompartments

Carrier leader Carrier trailer

94 8158

Packaging and Order InformationPackaging and Order

InformationVishay Semiconductors


TAPING SMD PLCC-2 PACKAGE

Fig. 5 - Blister Tape

Fig. 6 - Tape Dimensions in mm for PLCC-2

TAPING STANDARDS GS08 AND GS18GS08: 1500 pcs/reel

GS18: 8000 pcs/reel

The tape leader is at least 160 mm and is followed by acarrier tape leader with at least 40 empty compartments(figure 3). The tape leader may include carrier tape as longas the cover tape is not connected to carrier tape.The last component is followed by a carrier tape trailer withat least 75 empty compartments, sealed with cover tape.

Fig. 7 - Reel Dimensions: GS08

Fig. 8 - Reel Dimensions: GS18

COVER TAPE REMOVAL FORCEThe removal force may vary in strength between 0.1 N and1.0 N at a removal speed of 5 mm/s.In order to prevent components from popping out of blisters,the cover tape must be pulled off at an angle of 180° relativeto the feed direction.

Adhesive tape

Component cavity

Blister tape

94 8670

1.851.65

4.03.6

3.63.4

2.051.95

1.61.4

4.13.9

4.13.9

5.755.25

8.37.7

3.53.1

2.22.0

0.25

94 8668

180178

4.53.5

2.51.5

13.0012.75

63.560.5

14.4 max.

10.09.0

120°

94 8665

Identification

Label:Vishaytypegrouptape codeproductioncodequantity

321329

Identification

4.53.5

2.51.5

13.0012.75

62.560.0

14.4 max.

10.48.4

120°

18857

Label:Vishaytypegrouptape codeproductioncodequantity



Information

TAPING SMD WITH PCB OR DOME PACKAGEDimensions in millimeters

Fig. 9 - Blister Tape of TEMD5000 and TEMD5100

Fig. 10 - Reel of TEMD5010X01/5020X01/5110X01/5120X01/5510FX01

16129

20874




Fig. 11 - Blister Tape of TEMD5010X01/5020X01/5110X01/5120X01/5510FX01

Fig. 12 - Reel of TEMx1000 Series and TSMx1000 SeriesQuantity per Reel: 1000 pcs

20537

Issue: 3; 11.06.08

Drawing-No.: 9.800-5080.01-4

Leader and trailer tape:

Parts mounted

Empty trailer (200 mm, min.)

Empty leader (400 mm, min.)

Direction of pulling out

Unreel direction

60.2

±0.

5

178

±1

2. 5

±0.5

Label posted here

coming out from reelTape position

X

X

13±

0.5

13.2 ±1.5

16 ±0.2

18033



Information

Fig. 13 - Blister Tape of TSMF1000, TSML1000, and TEMD1000


18030

3.05 ± 0.1

0.3 Ø 1.55 ± 0.05

4 ± 0.1

2 ± 0.05

4 ± 0.1

1.75

± 0

.15.

5 ±

0.0

5

12 ±

0.3

Top tape

Push pin through hole

Quantity per reel: 1000 pcs or 5000 pcs

Feed directionAnode

18031

3.05 ± 0.1

0.3 Ø 1.55 ± 0.05

4 ± 0.1

2 ± 0.05

4 ± 0.1

1.75

± 0

.15.

5 ±

0.0

5

12 ±

0.3

Top tape



Feed directionAnode





Fig. 16 - Blister Tape of TEMT1000

18032

3.05 ± 0.1

0.3 Ø 1.55 ± 0.05

4 ± 0.1

2 ± 0.05

4 ± 0.1

1.75

± 0

.15.

5 ±

0.0

5

12 ±

0.3

Top tape

Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs

Feed directionAnode

18089

3.05 ± 0.1

0.3 Ø 1.55 ± 0.05

4 ± 0.1

2 ± 0.05

4 ± 0.1

1.75

± 0

.15.

5 ±

0.0

5

12 ±

0.3

Top tape

Push pin through holeQuantity per reel: 1000 pcs or 5000 pcs

Feed directionCollector



Information

Fig. 17 - Blister Tape of TEMT1020 and TEMT1520

Fig. 18 - Blister Tape of TEMT1030

18090

3.05 ± 0.1

0.3 Ø 1.55 ± 0.05

4 ± 0.1

2 ± 0.05

4 ± 0.1

1.75

± 0

.15.

5 ±

0.0

5

12 ±

0.3

Top tape

Push pin through holeQuantity per reel: 1000 pcs or 5000 pcs


18091

3.05 ± 0.1

0.3 Ø 1.55 ± 0.05

4 ± 0.1

2 ± 0.05

4 ± 0.1

1.75

± 0

.15.

5 ±

0.0

5

12 ±

0.3

Top tape







Fig. 19 - Reel of TEMx6000 SeriesQuantity per Reel: 3000 pcs

Fig. 20 - Blister Tape of TEMD6010FX01

20874

20877



Information

Fig. 21 - Blister Tape of TEMT6000X01

Fig. 22 - Reel of TEMx6200X01 SeriesQuantity per reel: 3000 pcs

20875




Fig. 23 - Blister Tape of TEMT6200FX01

TAPING OF T-1 (3 mm) AND T-1 3/4 (5 mm) DEVICESThe taping specification is based on IEC publication 286,taking into account industrial requirements for automaticinsertion.Absolute maximum ratings, mechanical dimensions, opticaland electrical characteristics for taped devices are identicalto basic catalog types and can be found in specifications foruntaped devices.Note that the lead wires of taped components may beshorted or bent in accordance to the IEC standard.

PACKAGINGThe tapes of components are available on reels or inAmmopack. Each reel and each box is marked with labelcontaining the following information:

- Vishay

- Type

- Group

- Tape code (see figure 24)

- Productions code

- Quantity

CODE FOR TAPED DEVICES

Fig. 24 - Taping Code

Number of Packed Components

T-1 (3 mm): 2000 pcs

T-1 3/4 (5 mm): 1000 pcs

20690

Quantity per reel: 3000 pcs

Tape varieties Spacing of lead frameA, B, C, E, F, G, M

A 1

S: 2.54 mmT: 5.08 mm

12: Cathode/collector leaves the reel first

21: Anode/emitter leaves the reel first

1: Cathode/collector

2: Anode/emitter

A Z Z: only forfan fold packingboth polarities18801

2S

S



Information

MISSING COMPONENTSUp to 3 consecutive components may be missing but the gapis followed by at least 6 components. A maximum of 0.5 % ofcomponents per reel quantity may be missing. At least 5empty positions are present at the start and the end of thetape to enable tape insertion.Tensile strength of the tape: ≥ 15 NPulling force in plane of the tape, at right angles to reel: ≥ 5 NNote: Shipment in fan-fold packages is standard for radialtaped devices.Shipment in reel packing is only possible if the customerguarantees removal of empty reels.According to what is stated in a German packaging decree(Verpackungsverordnung) we are not able to accept return ofreels.

ORDERING CODEType designations are extended by a code for the tapingstandard.

Example:

TSAL6200-AS12 (reel packing)

TSAL6200-ASZ (fan-fold packing)

BPW85-AS12 (reel packing)

TABLE 3: TAPING SURVEY OF LEADED COMPONENTS

CODE FORTAPING STANDARD

“H“ - HIGH OF TAPING IN mm (TOLERANCES ± 0.5 mm) PREFERENCES REMARKS

3 mm 5 mm SIDEVIEW’S

AS12

17.3 17.3 16.0 Standard

Reel, cathode/collector leaves first

AS21 Reel, anode/emitter leaves first

ASZ Ammopack

CS12

22.0 22.0 -


CS21 Reel, anode/emitter leaves first

CSZ Ammopack

ES12

- 24.0 24.0 Standard


ES21 Reel, anode/emitter leaves first

ESZ Ammopack

EGZ - - 24.0Ammopack

2 mm pin distance lead to lead

MS12

25.5 25.5 -


MS21 Reel, anode/emitter leaves first

MSZ Ammopack

GSZ - - 29.0Ammopack


FSZ - - 27.0 Standard Ammopack

FGZ - - 27.0Ammopack





REEL DIMENSIONS in millimeters

Fig. 25 - Dimensions of the Reel

Fig. 26 - Components on Tape and Reel

AMMOPACKThe tape is folded in a concertina arrangement and laid in acardboard box.If components are required to have the cathode or collectorleave the box first (figure 27), then open the box at the sidemarked with the “-” symbol. If anode or emitter sould leavethe box first, then open at the side marked with the“+” symbol.

Fig. 27 - Tape Feed Direction

Identification label:

355

90

30

4845

52 max.

948641Vishay/type/group/tape code/production code/quantity

Paper

Adhesive tape

Identification labelReel

Tape

Diodes: anode before cathodePhototransistors: emitter before collectorCode 21

Diodes:cathode before anode

Phototransistors:collector before emitter

Code 12

94 8671

TABLE 4 - INNER DIMENSIONS OF AMMOPACK

Amm

Bmm

Cmm

COMPONENTS

340 46 125 T-1 3/4 (5 mm)

340 34 140 T-1 (3 mm) AS-taping

340 41 140 T-1 (3 mm) other than AS-taping

348 43 125 FSZ side view lens

348 46 125 GSZ side view lens

Tape feed direction code 12Diodes: cathode before anodeTransistors: collector before emitter

Label Tape feed direction code 21

C

B

A

94 8667

Diodes: anode before cathodeTransistors: emitter before collector



Information

TAPING OF T-1 (3 mm) PACKAGESPolarity options: Z, 12, 21

Fig. 28 - Taping of T-1 (3 mm) Devices

TAPING OF T-1 3/4 (5 mm) PACKAGESPolarity options: Z, 12, 21

Fig. 29 - Taping of T-1 3/4 (5 mm) Devices

Fig. 30 - Taping of Side View Lens Packages

TABLE 5 - POSITION OF T-1 (3 mm) COMPONENTS IN TAPE

OPTION H PREFERENCE

AS 17.3 ± 0.5 mm recommended

MS 25.5 ± 0.5 mm recommended

CS 22.0 ± 0.5 mm

Reel(Mat. - No. 1764)Quantity per:

200094 8171

TABLE 6 - POSITION OF T-1 3/4 (5 mm) COMPONENTS IN TAPE

OPTION H PREFERENCE

AS 17.3 ± 0.5 mm recommended

MS 25.5 ± 0.5 mm recommended

CS 22.0 ± 0.5 mm

ES 24.0 ± 0.5 mm

Reel(Mat. - No. 1764)Quantity per:

1000

94 8172

Option H

AS 16 ± 0.5 mm

ES 24 ± 0.5 mm

FS 27 ± 0.5 mm

GS 29 mm

EG 24 ± 0.5 mm

FG 27 ± 0.5 mm

+ 0.2- 0.5

18886

Ammopack

(Mat. - No. 1763)Quantity per:

2000

Bend leads:Lead standard xGStraight leads:Lead standard xS




Fig. 31 - Taping of Side View PIN Photodiodes

TUBE PACKAGING OF TOP VIEW PIN PHOTODIODES BP104S AND BPW34SDimensions in millimeters

Fig. 32 - Drawing Proportions Not Scaled

Quantity per:

Reel(Mat. - No. 1764)

1000

18887

Option H

AS 16 ± 0.5 mm

ES 24 ± 0.5 mm

MS 25.5 ± 0.5 mm

18800

Stopper

10.7

9.5

214.5

Quantity per tube: 45 pcsQuantity per box: 1800 pcs


Physics and Technology

Physics and TechnologyVishay Semiconductors

EMITTERS

Materials

Infrared emitting diodes (IREDs) can be produced from arange of different III-V compounds. Unlike the elementalsemiconductor silicon, compound III-V semiconductorsconsist of two or more different elements of group three (e.g.,Al, Ga, In) and five (e.g., P, As) of periodic table. Thebandgap energies of these compounds vary between0.18 eV and 3.4 eV. However, the IREDs considered hereemit in the near infrared spectral range between 800 nm and1000 nm, and, therefore, the selection of materials is limitedto GaAs and mixed crystal Ga1-XAlXAs, 0 ≤ X ≤ 0.8, madefrom pure compounds GaAs and AlAs.Infrared radiation is produced by the radiative recombinationof electrons and holes from the conduction and valencebands. Emitted photon energy, therefore, correspondsclosely to bandgap energy Eg. The emission wavelength canbe calculated according to the formula λ (µm) = 1.240/Eg(eV). Internal efficiency depends on band structure, dopingmaterial and doping level. Direct bandgap materials offerhigh efficiencies, because no phonons are needed forrecombination of electrons and holes. GaAs is a direct gapmaterial and Ga1-XAlXAs is direct up to X = 0.44. Dopingspecies Si provides the best efficiencies and the shiftsemission wavelength below the bandgap energy into theinfrared spectral range by about 50 nm typically. Chargecarriers are injected into the material via pn junctions.Junctions of high injection efficiency are readily formed inGaAs and Ga1-XAlXAs. P-type conductivity can be obtainedwith metals of valency two, such as Zn and Mg, and n-typeconductivity with elements of valency six, such as S, Se andTe. However, silicon of valency four can occupy sites ofIII-valence and V-valence atoms, and, therefore, acts asdonor and as acceptor. Conductivity type depends primarilyon material growth temperature. By employing exacttemperature control, pn junctions can be grown with thesame doping species Si on both sides of the junction. Ge, onthe other hand, also has a valency of four, but occupiesgroup V sites at high temperatures i.e., p-type.Only mono crystalline material is used for IRED production.In the mixed crystal system Ga1-XAlXAs, 0 ≤ X ≤ 0.8, latticeconstant varies only by about 1.5 x 10-3. Therefore, monocrystalline layered structures of different Ga1-XAlXAscompositions can be produced with extremely high structuralquality. These structures are useful because the bandgapcan be shifted from 1.40 eV (GaAs) to values beyond 2.1 eVwhich enables transparent windows and heterogeneousstructures to be fabricated. Transparent windows areanother suitable means to increase efficiency, andheterogeneous structures can provide shorter switchingtimes and higher efficiency. Such structures are termedsingle hetero (SH) or double hetero structures (DH). DHstructures consist normally of two layers that confine a layerwith a much smaller bandgap.

The best production method for all materials needed is liquidphase epitaxy (LPE). This method uses Ga-solutionscontaining As, possibly Al, and a doping substance. Thesolution is saturated at a high temperature, typically 900 °C,and GaAs substrates are dipped into the liquid. The solubilityof As and Al decreases with decreasing temperature. In thisway epitaxial layers can be grown by slow cooling of thesolution. Several layers differing in composition may beobtained using different solutions one after another, asneeded e.g. for DHs.In liquid phase epitaxial reactors, production quantities of upto 50 wafers, depending on type of structure required, can behandled.

IRED CHIPS AND CHARACTERISTICSAt present, the most popular IRED chip is made only fromGaAs. The structure of the chip is displayed in figure 1.

Fig. 1

On an n-type substrate, two Si-doped layers are grown byliquid phase epitaxy from the same solution producing anemission wavelegth of 950 nm. Growth starts as n-type athigh temperature and becomes p-type below about 820 °C.A structured Al-contact on p-side and a large area Au:Gecontact on back side provide a very low series resistance.The angular distribution of emitted radiation is displayed infigure 2.

Fig. 2

p - GaAs : SiAl

Au : Ge n - GaAs Substrate

ca. 420 mm

94 8200

n - GaAs : Si

0 20 40 60 80 %

0° 30°

60°

90°94 8197


Physics and TechnologyVishay Semiconductors Physics and Technology

The package of the chip has to provide good collectionefficiency of radiation emitted sideways, and has to diminishthe refractive index step between the chip (n = 3.6) and theair (n = 1.0) with an epoxy of refractive index of 1.55. In thisway, the output power of chip is increased by a factor of 3.5for the assembled device.The chip described is the most cost-efficient one. Its forwardvoltage at IF = 1.5 A has the lowest possible value. Totalseries resistance is typically only 0.60 Ω; output power andlinearity (defined as optical output power increase, divided bycurrent increase between 0.1 A and 1.5 A) are high. Relevantdata on chip and a typical assembled device are given intable 1.The technology used for a chip emitting at 880 nm eliminatesthe absorbing substrate and uses only a thick epitaxial layer.The chip is shown in figure 3.

Fig. 3

Originally, the GaAs substrate was adjacent to the n-side.Growth of Ga0.7Al0.3As started as n-type and became p-type- as in the first case - through the specific properties of thedoping material Si. A characteristic feature of the Ga-Al-Asphase system causes the Al-content of growing epitaxiallayer to decrease. This causes the Al-concentration at thejunction to drop to 8 % (Ga0.92Al0.08As), producing anemission wavelength of 880 nm. During further growth theAl-content approaches zero. The gradient of the Al-contentand correlated gradient of bandgap energy produce anemission band of a relatively large half width. Thetransparency of the large bandgap material results in a highexternal efficiency on this type of chip.The chip is mounted n-side up, and the front sidemetallization is Au:Ge/Au, whereas the reverse sidemetallization is Au:Zn.The angular distribution of the emitted radiation is displayedin figure 4.

Fig. 4

Due to its shorter wavelength, Ga1-XAlXAs chip describedabove offers specific advantages in combination with a Sidetector. Integrated opto ICs, like amplifiers or SchmittTriggers, have higher sensitivities at shorter wavelengths.Similarly, phototransistors are also more sensitive. Finally,the frequency bandwidth of pin diodes is higher at shorterwavelengths. This chip also has the advantage of havinghigh linearity up to and beyond 1.5 A. The forward voltage,however, is higher than the voltage of a GaAs chip. Table 2(see “Symbols and Terminology”) provides more data on thechip.A technology combining some of the advantages of the twotechnologies described above is summarized in figure 5.

Fig. 5

Starting an with n-type substrate, n- and p-type GaAs layersare grown in a similar way to the epitaxy of a standardGaAs:Si diode. After this, a highly transparent window layerof Ga1-XAlXAs, doped p-type is grown. The upper contact tothe p-side is made of Al and the rear side contact is Au:Ge.The angular distribution of emitted radiation is shown infigure 6.

ca. 370 mm

Au : Ge/Au

Au : Zn p - GaAlAs : Si

n - GaAlAs : Si

94 8201

0 20 40 60 80 %

0° 30°

60°

90°94 8198

p - GaAlAs : Ge

n - GaAs : SiAl

Au : Ge n - GaAs Substrate

p - GaAs : Si

ca. 420 mm94 8202

Physics and TechnologyPhysics and Technology Vishay Semiconductors


Fig. 6

This chip type combines a relatively low forward voltage witha high electro-optical efficiency, offering an optimizedcombination of the advantageous characteristics of the twoother chips. Refer again to table 2 (see “Symbols andTerminology”) for more details.As mentioned in the previous section, doubleheterostructures (DH) provide even higher efficiencies andfaster switching times. A schematic representation of such achip is shown in figure 7.

Fig. 7

The active layer is depicted as the thin layer between thep- and n- type Ga1-XAlXAs confinement layers.The contacts are dependent on the polarity of the chip. If p isup, then the p-side contact is Al and the back side Au:Ge; ifn is up, then this side has an Au:Ge contact and the backside Au:Zn.Two such chips that are also very suitable forIrDA applications are given in table 1.

UV, VISIBLE, AND NEAR IR SILICON PHOTODETECTORS(adapted from ”Sensors, Vol 6, Optical Sensors, Chapt. 8,VCH - Verlag, Weinheim 1991”)

Silicon Photodiodes (PN and PIN Diodes)

The physics of silicon detector diodes

Absorption of radiation is caused by the interaction ofphotons and charge carriers inside a material. The differentenergy levels allowed and the band structure determine thelikelihood of interaction and, therefore, the absorptioncharacteristics of the semiconductors. The long wavelengthcutoff of the absorption is given by the bandgap energy. Theslope of the absorption curve depends on the physics ofinteraction and is much weaker for silicon than for most othersemiconducting materials. This results in a strongwavelength-dependent penetration depth which is shown infigure 8. (The penetration depth is defined as that depthwhere 1/e of the incident radiation is absorbed.)

Fig. 8 - Absorption and Penetration Depth ofOptical Radiation in Silicon

0 20 40 60 80 %

0° 30°

60°

90°94 8199 ca. 420 mm

Anode

n - GaAlAsCathode

12781

p - GaAlAsp -GaAs

TABLE 1: CHARACTERISTICS DATA OF IRED CHIPS

TECHNOLOGYTYPICAL CHIP DATA

TYPICAL DEVICE

TYPICAL DEVICE DATA

Φe at 0.1 A(mW)

λp(nm)

Δλ(nm)

POLARITYΦe at 0.1 A

(mW)Φe at 1.5 A

(mW)VF at 0.1 A

(V)VF at 1.0 A

(V)tr at 0.1 A

(ns)

GaAs 7.7 950 50 p up TSUS540. 20 140 1.3 2.1 800

GaAlAs 6.7 875 80 n up TSHA550. 27 350 1.5 3.4 600

GaAlAs/GaAs 16 940 50 p up TSAL6200 35 300 1.35 2.4 800

GaAlAs/GaAlAs 16 890 40 p up TSHF5410 45 1.5 30

GaAlAs/GaAlAs 17 870 40 p up TSFF5410 50 1.5 15

0.4 0.6 0.8 1.0

Abs

orpt

ion

Coe

ffici

ent (

cm-1)

Wavelength (nm)

1.2

94 8595

Penetration D

epth (µm)

105

104

103

102

101

100

100

101

102

103

104

10-1

Si



Depending on the wavelength, the penetration depth variesfrom tenths of a micron at 400 nm (blue) to more than 100 µmat 1 µm (IR). For detectors to be effective, an interactionlength of at least twice the penetration depth should berealized (equivalent to 1/e2 = 86 % absorbed radiation). In thepn diode, generated carriers are collected by the electricalfield of the pn junction. Effects in the vicinity of a pn junctionare shown in figure 9 for various types and operating modesof the pn diode. Incident radiation generates mobile minoritycarriers - electrons on the p-side, holes on the n-side. In theshort circuit mode shown in figure 9 (top), the carriers driftunder the field of the built-in potential of the pn junction. Othercarriers diffuse inside the field-free semiconductor along aconcentration gradient, which results in an electrical currentthrough the applied load, or without load, in an externalvoltage, open circuit voltage, VOC, at contact terminals.Bending of the energy bands near the surface is caused bysurface states. An equilibrium is established betweengeneration, recombination of carriers, and current flowthrough the load.

Fig. 9 - Generation-Recombination Effects in the Vicinityof a PN Junction

Top: Short Circuit Mode, Bottom: Reverse Biased

Recombination takes place inside the bulk material withtechnology- and process-dependent time constants whichare very small near the contacts and surfaces of the device.For short wavelengths with very small penetration depths,carrier recombination is the efficiency limiting process. Toachieve high efficiencies, as many carriers as possible shouldbe separated by the electrical field inside the space chargeregion. This is a very fast process, much faster than typicalrecombination times (for data, see chapter ’Operating modes

and circuits’). The width, W, of the space charge is a functionof doping the concentration NB and applied voltage V:

(1)

(for a one-sided abrupt junction), where Vbi is built-in voltage,εs dielectric constant of Si, εo vacuum dielectric constant andq is electronic charge. The diode’s capacitance (which canbe speed limiting) is also a function of the space charge widthand applied voltage. It is given by

(2)

where A is the area of the diode. An externally applied biaswill increase the space charge width (see figure 8) with theresult that a larger number of carriers are generated insidethis zone which can be flushed out very fast with highefficiency under the applied field. From equation (1), it isevident that the space charge width is a function of the dopingconcentration NB. Diodes with a so-called pin structure showaccording to equation (1) a wide space charge width where istands for intrinsic, low doped. This zone is also sometimesnominated as n or p rather than low doped n, n- or p, p-zoneindicating the very low doping. Per equation (2), the junctioncapacitance C, is low due to the large space charge region ofPIN photodiodes. These photodiodes are mostly used inapplications requiring high speed.Figure 10 shows a cross section of PIN photodiodesand PN diodes. The space charge width of the PINphotodiodes (bottom) with a doping level (n = NB) as low asNB = 5 x 1011 cm-3 is about 80 µm wide for a 2.5 Vbias in comparison with a pn diode with a doping (n) ofNB = 5 x 1015 cm-3 with only 0.8 mm.

Fig. 10 - Comparison of PN Diode (Top)and PIN Photodiode (Bottom)

Without external bias

0

Ene

rgy

h

Surface States

94 8596

Reverse bias applied

0

Ene

rgy

h

94 8597

W2 εS εo Vbi V+( )×××

q NB×---------------------------------------------------------=

CεS εo× A×

W----------------------------=

n+

ν: to 10 000 Ωcmi

Space charge

p+

94 8599

Antireflection coatingIsolation layer

Space charge

n

Contact

1 to 10 Ωcm

p+Contact

94 8598

n+



PROPERTIES OF SILICON PHOTODIODES

I-V Characteristics of illuminated pn junction

The cross section and I-V-characteristics of a photodiode areshown in figure 11 and 12. The characteristic of theilluminated diode is identical to the characteristic of astandard rectifier diode. The relationship between current, I,and voltage, V, is given by

(3)

withVT = kT/q

k = 1.38 x 10-23 JK-1, Boltzmann constant

q = 1.6 x 10-19 As, electronic charge.

IS, the dark-reverse saturation current, is a material- andtechnology-dependent quantity. The value is influenced bythe doping concentrations at pn junction, by carrier lifetime,and especially by temperature. It shows a stronglyexponential temperature dependence and doubles every8 °C.

Fig. 11 - Measured I-V-Characteristics of an Si Photodiode in the Vicinity of the Origin

The typical dark currents of Si photodiodes are dependent onsize and technology and range from less than picoamps upto tens of nanoamps at room temperature conditions. Asnoise generators, dark current Ir0 and the resistance Rsh(defined and measured at a voltage of 10 mV forward orreverse, or peak-to-peak) are limiting quantities whendetecting very small signals.The photodiode exposed to optical radiation generates aphotocurrent Ir exactly proportional to incident radiant powerΦe.

Fig. 12 - I-V-Charachteristics of an Si Photodiode under Illumination. Parameter: Incident Radiant Flux

The quotient of both is spectral responsibility s(λ),

(4)

The characteristic of the irradiated photodiode is then given by

(5)

and in case V ≈ 0, zero or reverse bias we find,

(6)

Dependent on load resistance, RL, and applied bias, differentoperating modes can be distinguished. An unbiased diodeoperates in photovoltaic mode. Under short circuit conditions(load RL = 0 Ω), short circuit current, ISC flows into the load.When RL increases to infinity, the output voltage of the dioderises to the open circuit voltage, VOC, given by

(7)

Because of this logarithmic behavior, the open circuit voltageis sometimes used for optical light meters in photographicapplications. The open circuit voltage shows a strongtemperature dependence with a negative temperaturecoefficient. The reason for this is the exponentialtemperature coefficient of the dark reverse saturation currentIS. For precise light measurement, a temperature control ofthe photodiode is employed. Precise linear optical powermeasurements require small voltages at the load, typicallysmaller than about 5 % of the corresponding open circuitvoltage. For less precise measurements, an output voltageof half the open circuit voltage can be allowed. The mostimportant disadvantage of operating in photovoltaic mode isthe relatively large response time. For faster response, it isnecessary to implement an additional voltage sourcereverse-biasing the photodiode. This mode of operation istermed photoconductive mode. In this mode, the lowestdetectable power is limited by the shot noise of the darkcurrent, IS, while in photovoltaic mode, the thermal (Johnson)noise of shunt resistance, Rsh, is the limiting quantity.

I IS Vexp VT⁄ 1–( )×=F

orw

ard

Cur

rent

(nA

)

Rev

. Cur

rent

(nA

)

- 2

- 4

2

4

6

8

- 160 - 120 - 80 - 40

40 80

Rsh = dV/dl

Reverse Voltage (mV)

Forw. Volt. (mV)

94 8601

Φe = 0

Φe ISC

I

IΦ1VOC

94 8600

s λ( ) Ir φe⁄ A W⁄[ ]=

I IS Vexp VT⁄ 1–( ) s λ( ) φe×–×=

I IS s λ( ) φe×––=

VOC VT s λ( ) φe IS 1+⁄×( )ln×=



SPECTRAL RESPONSIVITY

Efficiency of Si photodiodes:

The spectral responsivity, sλ, is given as the number ofgenerated charge carriers (η x N) per incident photons N ofenergy h x ν (η is percent efficiency, h is the Plancksconstant, and ν is the radiation frequency). Each photon willgenerate one charge carrier at the most. The photocurrent Ireis then given as

(8)

(9)

At fixed efficiency, a linear relationship between wavelengthand spectral responsivity is valid.Figure 8 shows that the semiconductors absorb radiationsimilar to a cut-off filter. At wavelengths smaller than thecut-off wavelength, the incident radiation is absorbed. Atlarger wavelengths the radiation passes through the materialwithout interaction. The cut-off wavelength corresponds tothe bandgap of the material. As long as the energy of thephoton is larger than the bandgap, carriers can be generatedby absorption of photons, provided that the material is thickenough to propagate photon-carrier interaction. Bearing inmind that the energy of photons decreases with increasingwavelength, we can see, that the curve of the spectralresponsivity vs. wavelength in ideal case (100 % efficiency)will have a triangular shape (see figure 13). For siliconphotodetectors, the cut-off wavelength is near 1100 nm.In most applications, it is not necessary to detect radiationwith wavelengths larger than 1000 nm. Therefore, designersuse a typical chip thickness of 200 µm to 300 µm, whichresults in reduced sensitivity at wavelengths larger than950 nm. With a typical chip thickness of 250 µm, an efficiencyof about 35 % at 1060 nm is achieved. At shorterwavelengths (blue-near UV, 500 nm to 300 nm) sensitivity islimited by recombination effects near the surface of thesemiconductor. A reduction in efficiency starts near 500 nmand increases as the wavelength decreases. Standarddetectors designed for visible and near IR radiation mayhave poor UV/blue sensitivity and poor UV stability. Welldesigned sensors for wavelengths of 300 nm to 400 nm canoperate with fairly high efficiencies. At shorter wavelengths(< 300 nm), efficiency decreases strongly.

Fig. 13 - Spectral Responsivity as a Function of Wavelength of a Si Photodetector Diode, Ideal and Typical Values

Temperature dependence of spectral responsivity

The efficiency of carrier generation by absorption and theloss of carriers by recombination are the factors whichinfluence spectral responsivity. The absorption coefficientincreases with temperature. The radiation of the longwavelength is therefore more efficiently absorbed inside thebulk and results in increased response. For shorterwavelengths (< 600 nm), reduced efficiency is observed withincreasing temperature because of increased recombinationrates near the surface. These effects are strongly dependenton technological parameters and therefore cannot begeneralized to the behavior at longer wavelengths.

Uniformity of spectral responsivity

Inside the technologically defined active area ofphotodiodes, spectral responsivity shows a variation ofsensitivity on the order of < 1 %. Outside the defined activearea, and especially at lateral edges of the chips, localspectral response is sensitive to applied reverse voltage.Additionally, this effect depends on wavelength. Therefore,the relation between power (W) related spectral responsivity,sλ (A/W), and power density (W/cm2) related spectralresponsivity, sλ [A/(W/cm2)] is not a constant. Rather, thisrelation is a function of wavelength and reverse bias

Stability of spectral responsivity

Si detectors for wavelengths between 500 nm and 800 nmappear to be stable over very long periods of time. In theliterature concerned here, remarks can be found oninstabilities of detectors in blue, UV, and near IR undercertain conditions. Thermal cycling reversed the degradationeffects.Surface effects and contamination are possible causes butare technologically well controlled.

Angular dependence of responsivity

The angular response of Si photodiodes is given by theoptical laws of reflection. The angular response of a detectoris shown in figure 14.

Ire η N× q×=

sλ Ire φe⁄=

η N× q h ν× N×( ) η q h ν×( )⁄×=⁄×=

sλλ μm( )1.24

----------------- A W⁄[ ]=

400 600 800 10000

0.2

0.4

0.6

0.8

1.0

Spe

ctra

lRes

pons

itivi

ty(A

/W)

Wavelength (nm)

1200

94 8602



Fig. 14 - Responsivity of Si Photodiodes as a Function of the Angle of Incidence

Semiconductor surfaces are covered with quarterwavelength anti-reflection coatings. Encapsulation isperformed with uncoated glass or sapphire windows.The bare silicon response can be altered by optical imagingdevices such as lenses. In this way, nearly every arbitraryangular response can be achieved.

Dynamic Properties of Si Photodiodes

Si photodiodes are available in many different variations.The design of diodes can be tailored to meet special needs.Si photodiodes may be designed for maximum efficiency atgiven wavelengths, for very low leakage currents, or for highspeed. The design of a photodiode is nearly always acompromise between various aspects of a specification.Inside the absorbing material of the diode, photons can beabsorbed in different regions. For example at the top of ap+n--diode there is a highly doped layer of p+ - Si. Radiationof shorter wavelengths will be effectively absorbed, but forlarger wavelengths only a small amount is absorbed. In thevicinity of the pn junction, there is the space charge region,where most of the photons should generate carriers. Anelectric field accelerates the generated carrier in this part ofthe detector to a high drift velocity. Carriers which are notabsorbed in these regions penetrate into field-free regionwhere the motion of the generated carriers fluctuates by aslow diffusion process.The dynamic response of the detector is composed ofdifferent processes which transport carriers to contacts. Thedynamic response of photodiodes is influenced by threefundamental effects:

• Drift of carriers in an electric field

• Diffusion of carriers

• Capacitance x load resistance

Carrier drift in the space charge region occurs rapidly withvery small time constants. Typically, transit times in anelectric field of 0.6 V/µm are on the order of 16 ps/µm and50 ps/µm for electrons and holes, respectively. At(maximum) saturation velocity, the transit time is on the order

of 10 ps/µm for electrons in p-material. With a 10 µm driftregion, travelling times of 100 ps can be expected. Responsetime is a function of the distribution of the generated carriersand is therefore dependent on wavelength.The diffusion of the carriers is a very slow process. Timeconstants are on the order of some ms. The typical pulseresponse of the detectors is dominated by these twoprocesses. Obviously, carriers should be absorbed in largespace charge regions with high internal electrical fields. Thisrequires material with an adequate low doping level.Furthermore, a reverse bias of rather large voltage is useful.Radiation of shorter wavelength is absorbed in smallerpenetration depths. At wavelengths shorter than 600 nm,decreasing wavelength leads to an absorption in the diffusedtop layer. The movement of carriers in this region is alsodiffusion limited. Because of the small carrier lifetimes, thetime constants are not as large as in homogeneous substratematerial.Finally, capacitive loading of output in combination with loadresistance limits frequency response.

PROPERTIES OF SILICON PHOTOTRANSISTORSThe phototransistor is equivalent to a photodiode inconjunction with a bipolar transistor amplifier (figure 15).Typically, the current amplification, B, is between 100 and1000 depending on type and application. The active area ofphototransistor is usually about 0.5 x 0.5 mm2.The data of spectral responsivity are equivalent to those ofphotodiodes, but must be multiplied by the factor currentamplification, B.

Fig. 15 - Phototransistor, Cross Section and Equivalent Circuit

The switching times of phototransistors are dependent oncurrent amplification and load resistance and are between30 ms and 1 ms. The resulting cut-off frequencies are a fewhundred kHz.

0 0.2 0.4 0.6 0.8

0° 30°

60°

90°- 30°- 60°- 90°

0

0.2

0.4

0.6

0.8

1.0

Angle Relative Responsitivity

A/W

Acm2/W

94 8603

Emitter

n+

Base

Antireflection coating

Metallization Isolation

Collector

n

Backside contact

EA

pn

94 8605



The transit times, tr and tf, are given by

(10)

ft: Transit frequency

R: Load resistance, 1.6

CB: Base-collector capacitance, b= 4 to 5

V: Amplification

Phototransistors are most frequently applied in transmissiveand reflective optical sensors.

tr f, 1 2ft2⁄( )

2b RCBV( )2+=

Document Number: 80085 For technical questions concerning IR emitters, contact: [email protected] www.vishay.comRev. 1.3, 27-Aug-08 For technical questions concerning detectors, contact: [email protected] 27

Measurement Techniques

Measurement TechniquesVishay Semiconductors

INTRODUCTIONThe characteristics of optoelectronics devices given indatasheets are verified either by 100 % production testsfollowed by statistic evaluation or by sample tests on typicalspecimens. These tests can be divided into followingcategories:

• Dark measurements

• Light measurements

• Measurements of switching characteristics, cut-offfrequency and capacitance

• Angular distribution measurements

• Spectral distribution measurements

• Thermal measurements

Dark and light measurements limits are 100 %measurements. All other values are typical. The basiccircuits used for these measurements are shown in thefollowing sections. The circuits may be modified slightly toaccommodate special measurement requirements.Most of the test circuits may be simplified by use of a sourcemeasure unit (SMU), which allows either to source voltageand measure current or to source current and measurevoltage.

DARK AND LIGHT MEASUREMENTSEMITTER DEVICESIR Diodes (GaAs)

Forward voltage, VF, is measured either on a curve tracer orstatically using the circuit shown in figure 1. A specifiedforward current (from a constant current source) is passedthrough the device and the voltage developed across it ismeasured on a high-impedance voltmeter.

Fig. 1

To measure reverse voltage, VR, a 10 µA or 100 µA reversecurrent from a constant current source is impressed throughthe diode (figure 2) and the voltage developed across ismeasured on a voltmeter of high input impedance (≥ 10 MΩ).

Fig. 2

For most devices, VR is specified at 10 µA reverse current. Inthis case either a high impedance voltmeter has to be used,or current consumption of DVM has to be calculated andadded to the specified current. A second measurement stepwill then give correct readings.In case of GaAs IR diodes, total radiant output power, Φe, isusually measured. This is done with a calibrated large-areaphotovoltaic cell fitted in a conical reflector with a bore whichaccepts the test item - see figure 3. An alternative test setuses a silicon photodiode attached to an integrating sphere.A constant DC or pulsating forward current of specifiedmagnitude is passed through the IR diode. The advantage ofpulse-current measurements at room temperature (25 °C) isthat results can be reproduced exactly.

Fig. 3

If, for reasons of measurement economy, only DCmeasurements (figure 4) are to be made, then the energizingtime should be kept short (below 1 s) and of uniform duration,to minimize any fall-off in light output due to internal heating.

VS = 5 V

Ri > 10 kΩ

V

VF

I = 50 mA100 mA

constant

948205

VS = 80 V( > VR max.)

Ri > 10 MΩ

V

VR

I = 10 µA100 µAconstant

94 8206

IF

Photo Voltaic Cell, Calibrated

Reflector

94 8155

www.vishay.com For technical questions concerning IR emitters, contact: [email protected] Document Number: 8008528 For technical questions concerning detectors, contact: [email protected] Rev. 1.3, 27-Aug-08

Measurement TechniquesVishay Semiconductors Measurement Techniques

Fig. 4

To ensure that the relationship between irradiance andphotocurrent is linear, the photodiode should operate nearthe short-circuit configuration. This can be achieved by usinga low resistance load (≤ 10 Ω) of such a value that thevoltage dropped across is very much lower than the opencircuit voltage produced under identical illuminationconditions (Rmeas << Ri). The voltage across the load shouldbe measured with a sensitive DVM.A knowledge of radiant intensity, Ie, produced by an IRemitter enables customers to assess the range of IR lightbarriers. The measurement procedure for this is more or lessthe same as the one used for measuring radiant power. Theonly difference is that in this case the photodiode is usedwithout a reflector and is mounted at a specified distancefrom, and on the optical axis of, the IR diode (figure 5). Thisway, only the radiant power of a narrow axial beam isconsidered.The radiant power within a solid angle of Ω = 0.01 steradian(sr) is measured at a distance of 100 mm. Radiant intensityis then obtained by using this measured value for calculatingthe radiant intensity for a solid angle of Ω = 1 sr.

Fig. 5

DETECTOR DEVICESPhotovoltaic cells, photodiodes

• Dark measurements

The reverse voltage characteristic, VR, is measured either ona curve tracer or statically using the circuit shown in figure 6.A high-impedance voltmeter, which draws only an insignificantfraction of device’s reverse current, must be used.

Fig. 6

Dark reverse current measurements, Iro, must be carried outin complete darkness - reverse currents of silicon photodiodesare in the range of nanoamperes only, and an illumination of afew lx is quite sufficient to falsify the test result. If a highlysensitive DVM is to be used, then a current sampling resistorof such a value that voltage dropped across it is small incomparison with supply voltage must be connected in serieswith the test item (figure 7). Under these conditions, anyreverse voltage variations of the test samples can be ignored.Shunt resistance (dark resistance) is determined by applyinga very slight voltage to the photodiode and then measuringdark current. In case of 10 mV or less, forward and reversepolarity will result in similar readings.

Fig. 7

• Light measurements

The same circuit as used in dark measurement can be usedto carry out light reverse current, Ira, measurements onphotodiodes. The only difference is the diode is nowirradiated and a current sampling resistor of lower value mustbe used (figure 8), because of the higher currents involved.

VS = 5 V

Ri ≥ 10 kΩ

V

I = 100 mAconstant

RL = 1 Ω to 10 Ω

RL

Ik

94 8207

Position of the Emitting Area

a = 100 mm

= 0.01 sr

Photo Voltaic Cell with Filter (Calibrated), 1 cm 2

94 8156

Ω

Ri

V

VF

IR = 100 µAconstant

94 8209

≥ 10 MΩ

E = 0

VS > VR

VS = 20 V

Ri ≥ 1 MΩ

mV10 kΩ

Iro

94 8210

E = 0


Measurement TechniquesMeasurement Techniques Vishay Semiconductors

Fig. 8

The open circuit voltage, VO, and short circuit current, Ik, ofphotovoltaic cells and photodiodes are measured by meansof the test circuit shown in figure 9. The value of the loadresistor used for the Ik measurement should be chosen sothat the voltage dropped across it is low in comparison withthe open circuit voltage produced under conditions ofidentical irradiation.

Fig. 9

The light source used for the light measurements is acalibrated incandescent tungsten lamp with no filters. The filament current is adjusted for a color temperature of2856 K (standard illuminant A to DIN 5033 sheet 7). Aspecified illumination, Ev, (usually 100 lx or 1000 lx) isproduced by adjusting the distance, a, between the lamp anda detector on an optical bench. Ev can be measured on aV(λ)-corrected luxmeter, or, if luminous intensity, Iv, of thelamp is known, Ev can be calculated using the formula:Ev = Iv/a2.It should be noted that this inverse square law is only strictlyaccurate for point light sources, that is for sources where thedimensions of the source (the filament) are small (≤ 10 %) incomparison with the distance between the source anddetector.Since lux is a measure for visible light only, near-infraredradiation (800 nm to 1100 nm) where silicon detectors havetheir peak sensitivity is not taken into account. Unfortunately,the near-infrared emission of filament lamps of variousconstruction varies widely. As a result, light current

measurements carried out with different lamps (but the samelux and color temperature calibration) may result in readingsthat differ up to 20 %.The simplest way to overcome this problem is to calibrate(measure the light current) some items of a photodetectortype with a standard lamp (OSRAM WI 41/G) and then usethese devices for adjustment of the lamp used for fieldmeasurements.An IR diode is used as a radiation source (instead of aTungsten incandescent lamp), to measure detector devicesbeing used mainly in IR transmission systems together withIR emitters (e.g., IR remote control, IR headphone).Operation is possible both with DC or pulsed current.The adjustment of irradiance, Ee, is similar to the abovementioned adjustment of illuminance, Ev. To achieve a highstability similar to filament lamps, consideration should begiven to the following two points:

• The IR emitter should be connected to a good heat sink toprovide sufficient temperature stability.

• DC or pulse-current levels as well as pulse duration havegreat influence on self-heating of IR diodes and should bechosen carefully.

• The radiant intensity, Ie, of the device is permanentlycontrolled by a calibrated detector.

Phototransistors

The collector emitter voltage, VCEO, is measured either on atransistor curve tracer or statically using the circuit shown infigure 10. Normal bench illumination does not change themeasured result.

Fig. 10

In contrast, however, the collector dark current, ICEO or ICO,must be measured in complete darkness (figure 11). Evenordinary daylight illumination of the wire fed-through glassseals would falsify the measurement result.

VS = 20 V

Ri = 10 kΩ

mV

EA = 1 klx orEe = 1 mW/cm2

10 Ω

Ira

94 8211

Ri ≥ 10 MΩ

mV

EA = 1 klx orEe = 1 mW/cm2

1 Ω to 10 Ω

Ik VO

94 8212

Ri ≥ 1 MΩ

V

VCEO

IC = 1 mAconstant

VS = 80 V

94 8213

( < VCEO )

E < 100 lx



Fig. 11

The same circuit is used for collector light current, Ica,measurements (figure 12). The optical axis of the device isaligned to an incandescent tungsten lamp with no filters,producing a CIE illuminance A of 100 lx or 1000 lx with acolor temperature of Tf = 2856 K. Alternatively an IRirradiance by a GaAs diode can be used (refer to thephotovoltaic cells and photodiodes section). Note that alower sampling resistor is used, in keeping with the highercurrent involved.

Fig. 12

To measure collector emitter saturation voltage, VCEsat, thedevice is illuminated and a constant collector current ispassed through. The magnitude of this current is adjustedbelow the level of the minimum light current, Ica min, for thesame illuminance (figure 13). The saturation voltage of thephototransistor (approximately 100 mV) is then measured ona high impedance voltmeter.

Fig. 13

SWITCHING CHARACTERISTICSDefinition

Each electronic device generates a certain delay betweeninput and output signals as well as a certain amount ofamplitude distortion. A simplified circuit (figure 14) showshow input and output signals of optoelectronic devices canbe displayed on a dual-trace oscilloscope.

Fig. 14

The switching characteristics can be determined bycomparing the timing of output current waveform with theinput current waveform (figure 15).

Ri = 1 MΩ

ICO

VS = 20 V

10 kΩ mV

94 8214

E = 0

Ri ≥ 10 kΩ

Ica

VS = 5 V

Ee = 1 mW/cm2 orEA = 1 klx

1 Ω to 10 Ω mV

94 8215

Ri ≥ 1 MΩ

V

VCEsat

IC = constant

VS = 5 V

Ee = 1 mW/cm2 orEA = 1 klx

94 8216

VS

Channel I Channel II

GaAs-Diode

IF

Channel II

VSChannel II

94 8219



Fig. 15

These time parameters also include the delay existing in aluminescence diode between forward current (IF) and radiantpower Φe).

Notes Concerning the Test Set-up

Circuits used for testing IR emitting, emitting sensitive andoptically coupled isolator devices are basically the same(figure 14). The only difference is the way in which testdevice is connected to the circuit.It is assumed that rise and fall times associated with thesignal source (pulse generator) and dual trace oscilloscopeare insignificant, and that the switching characteristics of anyradiant sensitive device used in set-up are considerablyshorter than those of the test item. The switchingcharacteristics of IR emitters, for example(tr ≈ 10 ns to 1000 ns), are measured with aid of a PINPhotodiode detector (tr ≈ 1 ns).Photo- and darlington transistors and photo- and solar cells(tr ≈ 0.5 µs to 50 µs) are, as a rule, measured by use of fastIR diodes (tr < 30 ns) as emitters.Red light-emitting diodes are used as light sources only fordevices which cannot be measured with IR diodes becauseof their spectral sensitivity (e.g. BPW21R). These diodesemit only 1/10 of radiant power of IR diodes andconsequently generate only very low signal levels.

Switching Characteristic Improvements onPhototransistors and Darlington Phototransistors

As in any ordinary transistor, switching times are reduced ifdrive signal level, and hence collector current, is increased.Another time reduction (especially in fall time tf) can beachieved by use of a suitable base resistor, assuming thereis an external base connection, although this can only bedone at the expense of sensitivity.

TECHNICAL DESCRIPTION - ASSEMBLYEmitter

Emitters are manufactured using the most modern liquidphase epitaxy (LPE) process. By using this technology, thenumber of undesirable flaws in the crystal is reduced. Thisresults in a higher quantum efficiency and thus higherradiation power. Distortions in the crystal are prevented byusing mesa technology which leads to lower degradation. Afurther advantage of the mesa technology is that eachindividual chip can be tested optically and electrically, evenon the wafer.

DETECTORVishay Semiconductor detectors have been developed tomatch perfectly to emitters. They have low capacitance, highphotosensitivity, and extremely low saturation voltage.Silicon nitride passivation protects surface against possibleimpurities.

Assembly

Components are fitted onto lead frames by fully automaticequipment using conductive epoxy adhesive. Contacts areestablished automatically with digital pattern recognitionusing well-proven thermosonic techniques. All componentare measured according to the parameter limits given in thedatasheet.

Applications

Silicon photodetectors are used in manifold applications,such as sensors for radiation from near UV over visible tonear infrared. There are numerous applications inmeasurement of light, such as dosimetry in UV, photometry,and radiometry. A well known application is shutter control incameras.Another large application area for detector diodes, andespecially phototransistors, is position sensing.Examples are differential diodes, optical sensors, and reflexsensors.

Other types of silicon detectors are built-in as parts ofoptocouplers.One of the largest application areas is remote control of TVsets and other home entertainment appliances.Different applications require specialized detectors and alsospecial circuits to enable optimized functioning.

t p t

t

0

010 %

90 %

100 %

t r

t d

t on

t st f

t off

I F

IC

tp Pulse durationtd Delay timetr Rise timeton (= td + tr) Turn-on time

ts Storage timet f Fall timetoff (= ts + tf) Turn-off time

96 11698



Equivalent circuit

Photodetector diodes can be described by the electricalequivalent circuit shown in figure 16.

Fig. 16

(1)

(2)

As described in the chapter “I-V Characteristics ofilluminated pn junction”, the incident radiation generates aphotocurrent loaded by a diode characteristic and loadresistor, RL. Other parts of the equivalent circuit (parallelcapacitance, C, combined from junction, Cj, and straycapacitances, serial resistance, RS, and shunt resistance,Rsh, representing an additional leakage) can be neglected inmost standard applications, and are not expressed inequations 5 and 7 (see “Physics and Technology”).However, in applications with high frequencies or extremeirradiation levels, these parts must be regarded as limitingelements.

Searching for the right detector diode typeThe BPW 20 RF photodiode is based on rather highly dopedn-silicon, while BPW34 is a PIN photodiode based on verylightly doped n-silicon. Both diodes have the same activearea and spectral response as a function of wavelength isvery similar. These diodes differ in their junction capacitanceand shunt resistance. Both can influence the performance ofan application.Detecting very small signals is the domain of photodiodeswith their very small dark currents and dark/shuntresistances.With a specialized detector technology, these parametersare very well controlled in all Vishay photodetectors.The very small leakage currents of photodiodes are offset byhigher capacitances and smaller bandwidths in comparisonto PIN photodiodes.Photodiodes are often operated in photovoltaic mode,especially in light meters. This is depicted in figure 17, where

a strong logarithmic dependence of the open circuit voltageon the input signal is used.

Fig. 17 - Photodiode in the Photovoltaic Mode Operating with a Voltage Amplifier

with (3)

(2)

It should be noted that extremely high shunt/dark resistance(more than 15 GΩ) combined with a high-impedanceoperational amplifier input and a junction capacitance ofabout 1 nF can result in slow switch-off time constants ofsome seconds. Some instruments therefore have a resetbutton for shortening the diode before starting ameasurement.The photovoltaic mode of operation for precisemeasurements should be limited to the range of low ambienttemperatures, or a temperature control of the diode(e.g., using a Peltier cooler) should be applied. At hightemperatures, dark current is increased (see figure 18)leading to a non-logarithmic and temperature dependentoutput characteristic (see figure 19). The curves shown infigure 18 represent typical behavior of these diodes.Guaranteed leakage (dark reverse current) is specified withIro = 30 nA for standard types. This value is far from that onewhich is typically measured. Tighter customer specificationsare available on request. The curve shown in figure 19 showthe open circuit voltage as a function of irradiance with darkreverse current, IS, as a parameter (in a first approximationincreasing IS and Ish have the same effect). The parametershown covers the possible spread of dark current. Incombination with figure 18 one can project the extremedependence of the open circuit voltage at high temperatures(figure 20).

Rsh

Rs

RL

Ish

Iph

Id

VD V0

I0

94 8606

IO Iph ID– Ish–=

IO Iph IsqVD

kT-----------exp 1–⎝ ⎠

⎛ ⎞– Ish–=

VOC VT

s λ( ) φe Ish–×Is

------------------------------------- 1+⎝ ⎠⎛ ⎞ln×=

R2

R1

V0

94 8607

VO VOC 1 R1 R2⁄+[ ]×≈

VOC VT s λ( ) φe Is⁄ 1+×( )ln×=



Fig. 18 - Reverse Dark Current vs. Temperature

Fig. 19 - Open Circuit Voltage vs. Irradiance, Parameter: Dark Reverse Current, BPW20RF

Fig. 20 - Open Circuit Voltage vs. Temperature, BPW46

Operating modes and circuits

The advantages and disadvantages of operating aphotodiode in open circuit mode have been discussed.For operation in short circuit mode (see figure 21) orphotoconductive mode (see figure 22), current-to-voltageconverters are typically used. In comparison withphotovoltaic mode, the temperature dependence of theoutput signal is much lower. Generally, the temperaturecoefficient of the light reverse current is positive forirradiation with wavelengths > 900 nm, rising with increasingwavelength. For wavelengths < 600 nm, a negativetemperature coefficient is found, likewise with increasingabsolute value to shorter wavelengths.Between these wavelength boundaries the output is almostindependent of temperature. By using this mode ofoperation, the reverse biased or unbiased (short circuitconditions), output voltage, VO, will be directly proportional toincident radiation, φe (see equation in figure 21).

Fig. 21 - Transimpedance Amplifier, Current to Voltage Converter, Short Circuit Mode

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(5)

Fig. 22 - Transimpedance Amplifier, Current to Voltage Converter, Reverse Biased Photodiode

The circuit in figure 21 minimizes the effect of reverse darkcurrent while the circuit in figure 22 improves the speed of thedetector diode due to a wider space charge region withdecreased junction capacitance and field increased velocityof the charge carrier transport.

- 20 20 60 100 140

Cur

rent

(nA

)

Temperature (°C)94 8608

0

107

101

103

105

Reverse Bias Voltage Vr = 20 V BPW24R

BPW20RF

10-1

0.01 0.1 1000

100

200

300

400

Ope

n C

ircui

t Vol

tage

(m

V)

Irradiance (µW)

1000

94 8609

10 pA

100 pA

5 nA

1 nA

30 nA

1 10

0

100

200

300

400

Ope

n C

ircui

t Vol

tage

(m

V)

Temperature (°C)

100

94 8610

0 20 40 60 80

R

V0

94 8611

VO R Φe× s λ( )×–=

VO Isc R×–=

R

V0

Vb

94 8612



Fig. 23 - RC-Loaded Photodiode with Voltage Amplifier

Figure 23 shows photocurrent flowing into an RC load, whereC represents junction and stray capacity while R3 can be areal or complex load, such as a resonant circuit for theoperating frequency.

Fig. 24 - AC-Coupled Amplifier Circuit

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The circuit in figure 24 is equivalent to figure 23 with achange to AC coupling. In this case, the influence ofbackground illumination can be separated from a modulatedsignal. The relation between input signal (irradiation, φe) andoutput voltage is given by the equation in figure 24.

Frequency response

The limitations of switching times in photodiodes aredetermined by carrier lifetime. Due to the absorptionproperties of silicon, especially in photodiodes, most ofincident radiation at longer wavelengths is absorbed outsidethe space charge region. Therefore, a strong wavelengthdependence of the switching times can be observed(figure 25).

Fig. 25 - Switching Times vs. Wavelength for Photodiode BPW20RF

A drastic increase in rise and fall times is observed atwavelengths > 850 nm. Differences between unbiased andbiased operation result from the widening of the spacecharge region.However, for PIN photodiodes (BPW34/TEMD5000 family)similar results with shifted time scales are found. An exampleof such behavior, in this case in the frequency domain, ispresented in figure 26 for a wavelength of 820 nm andfigure 27 for 950 nm.

Fig. 26 - BPW34, TEMD5010X01, Bandwidth vs.Reverse Bias Voltage, Parameter: Load Resistance, λ = 820 nm

V0

R2

R1R3

Vb

C

94 8613

V0

R2

R1R3

Vb

C1

C2

94 8614

VO φe s λ( ) R× 3 1 R1 R2⁄+[ ]××≈

0

5

10

15

20

25

30

Wavelength (nm)550 600 650 700 750 800 850 900 950

Ris

e T

ime

t r, F

all T

ime

t f (µ

s)

948615

tr = 0 V tf = 0 V

tf = - 10 Vtr = - 0 V

0

2

4

6

8

12

Rev

erse

Bia

s (V

)

94 8616

10

104 106105 108107

RL =

50 Ω

100 kΩ

10 kΩ

1 kΩ




Fig. 27 - BPW41, TEMD5110X01, Bandwidth vs.Reverse Bias Voltage, Parameter: Load Resistance λ = 950 nm

Below about 870 nm, only slight wavelength dependencecan be recognized, while a steep change of cut-off frequencytakes place from 870 nm to 950 nm (different time scales infigure 26 and figure 27). Additionally, the influence of loadresistances and reverse bias voltages can be taken fromthese diagrams.

For cut-off frequencies greater than 10 MHz to 20 MHz,depending on the supply voltage available for biasing thedetector diode, PIN photodiodes are also used. However, forthis frequency range, and especially when operating with lowbias voltages, thin epitaxially grown intrinsic (i) layers areincorporated into PIN photodiodes.As a result, these diodes (e.g., Vishay’s TESP5700) canoperate with low bias voltages (3 V to 4 V) with cut-offfrequencies of 300 MHz at a wavelength of 790 nm. Withapplication-specific optimized designs, PIN photodiodes withcut-off frequencies up to 1 GHz at only a 3 V bias voltage withonly an insignificant loss of responsivity can be generated.The main applications for these photodiodes are found inoptical local area networks operating in the first opticalwindow at wavelengths of 770 nm to 880 nm.

WHICH TYPE FOR WHICH APPLICATION?In table 1, selected diode types are assigned to differentapplications. For more precise selection according to chipsizes and packages, refer to the tables in introductory pagesof this data book.

PHOTOTRANSISTOR CIRCUITSA phototransistor typically operates in a circuit shown infigure 28. Resistor RB can be omitted in most applications. Insome phototransistors, the base terminal is not connected.RB can be used to suppress background radiation by settinga threshold level (see equation 7 and 8)

VO = VS - B × φe × s(λ) × RL (7)

VO ≈ VS - (B × φe × s(λ) - 0.6/RB) × RL (8)

For the dependence of rise and fall times on load resistanceand collector-base capacitance, see the chapter “Propertiesof Silicon Phototransistors”.

Fig. 28 - Phototransistor with Load Resistor andOptional Base Resistor

0

2

4

6

8

12

Rev

erse

Bia

s (V

)

94 8617

10

10 105104 107106

10 kΩ

50 Ω

1 kΩ

100 kΩ

RL = 1 MΩ

3


TABLE 1 - PHOTODIODE REFERENCE TABLE

DETECTOR APPLICATION PIN PHOTODIODE PHOTODIODEEPI PIN

PHOTODIODE

Photometry, light meter BPW21R

Radiometry TEMD5010X01, BPW34, BPW24R, ... BPW20RF

Light barriers BPV10NF, BPW24R

Remote control, IR filter included, λ > 900 nm BPV20F, BPV23F, BPW41N, S186P, TEMD5100X01

IR Data Transmission fc < 10 MHz IR filter included, λ > 820 nm

BPV23NF, BPW82, BPW83, BPV10NF, TEMD1020, TEMD5110X01

IR Data Transmission, fc > 10 MHz, no IR filter BPW34, BPW46, BPV10, TEMD5010X01 TESP5700

Densitometry BPW34, BPV10, TEMD5010X01 BPW20RF, BPW21R

Smoke detector BPV22NF, BPW34, TEMD5010X01

RL

Vs

RB

V0

94 8618

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Revision: 12-Mar-12 1 Document Number: 91000

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