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ECE-305: Spring 2016 Basics of Device Fabrication Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA [email protected] 2/16/16 Pierret, Semiconductor Device Fundamentals (SDF) pp. 149-174

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Lundstrom ECE 305 S16

ECE-305: Spring 2016

Basics of Device Fabrication

Professor Mark Lundstrom Electrical and Computer Engineering

Purdue University, West Lafayette, IN USA [email protected]

2/16/16

Pierret, Semiconductor Device Fundamentals (SDF) pp. 149-174

announcements

2 Lundstrom ECE 305 S16

If you are planning to attend graduate or professional school, you will need 3 faculty references. I only give references to people who have:

1)  Visited me during my office hours at least twice.

It would also be very helpful for you all to:

2) e-mail me a photo of yourself.

integrated circuit resistors

3

L

W

!S " !( )

R = !S

LW

"#$

%&'

P-type Lundstrom ECE 305 S16

N-type

lithography

4 Fig. 4.11 from R.F. Pierret, Semiconductor Device Fundamentals

Integrated circuit resistors

5

P-Si

Lundstrom ECE 305 S16

1)  Oxidize

SiO2

2) Coat with resist

resist

Integrated circuit resistors

6

P-Si

1)  Oxidize

SiO2

2) Coat with resist

resist

3) Expose light

Lundstrom ECE 305 S16

Integrated circuit resistors

7

P-Si

1)  Oxidize

SiO2

2) Coat with resist

resist

3)  Expose

4) Develop

Lundstrom ECE 305 S16

Integrated circuit resistors

8

P-Si

1)  Oxidize

SiO2

2) Coat with resist

resist

3)  Expose

4) Develop

5) Etch

Lundstrom ECE 305 S16

Integrated circuit resistors

9

P-Si

1)  Oxidize

SiO2

2) Coat with resist

3)  Expose

4) Develop

5) Etch 6) Strip resist

Lundstrom ECE 305 S16

Integrated circuit resistors

10

P-Si

1)  Oxidize

SiO2

2) Coat with resist

3)  Expose

4) Develop

5) Etch

6) Strip resist

7) Dope

P+

L

t

Lundstrom ECE 305 S16

Integrated circuit resistors

11

P-Si

1)  Oxidize

SiO2

2) Coat with resist

3)  Expose

4) Develop

5) Etch 6) Strip resist

7) Dope

L t

8) Anneal and Oxidize

Lundstrom ECE 305 S16

Integrated circuit resistors

12

P-Si

1)  Oxidize

SiO2

2) Coat with resist

3)  Expose

4) Develop

5) Etch 6) Strip resist

7) Dope

L t

8) Anneal/Oxidize

9) Open contacts

Lundstrom ECE 305 S16

Integrated circuit resistors

13

P-Si

1)  Oxidize

SiO2

2) Coat with resist

3)  Expose

4) Develop

5) Etch 6) Strip resist

7) Dope

t

8) Anneal/Oxidize

9) Open contacts

10)  Deposit metal pattern, etch

L

Our resistor is also PN junction! Lundstrom ECE 305 S16

integrated circuit resistors

14

L

W

!S " !( )

R = !S

LW

"#$

%&'

P-type Lundstrom ECE 305 S16

for more on IC manufacturing

15

ECE 612 Purdue University:

https://nanohub.org/resources/5788

https://nanohub.org/resources/5855

Lundstrom ECE 305 S16

ECE 557 Purdue University:

16 Lundstrom ECE-305 S16

“The most important moment since humankind emerged as a life form.”

Isaac Asimov

(speaking about the “planar process” used to manufacture ICs -- invented by Jean Hoerni, Fairchild Semiconductor, 1959).

IEEE Spectrum Dec. 2007