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Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for Advanced X-ray Technologies, Reflex sro, Czech Republic Institute of Chemical Technology, Prague, Czech Republic ON Semiconductor, Rožnov pod Radhoštěm, Czech Republic Novel X-ray Optics with Si Wafers and Formed Glass IBWS Vlasim 2006 R. Hudec, L. Pína, A. Inneman, V. Semencová, M. Skulinová, L. Švéda, V. Brožek, J. Šik, M. Míka, R. Kačerovský, J. Prokop

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Page 1: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic

Czech Technical University, Prague, Czech Republic

Centre for Advanced X-ray Technologies, Reflex sro, Czech Republic

Institute of Chemical Technology, Prague, Czech Republic

ON Semiconductor, Rožnov pod Radhoštěm, Czech Republic

Novel X-ray Optics

with Si Wafers and Formed

Glass

Novel X-ray Optics

with Si Wafers and Formed

GlassIBWS Vlasim 2006

R. Hudec, L. Pína, A. Inneman, V. Semencová, M. Skulinová, L. Švéda, V. Brožek, J. Šik, M. Míka, R. Kačerovský, J.

Prokop

R. Hudec, L. Pína, A. Inneman, V. Semencová, M. Skulinová, L. Švéda, V. Brožek, J. Šik, M. Míka, R. Kačerovský, J.

Prokop

Page 2: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Long Term ISS Utilisation

Page 3: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

ESA XEUS

Page 4: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for
Page 5: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

XEUS will have a very large collecting area and fine angular resolution of 2..5" so very light-weight novel X-ray optics is to be developed

Page 6: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Czech participation

• ESA PECS project accepted for funding from Dec 2006, PI L. Pina Reflex, CI ASU, VSCHT, FJFI CVUT. Duration 4 years.

• Preliminary results described in this talk were obtaained WITHOUT any funding thanks to the enthuniasmus of participants.

Page 7: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

1. the Si wafers parameters are optimized already at the production stage

2. the Si wafers are shaped to precise optical surfaces/shapes

3. the internal stress is minimized. Important. The standard Si wafers are not stress-free.

4. the shaped/bent Si wafers are stacked to form the Multi Foil Optics (MFO)

1. the Si wafers parameters are optimized already at the production stage

2. the Si wafers are shaped to precise optical surfaces/shapes

3. the internal stress is minimized. Important. The standard Si wafers are not stress-free.

4. the shaped/bent Si wafers are stacked to form the Multi Foil Optics (MFO)

Our approach to X-ray optics based on Si wafers

Our approach to X-ray optics based on Si wafers

Page 8: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

the production of Si wafers is a complex process. The recent Si wafers are optimized for semiconductor industry but not for X-ray optics applications

we use Si wafers already at production optimized for X-ray optics application

precise measurements and optimization already at production stage are important for X-ray optics based on Si wafers

the production of Si wafers is a complex process. The recent Si wafers are optimized for semiconductor industry but not for X-ray optics applications

we use Si wafers already at production optimized for X-ray optics application

precise measurements and optimization already at production stage are important for X-ray optics based on Si wafers

Measuring the quality of flat

Si wafers

Measuring the quality of flat

Si wafers

Page 9: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Comparison of properties of Si wafers produced by different

manufacturers

Comparison of properties of Si wafers produced by different

manufacturers

CZ2 – ON Semiconductor Czech Republic

MEMC – MEMC Electronic Materials

SHE – Shin Etsu SEH

WW – Wafers Works

standard Si wafersstandard Si wafers

Page 10: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Thickness homogeneity of standard Si wafer

Thickness homogeneity of standard Si wafer

Flatness and thickness uniformity of a standard Si wafer (diameter 150 mm). Expected to

further improve due to technological innovations planned.

Flatness and thickness uniformity of a standard Si wafer (diameter 150 mm). Expected to

further improve due to technological innovations planned.

min. thickness 686.07 m

max.thickness 687.75 m

ave. thickness 687.18 m

cen. thickness 686.92 m

TTV Total Thickness Variation

1.68 m

TIR Total Indicated Reading

1.81 m

produced by ON Semiconductor Czech Republicproduced by ON Semiconductor Czech Republic

Page 11: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

6“ Silicon Wafer Manufacturing Process Flow Chart

CHEMICAL CLEANING

SINGLE CRYSTAL GROWING

INGOT SHAPING EVALUATION

SLICING EDGE GRINDING

LASER MARKING*

LAPING AND CLEANING

ACID ETCH ANNEALING*

BACKSIDE TREATMENT*

BACKSEAL OXIDE, POLYSILICON*

New step: GRINDING

POLISHING

MECHANICAL CLEANING

FLATTING

* Optional INSPECTION

Page 12: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Ground Si wafer

TTV 0.37 m

Diamond Grinding Technology for Ideal Flatness

Page 13: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

6“ Silicon Polished Wafer: Flatness Evolution (TTV)

TTV = 0.76 m TTV = 1.68 m

TTV < 2 m (2005)process optimization

TTV < 1 m (2006)grinding technology

TTV < 0.5 m (2007)new polisher (ordered)

measured Total Thickness Variation

Page 14: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

flat Si wafer (dopant As), D = 150 mm, t = 0.625 mmSpecial very flat Si wafers have been developed

in the collaborating industry for use in X-ray optics

flat Si wafer (dopant As), D = 150 mm, t = 0.625 mmSpecial very flat Si wafers have been developed

in the collaborating industry for use in X-ray optics

Measuring of shape Measuring of shape Still optical profilometer – 3D chartStill optical profilometer – 3D chart

Page 15: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Flat Si wafer, D = 150 mm, t = 0.625 mm ON Semiconductor Czech Republic,

Taylor-Hobson profilometer, 2 perpendicular axes

Flat Si wafer, D = 150 mm, t = 0.625 mm ON Semiconductor Czech Republic,

Taylor-Hobson profilometer, 2 perpendicular axes

Flatness better than 1 m

Page 16: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Flat Si wafer D=150 mmt=0.625 mm)ON SEMICONDUCTOR

Measuring of microroughness

Measuring of microroughness

AFM microscope, Ra ~ 0.1 nm in 10 x 10 mAFM microscope, Ra ~ 0.1 nm in 10 x 10 m

Page 17: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Measuring of roughnessMeasuring of roughness

Interferometer Zygo, Ra ~ 0.2 nm in 1.4 x 1.1 mmInterferometer Zygo, Ra ~ 0.2 nm in 1.4 x 1.1 mm

dopant B, D = 150 mm, t = 0.625 mm

ON Semiconductor, Czech Republic

dopant B, D = 150 mm, t = 0.625 mm

ON Semiconductor, Czech Republic

Page 18: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Measuring of roughnessMeasuring of roughness

Interferometer ZygoInterferometer Zygo

effect of various dopants on roughness

effect of various dopants on roughness(boron-B and phosphorus-P)(boron-B and phosphorus-P)

Page 19: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

SHAPING OF SI WAFERSSHAPING OF SI WAFERS

the goal is to precisely shape Si wafers to desired optical shape and to remove the internal stress

3 different technologies tested (I, II, III)

so far, Si wafers have been shaped to test cylindrical and parabolic surfaces both in 1 and in 2 dimensions

the goal is to precisely shape Si wafers to desired optical shape and to remove the internal stress

3 different technologies tested (I, II, III)

so far, Si wafers have been shaped to test cylindrical and parabolic surfaces both in 1 and in 2 dimensions

Page 20: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Si wafers shaping Si wafers shaping test cylindrical samples

gold-coated, D=100-150 mm, t=0.8-1.3 mm, R=1.5 mtest cylindrical samples

gold-coated, D=100-150 mm, t=0.8-1.3 mm, R=1.5 m

Page 21: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Bent (cylinder) Si wafer R = 1650 mm, D=150 mm, t = 1.3 mm

Bent (cylinder) Si wafer R = 1650 mm, D=150 mm, t = 1.3 mm

Measuring of roughness after shaping

Measuring of roughness after shaping

Interferometer ZygoInterferometer Zygoconcave sideconcave side convex sideconvex side

Page 22: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

flat Si wafer (dopant P)D = 150 mmt = 0.625 mm

flat Si wafer (dopant P)D = 150 mmt = 0.625 mm

Measuring of shape Measuring of shape Still optical profilometer – 3D chartStill optical profilometer – 3D chart

bent Si wafer (dopant P)D = 150 mmt = 1.3 mmR = 1650 mm

bent Si wafer (dopant P)D = 150 mmt = 1.3 mmR = 1650 mm

Page 23: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Deviation bent Si wafersDeviation bent Si wafers

before processing(deviation from plane)± 2 µm

after processing(deviationfrom cylinder)± 2.5 µm

Page 24: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Parabolically shaped Si wafer, D = 150 mm, t = 0.625 mmprofile measurement in 2 perpendicular axes

Parabolically shaped Si wafer, D = 150 mm, t = 0.625 mmprofile measurement in 2 perpendicular axes

Page 25: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Measuring of shape Measuring of shape Taylor-Hobson profilometer – deviation from ideal shape

D = 150 mm, t = 0.625 mm, parabolic shapeTaylor-Hobson profilometer – deviation from ideal shape

D = 150 mm, t = 0.625 mm, parabolic shape

Except edge effects PV < 0.5 m

Page 26: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

thermally formed Si wafer to test cylinder

(R = 150 mm, 72 x 23 x 0.325 mm)

thermally formed Si wafer to test cylinder

(R = 150 mm, 72 x 23 x 0.325 mm)

Thermally formed Si wafersThermally formed Si wafers

thermally formed Si wafers to test cylinder

(R = 150 mm, 50 x 7 x 0.625 mm)

thermally formed Si wafers to test cylinder

(R = 150 mm, 50 x 7 x 0.625 mm)

Page 27: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Optimizing parameters of thermal forming of Si wafers

The effect of elastic tension on deviation from ideal surface (thermal forming of Si wafers)

Page 28: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

1. Interdisciplinary co-operation (team with 11 members from 5 Institutions) created within the Czech Republic with experienced teams including researchers at the large company producing Si wafers.

2. Si wafers successfully bent to desired geometry by 3 different techniques with PV ~ 1 m in the best case.

3. The bending before stacking is advantageous eg. to avoid increase of internal stress and to allow very long-term stability of the mirror array.

4. The production of Si wafers very complex, need to modify and optimize the parameters at the production stage.

1. Interdisciplinary co-operation (team with 11 members from 5 Institutions) created within the Czech Republic with experienced teams including researchers at the large company producing Si wafers.

2. Si wafers successfully bent to desired geometry by 3 different techniques with PV ~ 1 m in the best case.

3. The bending before stacking is advantageous eg. to avoid increase of internal stress and to allow very long-term stability of the mirror array.

4. The production of Si wafers very complex, need to modify and optimize the parameters at the production stage.

SUMMARY Si wafersSUMMARY Si wafers

Page 29: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

X-RAY OPTICS BASED

ON GLASS THERMAL

FORMING (GTF)

X-RAY OPTICS BASED

ON GLASS THERMAL

FORMING (GTF)

alternative glass technologies represent glass forming avoiding heat

alternative glass technologies represent glass forming avoiding heat

Page 30: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

optimization of the glass material (limited)

optimization of the mandrel material/design

optimization of the GTF process

optimization of the GTF temperature and duration

The parameters of the GTF may be improved by:The parameters of the GTF may be improved by:

microroughness of float - glass not degraded

~ 0.5 nm RMS

deviation PV < 0.02 m

Expectations (goals)Expectations (goals)

Page 31: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Various approaches in Glass Thermal FormingVarious approaches in Glass Thermal Forming

low-cost design needed (the goal is to produce very large number of shells at a low cost)

expensive production/material are to be avoided

the mandrel material/design is important

recent design: proprietary technology (composite)

Page 32: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Glass Thermal Forming – one of studied approaches Glass Thermal Forming –

one of studied approaches

parabolic profileparabolic profile

Page 33: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

parabolic profile100 x 150 x 0.7 mm

parabolic profile100 x 150 x 0.7 mm

Glass thermal forming (GTF)

Glass thermal forming (GTF)

cylinder profile

75 x 25 x 0.7 mm cylinder profile

75 x 25 x 0.7 mm

the largest samples so far 300 x 300 mm

Page 34: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Measuring float glass

(flat glass substrates)

used for GTF

Measuring float glass

(flat glass substrates)

used for GTF

Page 35: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

flat thin glass , 100 x 70 x 0.75 mmflat thin glass , 100 x 70 x 0.75 mm

Measuring of roughness before slumping

Measuring of roughness before slumping

Interferometer ZygoInterferometer Zygo

Page 36: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

bent glass , R = 150 mm, 75 x 25 x 0.75 mmbent glass , R = 150 mm, 75 x 25 x 0.75 mm

Measuring of roughness after sluming

Measuring of roughness after sluming

Interferometer ZygoInterferometer Zygo

Page 37: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Measuring of the roughness after slumping

Measuring of the roughness after slumping

Ra [nm]Ra

[nm]RMS[nm]RMS[nm]

Interferometer Zygo, bent glass, 75 x 25 x 0.75 mm, optimization using > 100 samples formed at different

conditions

Interferometer Zygo, bent glass, 75 x 25 x 0.75 mm, optimization using > 100 samples formed at different

conditions

minimal

value

minimal

value

Optimizing the

parameters of GTF

Page 38: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

based on TH profilometer measurements of numerous samples

(75 x 25 x 0.75 mm, R = 150 mm) - optimization

based on TH profilometer measurements of numerous samples

(75 x 25 x 0.75 mm, R = 150 mm) - optimization

Waviness of the surface as function of time and temperature of GTF

Waviness of the surface as function of time and temperature of GTF

Page 39: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

Measuring of shape Measuring of shape Still optical profilometer – 3D chartStill optical profilometer – 3D chart

thermally formed glass, parabolic profile R = 150 mm, 100 x 150 x 0.75 mm, PV from

ideal shape ~ 0.7 m in the best case recently

thermally formed glass, parabolic profile R = 150 mm, 100 x 150 x 0.75 mm, PV from

ideal shape ~ 0.7 m in the best case recently

Page 40: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

surface microroughness not degraded down to measuring accuracy ~ few 0.1 nm

profile deviations 0.7 µm (peak-valley) in the best case recently, expectations < 0.02 µm

sensitive to T and other parameters of the TGF process = need for optimization

sensitive to mandrel design / material / process => need for optimization

surface microroughness not degraded down to measuring accuracy ~ few 0.1 nm

profile deviations 0.7 µm (peak-valley) in the best case recently, expectations < 0.02 µm

sensitive to T and other parameters of the TGF process = need for optimization

sensitive to mandrel design / material / process => need for optimization

SUMMARY GTFSUMMARY GTF

Page 41: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

SUMMARYSUMMARY

Samples of test X-ray mirrors have been produced using novel technologies.

Shaped thin glass mirrors and Si mirrors have been successfully produced.

Both approaches show promising results justifying further efforts in these directions.

Samples of test X-ray mirrors have been produced using novel technologies.

Shaped thin glass mirrors and Si mirrors have been successfully produced.

Both approaches show promising results justifying further efforts in these directions.

Contact: [email protected]: [email protected]

We acknowledge collaboration with ON Semiconductor CR, Rožnov pod Radhoštěm, Optical Development Workshop of the AS CR Turnov, and TTS sro

Prague

We acknowledge collaboration with ON Semiconductor CR, Rožnov pod Radhoštěm, Optical Development Workshop of the AS CR Turnov, and TTS sro

Prague

Page 42: Astronomical Institute, Academy of Sciences of the Czech Republic, Ondřejov, Czech Republic Czech Technical University, Prague, Czech Republic Centre for

The End

The End