Bulk heterojunction perovskite solar cells based on room

temperature deposited hole-blocking layer: suppressed

hysteresis and flexible photovoltaic application

Zhiliang Chen,a Guang Yang,a Xiaolu Zheng,a Hongwei Lei,a Cong Chen,a Junjie Ma,a

Hao Wangb and Guojia Fanga,*

a Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of

China, School of Physics and Technology, Wuhan University, Wuhan 430072,

People’s Republic of China.

b School of Physics and Electronic Sciences, Hubei University, Wuhan 430062,

People’s Republic of China

E-mail: gjfang@whu.edu.cn

Table S1 Photovoltaic parameters with standard deviations extracted from 16 devices as a function of process temperature. The maximum value of each parameter is also provided below the average values.

Temperature[℃]

VOC

[V]JSC

[mA cm-2]FF PCE

[%]

251.06±0.02 21.43±0.33 0.67±0.02 15.33±0.42

1.09 21.91 0.69 15.87

501.06±0.02 21.43±0.51 0.67±0.02 15.29±0.40

1.10 21.99 0.69 15.78

1001.04±0.03 21.66±0.17 0.68±0.01 15.38±0.43

1.08 21.84 0.69 15.88

2001.05±0.03 21.31±0.55 0.68±0.02 15.18±0.52

1.10 22.32 0.71 15.93

Table S2 Photovoltaic parameters of RT-SnO2 based perovskite solar cells and RT-SnO2 based perovskite-PCBM BHJ-PSCs measured under reverse and forward voltage scanning.

type VOC

[V]JSC

[mA cm-2]FF PCE

[%]PSCs reverse 1.08 21.17 0.68 15.45

PSCs forward 1.07 20.57 0.60 13.18

BHJ-PSCs reverse 1.11 21.60 0.71 17.03

BHJ-PSCs forward 1.10 21.29 0.71 16.70

Table S3 Hall measurement data of FTO rigid substrates and ITO-PEN flexible substrates.

P/N Sheet resistance [ohm sqr-1]

Mobility[cm2 V-1 s-1]

Carrier density[cm-3]

FTO/glass (rigid) N 13 30.80 3.1x1020

ITO-PEN (flexible) N 60 6.16 3.4x1020

Fig. S1. Top-view SEM images of (a) FTO and (b) PLD-SnO2 coated FTO.

Fig. S2. X-ray diffraction spectrum of RT-SnO2 film on glass.