application note 4 njg1133md7 1.9ghz / 900mhz /1.8ghz

Application Note 4 NJG1133MD7

1／19

1.9GHz / 900MHz /1.8GHz Bands Application

4-1 Summary

The characterisitics of Band1, 8, 3 have evaluated as follows. The evaluation circuit structure and

measured data are reviewed.

4-2-1 Measurement data of assembled evaluation board

DC Characteristics

General conditions : VDD=2.85V, Ta=+25oC

LNA Supply Voltage VDD 2.85 V

Control Voltage 1 (High) VCTL1(H) 1.8 V

Control Voltage 1 (Low) VCTL1(L) 0 V





LNA Operating Current 1(1.9GHz Band High Gain Mode)

LNA Operating Current 2(900MHz Band High Gain Mode)LNA Operating Current 3

(1.8GHz Band High Gain Mode)LNA Operating Current 4(Low Gain Mode)

Control Current 1 ICTL1 VCTL1=1.8V 5.5 uA



VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

VCTL3=0V

IDD1

IDD2

IDD3

IDD4

Parameter Symbol Condition

VCTL1=0V, VCTL2=0V, VCTL3=1.8V

Units

2.57 mA

Measurement

Data

34.5

2.51

mA

mA

uA

2.27


2／19


RF Characteristics 1 (1.9GHz Band High Gain Mode)

Small Signal Gain 1Exclude Input&Output PCB, Connector

Losses (0.45dB)Gain 1 16.5 ~ 16.9 dB

Noise Figure 1Exclude PCB, Connector

Losses (0.09dB)NF 1 1.13 ~ 1.39 dB

Input Power 1dB

Compression 1P-1dB(IN)_1 -9.3 ~ -9.1 dBm

Input 3rd Order

Intercept Point 1

f1=fRF, f2=fRF+100kHz,

Pin=-30dBmIIP3_1 -1.3 ~ -0.9 dBm

RF IN VSWR 1 VSWRi_1 1.70 ~ 1.86 -

RF OUT VSWR 1 VSWRo_1 2.17 ~ 2.44 -

RF Characteristics 2 (1.9GHz Band Low Gain Mode)


Losses (0.45dB)Gain 2 -3.9 ~ -3.6 dB


Losses (0.09dB)NF 2 3.8 ~ 4.4 dB

Input Power 1dB

Compression 2P-1dB(IN)_2 +15.2 ~ +15.7 dBm

Input 3rd Order

Intercept Point 2


Pin=-20dBmIIP3_2 +12.3 ~ +12.6 dBm

RF IN VSWR 2 VSWRi_2 1.09 ~ 1.27 -


UnitsParameter Condition SymbolMeasurement

Data

Ta=+25oC, Zs=Zl=50ohm, with application circuit

Parameter SymbolCondition

General condition : VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V, fRF=1920~1980MHz,

Units


General condition : VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V, fRF=1920~1980MHz,

Measurement

Data


3／19


RF Characteristics 3 (900MHz Band High Gain Mode)


Losses (0.22dB)Gain 3 16.1 ~ 16.2 dB


Losses (0.06dB)NF 3 1.20 ~ 1.30 dB

Input Power 1dB


Input 3rd Order

Intercept Point 3


Pin=-30dBmIIP3_3 +0.6 ~ +1.3 dBm

RF IN VSWR 3 VSWRi_3 1.78 ~ 1.96 -


RF Characteristics 4 (900MHz Band Low Gain Mode)


Losses (0.22dB)Gain 4 -4.0 ~ -3.9 dB


Losses (0.06dB)NF 4 2.7 ~ 4.9 dB

Input Power 1dB


Input 3rd Order

Intercept Point 4


Pin=-20dBmIIP3_4 +11.6 ~ +13.3 dBm

RF IN VSWR 4 VSWRi_4 1.75 ~ 1.81 -


General condition : VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V, fRF=925~960MHz,

Units


General condition : VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V, fRF=925~960MHz,

Measurement

Data




Data


4／19


RF Characteristics 5 (1.8GHz Band High Gain Mode)


Losses (0.41dB)Gain 5 15.7 ~ 15.9 dB


Losses (0.10dB)NF 5 1.35 ~ 1.41 dB

Input Power 1dB


Input 3rd Order

Intercept Point 5


Pin=-30dBmIIP3_5 +1.0 ~ +1.8 dBm

RF IN VSWR 5 VSWRi_5 1.76 ~ 1.93 -


RF Characteristics 6 (1.8GHz Band Low Gain Mode)


Losses (0.41dB)Gain 6 -4.0 ~ -3.9 dB


Losses (0.10dB)NF 6 3.9 ~ 4.7 dB

Input Power 1dB


Input 3rd Order

Intercept Point 6


Pin=-16dBmIIP3_6 +13.3 ~ +14.1 dBm

RF IN VSWR 6 VSWRi_6 1.67 ~ 1.72 -


RF Characteristics 7

Gain Dynamic Range1

(1.9GHz Band)

(High Gain S21)-(Low Gain S21),

f=1920~1950MHz,

VCTL1=0V, VCTL2=0V, VCTL3=0V or 1.8V

GDR_1 20.1 ~ 20.5 dB

Gain Dynamic Range2

(900MHz Band)


f=925~960MHz,

VCTL1=1.8V, VCTL2=0V, VCTL3=0V or 1.8V

GDR_2 20.0 ~ 20.2 dB

Gain Dynamic Range3

(1.8GHz Band)


f=1805~1880MHz,

VCTL1=0V, VCTL2=1.8V, VCTL3=0V or 1.8V

GDR_3 19.6 ~ 19.8 dB

General condition : VDD=2.85V, Ta=+25oC, Zs=Zl=50ohm, with application circuit

Parameter Condition SymbolMeasurement

DataUnits

General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V, fRF=1805~1880MHz,

Units


General condition : VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V, fRF=1805~1880MHz,

Measurement

Data




Data


5／19

4-3 Pin configuration

4-4 Truth table

VCTL terminal function

VCTL1, VCTL2：Band Select (1.9GHz Band or 900MHz Band or 1.8GHz Band)

VCTL3：RX ATT Select (High Gain mode or Low Gain mode)

(Top View)

13

RFIN2

RFIN1 RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic Circuit

RFOUT3

RFIN3

RFOUT1

1.8GHz Band

Bias Circuit

Bias Circuit

Bias Circuit

GND

1.9GHz Band

900MHz Band

6

5

7

14

12

13

GND 2 4 1 3

10 8 11 9 GND GND

“L”=0～0.3V、“H”=1.36～1.9V

VCTL1 VCTL2 VCTL3

(Band Sel1) (Band Sel2) (RX ATT) LNA IDD Bypass LNA IDD Bypass LNA IDD Bypass

L L L OFF ON OFF ON OFF ONL L H ON OFF OFF OFF OFF OFFH L L OFF ON OFF ON OFF ONH L H OFF OFF ON OFF OFF OFFL H L OFF ON OFF ON OFF ONL H H OFF OFF OFF OFF ON OFFH H L OFF ON OFF ON OFF ON

H H H OFF OFF OFF OFF ON OFF

Control Voltage State

1.9GHz Band 900MHz Band 1.8GHz Band


6／19

4-5-1 Typical characteristics (1.9GHz Band High Gain Mode)

Condition: Ta=+25

oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V

0

5

10

15

20

0

2

4

6

8

-40 -30 -20 -10 0 10Gain (dB)

IDD (mA)

Pin (dBm)

Gain

IDD

Band1(1.9GHz) @High Gain

Gain, IDD vs. Pin(f=1950MHz)

P-1dB(IN)=-9.3dBm

10

11

12

13

14

15

16

17

18

1.90 1.92 1.94 1.96 1.98 2.00


OIP3, IIP3 vs. frequency(f1=1.9~2.0GHz, f2=f1+100kHz, Pin=-30dBm)

-3

-2

-1

0

1

2

3

4

5

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0

5

10

15

20

0 5 10 15 20


k factor vs. frequency(f=50MHz~20GHz)

frequency (GHz)

k factor

0

0.5

1

1.5

2

2.5

3

3.5

4

4

6

8

10

12

14

16

18

20

1.80 1.85 1.90 1.95 2.00 2.05 2.10

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain


NF, Gain vs. frequency(f=1.8~2.1GHz)

(Exclude PCB, Connector Losses)

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

Pout (dBm)

Pin (dBm)

P-1dB(IN)=-9.3dBm

Pout


Pout vs. Pin(f=1950MHz)

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3


Pout, IM3 vs. Pin(f1=1950MHz, f2=f1+100kHz)

IIP3=-1.2dBm


7／19


S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=1.8V


8／19

4-5-3 Typical characteristics (1.9GHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3

Band1(1.9GHz) @Low Gain

Pout, IM3 vs. Pin(f1=1950MHz, f2=f1+100kHz)

IIP3=+12.5dBm

6

7

8

9

10

11

12

13

14

1.9 1.92 1.94 1.96 1.98 2



7

8

9

10

11

12

13

14

15

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor

0

2

4

6

8

10

12

14

-14

-12

-10

-8

-6

-4

-2

0

1.80 1.85 1.90 1.95 2.00 2.05 2.10

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain




-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

Pout (dBm)

Pin (dBm)

P-1dB(IN)=+15.4dBm

Pout


Pout vs. Pin(f=1950MHz)

-25

-20

-15

-10

-5

0

0

20

40

60

80

100

-40 -30 -20 -10 0 10 20Gain (dB)

IDD (uA)

Pin (dBm)

Gain

IDD


Gain, IDD vs. Pin(f=1950MHz)

P-1dB(IN)=+15.4dBm


9／19


S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=0V, VCTL3=0V


10／19

4-5-5 Typical characteristics (900MHz Band High Gain Mode)

Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V

0

5

10

15

20

0

2

4

6

8

-40 -30 -20 -10 0 10Gain (dB)

IDD (mA)

Pin (dBm)

Gain

IDD

Band8(900MHz) @High Gain

Gain, IDD vs. Pin(f=942.5MHz)

P-1dB(IN)=-7.7dBm

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3


Pout, IM3 vs. Pin(f1=942.5MHz, f2=f1+100kHz)

IIP3=+0.6dBm

6

8

10

12

14

16

18

20

22

900 920 940 960 980 1000


OIP3, IIP3 vs. frequency(f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm)

-4

-2

0

2

4

6

8

10

12

frequency (MHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)

0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor

0

1

2

3

4

5

8

10

12

14

16

18

800 850 900 950 1000 1050 1100

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain


NF, Gain vs. frequency(f=800~1100MHz)


-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

Pout (dBm)

Pin (dBm)

P-1dB(IN)=-7.7dBm

Pout


Pout vs. Pin(f=942.5MHz)


11／19

4-5-6 Typical characteristics (900MHz Band High Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.7V, VCTL1=1.8V, VCTL2=0V, VCTL3=1.8V


12／19

4-5-7 Typical characteristics (900MHz Band Low Gain Mode)

Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

Pout (dBm)

Pin (dBm)

P-1dB(IN)=+17.7dBm

Pout

Band8(900MHz) @Low Gain


-25

-20

-15

-10

-5

0

-200

-100

0

100

200

300

-40 -30 -20 -10 0 10 20Gain (dB)

IDD (uA)

Pin (dBm)

Gain

IDD



P-1dB(IN)=+17.7dBm

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3



IIP3=+12.3dBm

0

2

4

6

8

10

12

14

-9

-8

-7

-6

-5

-4

-3

-2

800 850 900 950 1000 1050 1100

Noise Figure (dB)

Gain (dB)

frequency (MHz)

NF

Gain


NF, Gain vs. frequency(f=800~1100MHz)


0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor

-2

0

2

4

6

8

10

12

14

900 920 940 960 980 1000


OIP3, IIP3 vs. frequency(f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm)

6

8

10

12

14

16

18

20

22

frequency (MHz)

OIP3

OIP3 (dBm)

IIP3

IIP3 (dBm)


13／19

4-5-8 Typical characteristics (900MHz Band Low Gain Mode)

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)

Condition: Ta=+25oC, VDD=2.85V, VCTL1=1.8V, VCTL2=0V, VCTL3=0V


14／19


Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

-30

-25

-20

-15

-10

-5

0

5

10

-40 -30 -20 -10 0 10

Pout (dBm)

Pin (dBm)

P-1dB(IN)=-7.1dBm

Pout



0

5

10

15

20

0

2

4

6

8

-40 -30 -20 -10 0 10Gain (dB)

IDD (mA)

Pin (dBm)

Gain

IDD



P-1dB(IN)=-7.1dBm

-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3



IIP3=+1.4dBm

10

11

12

13

14

15

16

17

18

1.80 1.82 1.84 1.86 1.88 1.90



-2

-1

0

1

2

3

4

5

6

frequency (GHz)

OIP3

OIP3 (dBm)

IIP3 IIP3 (dBm)

0

0.5

1

1.5

2

2.5

3

3.5

4

4

6

8

10

12

14

16

18

20

1.70 1.75 1.80 1.85 1.90 1.95 2.00

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain




0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor


15／19


Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=1.8V

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)


16／19


Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

-50

-40

-30

-20

-10

0

10

20

-40 -30 -20 -10 0 10 20

Pout (dBm)

Pin (dBm)

P-1dB(IN)=+17.6dBm

Pout



-100

-80

-60

-40

-20

0

20

-40 -30 -20 -10 0 10 20

Pout, IM3 (dBm)

Pin (dBm)

Pout

IM3



IIP3=+13.5dBm

7

8

9

10

11

12

13

14

15

1.8 1.82 1.84 1.86 1.88 1.9



9

10

11

12

13

14

15

16

17

frequency (GHz)

OIP3

OIP3 (dBm) IIP3

IIP3 (dBm)

0

2

4

6

8

10

12

14

-14

-12

-10

-8

-6

-4

-2

0

1.70 1.75 1.80 1.85 1.90 1.95 2.00

Noise Figure (dB)

Gain (dB)

frequency (GHz)

NF

Gain




0

5

10

15

20

0 5 10 15 20



frequency (GHz)

k factor

-25

-20

-15

-10

-5

0

0

40

80

120

160

200

-40 -30 -20 -10 0 10 20Gain (dB)

IDD (uA)

Pin (dBm)

Gain

IDD



P-1dB(IN)=+17.6dBm


17／19


Condition: Ta=+25oC, VDD=2.85V, VCTL1=0V, VCTL2=1.8V, VCTL3=0V

S11, S22 S21, S12

VSWR Zin, Zout

S11, S22

(f=50MHz~20GHz)

S21, S12

(f=50MHz~20GHz)


18／19

4-6 Block diagram, Application circuit

Parts ID Comments

L1, L2, L4 ~ L9 MURATA (LQP03T Series)

L3 TDK (MLK0603 Series)

C1 ~ C5 MURATA (GRM03 Series)

Parts List

(Top View)

RF OUT3

(Band 3)

RF OUT2

(Band 1)

RF OUT1

(Band 8)

VCTL3=0 or 1.8V

(RX ATT)

VCTL2=0 or 1.8V

(Band Sel2)

VCTL1=0 or 1.8V

(Band Sel1)

RF IN3

(Band 3)

RF IN2

(Band 1)

RF IN1

(Band 8)

13

RFIN2

RFIN1RFOUT2

GND

VCTL2

VCTL3

VCTL1

Logic

Circuit

RFOUT3

RFIN3

RFOUT1

Band 3 (1.7GHz)

Bias

Circuit

Bias

Circuit

Bias

Circuit

GND

Band 1 (1.9GHz)

Band 8 (900MHz)

6

5

7

14

12

13

GND2 41 3

10 811 9GNDGND

L1

12nH

L2

6.8nH

L3

10nH

L4

2.9nH

L5

2.2nH

L6

2.9nH

L7

3.3nH

L8

1.1nH

L9

3.0nH

VDD=2.85V

C1

1.5pF

C2

2.0pF

C3

0.01uF

C5

0.01uF

C4

2.0pF


19／19

4-7 Evaluation board

PCB (FR-4):

t=0.2mm

MICROSTRIP LINE WIDTH=0.4mm (Z0=50ohm)

PCB SIZE=35.4mm x 17.0mm

L7

L8

L1

L2

L3L4 L5

L6L9

C1

C2C3

C4C5

RF IN3

(1.8GHz Band)

RF OUT3

(1.8GHz Band)

RF IN1

(900MHz Band)

RF OUT1

(900MHz Band)

RF IN2

(1.9GHzBand)

RF OUT2

(1.9GHz Band)

(Top View)

VCTL3 VCTL2VCTL1

VDD

VDD

CAUTION

In order not to couple with terminal RFIN and RFOUT, please layout ground

pattern under the IC.

application note 4 njg1133md7 1.9ghz / 900mhz /1.8ghz

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