andrea candelori - irradiation facilities at the infn national laboratory of legnaro – ...

Andrea Candelori - Irradiation facilities at the INFN National Laboratory of Legnaro – http://sirad.pd.infn.it

Irradiation facilities

for semiconductor detectors and electronics

at the INFN National Laboratory of Legnaro

Andrea Candelori

Istituto Nazionale di Fisica Nucleare and Dipartimento di Fisica, Padova


OUTLINE

• The SIRAD irradiation facility at the TANDEM accelerator:- high energy protons and ions.

• Total dose tests:- Tungsten (W) and Molybdenum (Mo) X-rays;- 60Co -rays.

• The CN accelerator: - protons and neutrons.


Schematics of the 15 MV Tandem Van de Graaff accelerator and of the SIRAD irradiation facility at the +70º beam line (left). A photograph of the SIRAD irradiation facility is also shown for completeness (right).

Tandem accelerator:-Van de Graaff type; 15 MV maximum voltage; two strippers;-servicing 3 experimental halls for nuclear and interdisciplinary Physics;

The SIRAD irradiation facility is located at the Tandem accelerator of the INFN National Laboratory of Legnaro (Padova, Italy).

The SIRAD Irradiation Facility


Typical ion species available at SIRAD

The energy values refer to the most probable q1 and q2 charge state,

with two stripper stations, and the Tandem operating at 14 MV.

• Ion species from 1H (22-30 MeV) up to 197Au (1.4 MeV/a.m.u.)

• LET from 0.02 MeVcm2/mg (1H) up to 81.7 MeVcm2/mg (197Au)

Ion Species Energy (MeV)

q1 q2 Range in Si (m)

Surface LET in Si (MeVcm2/mg)

1H 28 1 1 4390 0.02 7Li 56 3 3 378 0.37 11B 80 4 5 195 1.01 12C 94 5 6 171 1.49 16O 108 6 7 109 2.85 19F 122 7 8 99.3 3.67 28Si 157 8 11 61.5 8.59 32S 171 9 12 54.4 10.1

35Cl 171 9 12 49.1 12.5 48Ti 196 10 14 39.3 19.8 51V 196 10 14 37.1 21.4 58Ni 220 11 16 33.7 28.4 63Cu 220 11 16 33.0 30.5 74Ge 231 11 17 31.8 35.1 79Br 241 11 18 31.3 38.6

107Ag 266 12 20 27.6 54.7 127I 276 12 21 27.9 61.8

197Au 275 13 26 23.4 81.7

1st multi-source

2nd multi-source


Low flux (102-105 ions/cm2s) irradiation set-up on 22 cm2

The on-line beam monitoring system for defocused beams by the fixed and mobile diodes:-left: side view of the experimental set-up;-right: front view (transverse to the beam) of the fixed and mobile diode boards.The mobile diodes are mounted on the sample holder with the DUT. The figure is not drawn to scale.

M o b ile d io d e b o a rd

F ix ed d io d e b o a rd

G e o m e tric ap e rtu re 2 x 2 cm 2

5 c m 2 c m

Ir rad ia tio n c h am b e r

D efo cu sed 1 n Aio n b ea m

S am p le h o ld e r5 x 5 c m 2ap e rtu re

D e v ices fo r S E E te s tsF ix ed d io d es

M o b ile d io d e s


High flux (>108-109 ions/cm2s) irradiation set-up on 55 cm2

The on-line beam monitoring for rastered proton and ion beams by the 33 battery of Faraday cups positioned behind the DUT: side view of the experimental setup. The aperture of each Faraday cup is 0.60.6 cm2. The figure is not drawn to scale.

Ir rad ia tio n C h am b e r

F o c u se d a n d ra ste re dIo n o r p ro to n b ea m

S q u a re 3 x 3F a r a d a y c u p b a tteryS am p le h o ld e r

5 cm

5 x 5 c m 2ap e rtu re

D e v ic e u n d e r te s t

R R in

I= V /(R ||R in )

MULTIMETER


Validation of the ASIC for the GLAST Large Area Telescope

• GLAST space telescope• International collaboration (NASA, ESA, ASI, INFN,...)• INFN Padova: radiation tests of tracker, DAQ electronics• ASICs validated for SEE at SIRAD• ASICs validated for TD at CNR-ISOF 60Co -ray source• COTS validated for SEE at SIRAD

Example of validation for space mission


Summary of the main research activities at SIRAD

More than 61 papers published in the last 4 years.

SEE in ASICs for CMS, GLAST, AGILE, ALICE Charge loss in Flash E2PROMSEE in FPGA

SEB, SEGR in power MOSFETs

1

10

100

1000

10000

100000

4 5 6 7 8VTH (V)

Num

ber

of c

ells

LET (MeV cm2/mg)6040200 80

De

vice

Cro

ss S

ect

ion

(cm

2 )

10-6

10-4

10-1

10-8

10-7

10-5

10-3

10-2

Weibull fit

small design

large design

LET (MeV cm2/mg)6040200 80

LET (MeV cm2/mg)6040200 80

De

vice

Cro

ss S

ect

ion

(cm

2 )

10-6

10-4

10-1

10-8

10-7

10-5

10-3

10-2

Weibull fit

small design

large design

RILC and RSB (Ultra-thin gate oxide) Silicon detectors

0 3·1013 6·1013 9·1013 12·1013

(27 MeV p/cm2)

MSTD =(50.6 2.6)·10-3 cm-1

MOXY =(17.1 1.1)·10-3 cm-1

STSTD =(29.7 3.0)·10-3 cm-1

STOXY,30h =(17.0 1.9)·10-3 cm-1

6·1012

0

1·1012

2·1012

3·1012

4·1012

5·1012

|Nef

f|(c

m-3

)


Beam time allocation at SIRAD in 2004

6) Nanomembranes2%

1) CMOS and Bipolar technologies

12%

5c) SEEin ASIC and COTS

11%

4) SEB and SEGRin power MOSFETs

36%

5b) SEEin FPGA

11%

5a) SEE in SDRAM and Flash memories

12%

2) Bulk damagein silicon detectors

6%

3) IEEM 11%

January 2004- December 2004 (432 hours, 18 days)


Beam time allocation at SIRAD in 2001-2004

6) Others1%

1) CMOS and Bipolar technologies

7%5c) SEEin ASIC and COTS

21%

4) SEB and SEGRin power devices

28%

5b) SEEin FPGA

14%

5a) SEE in Memories7%

2) Bulk damagein silicon detectors

12%

3) Secondary Electron Emission and IEEM

10%

January 2001- December 2004 (2179 hours, 91 days)


SIRAD Collaboration in Italy and abroad

1) Dip. di Fisica and INFN Padova2) INFN Laboratori Nazionali di Legnaro3) Dip. Ingegneria dell’Informazione, Padova4) Tecnomare SpA (Venezia)5) Center for Advance Space Optics (Trieste)6) Dip. Fisica and INFN, Trieste7) ITC-IRST (Trento)8) Dip. Informatica e Telecomunicazioni, Trento9) INAF, Sezione di Milano10)ST Microelectronics (Agrate Brianza, Milano)11) Dip. Elettronica, Pavia12) Dip. Ingegneria Industriale, Bergamo13) Dipartimento di Fisica Sperimentale, Torino14) Dip. Automatica e Informatica,Politecnico di Torino15) Dip Fisica and INFN, Bologna16) Dip. Energetica and INFN, Firenze17) Aurelia Microelettronica S.p.A. (Viareggio)18) Dip.Ingegneria Elettronica, Università Roma 219) INAF, Sezione di Roma20) DAEIMI e DSM, Università di Cassino21) ST Microelectronics (Catania)

A) Institut für Experimentalphysik (Amburgo, Germania)B) LETI (Grenoble, Francia)C) Centro Nacional de Microelectronica (Barcellona, Spagna)D) IMEC (Lovanio, Belgio)E) Philips Semiconductor (Nijmegen, Olanda)F) CERN (Ginevra, Svizzera)G) Helsinki Institute of Physics (Finland)H) Santa Cruz Institute for Particle Physica (California, U.S.A)

CASSINO

VIAREGGIO

PADOVAPAVIA

BERGAMO


CN accelerator

Characteristics: Van de Graaff type, 7 MV maximum voltage;Ion species: p (1H); d (2H); t (3H); 4He (single or double charge) and 15N (double charge)Max energy: 7 MeV for single charged species;14 MeV for 4He++; 8 MeV for 15N++.

T(d,n)4He

9Be(d,n)10Bwith moderator

D(d,n)3He7Li(p,n)7Be9Be(d,n)10B


CN accelerator: neutron beams

Table II Neutron sources at the CN accelerator

Formula

Ebeam (MeV)

Imax (nA)

Spectra

Eneutrons at 0 (MeV)

Reference

D(d,n)3He 2-7 100 Monochromatic 5-10 Rev. Mod. Phys. (1956) 103-134 T(d,n)4He 2-7 100 Monochromatic 18-24 Rev. Mod. Phys. (1956) 103-134

7Li(p,n)7Be 2-7 500 Monochromatic 0.2-5 NIM A 238 (1985) 443-452 9Be(d,n)10B 2.6-7 300 Continuos 0.06-11.4 NIM A324 (1993) 239-246 9Be(d,n)10B

with moderator 2.6-7 300 Thermal <0.410-6 NIM A489 (2002) 347-369


W and Mo X-rays: Seifert Rp-149 Irradiation Facility

• Tube with W (7.4-12.06 keV L-lines) or Mo (17.4-19.6 keV K-lines) anode.

• Maximum tube voltage 60 kV. Maximum tube current 50 mA.

• X,Y (motorized) and Z (manual) axis for accurate position setting of the tube.

• Radiation hardness qualification of the APV25 chip for the CMS silicon tracker.

X-ray tube

Semi-automaticprobestation

Laser pointer Y axis motor

XY

Z


W and Mo X-rays: radiation field dimensions

X position (mm)

0

20

40

60

80

100

120

140

-20 -15 -10 -5 0 5 10 15 20

Dos

e ra

te (

rad(

Si)

/s)

D=10 cmD=15 cmD=20 cmD=40 cm 13.9 mm

15.5 mm

16.1 mm

20.6 mm

Y position (mm)

0

20

40

60

80

100

120

140

-20 -15 -10 -5 0 5 10 15 20

Dos

e ra

te (

rad(

Si)

/s)

D=10 cmD=15 cmD=20 cmD=40 cm 7.2 mm

9.2 mm

11.4 mm

19.4 mm


60Co -ray source (CNR-ISOF)

• Irradiation Facility: Panoramic Gammabeam model 150 A produced by Nordion Ltd (Canada)• Photon energies: 1.165 MeV and 1.332 MeV• Present activity: 2000 Ci ( 7.41013 Bq)• Point source for D>10 cm (D=10-300 cm)• Dose rate: ~5 rad(Si)/s at D=20 cm, ~1 rad(Si)/s at D=45 cm


Conclusions

• The SIRAD irradiation facility at the 15 MV TANDEM accelerator:- Ion species from 1H (23-30 MeV) up to 197Au (1.4 MeV/a.m.u.)- LET from 0.02 MeVcm2/mg up to 81.7 MeVcm2/mg- High (>108-109 ions/cm2s) and low (102-106 ions/cm2s) flux set-up- Ion Electron Emission Microscopy possibility- New irradiation chamber and sample holder (ESA standards)

• Total dose tests:- X-rays: W (L-lines at 7-12 keV) and Mo (K-lines at 17-20 keV) anode;

dose rate: 120 rad(Si)/s. - -rays: 60Co with 1-5 rad(Si)/s dose rate (D=20-45 cm).

• The CN accelerator:- Monochromatic spectra: D(d,n)3He, T(d,n)4He, 7Li(p,n)7Be- Continuous spectra: 9Be(d,n)10B- Thermal neutrons: 9Be(d,n)10B with moderator


Scuola Nazionale“Rivelatori ed elettronica per applicazioni

spaziali, Astrofisica e Fisica delle Alte Energie”

INFN Laboratori Nazionali di Legnaro4-8 Aprile 2005

More information on the web sitehttp://sirad.pd.infn.it/scuola_legnaro


What is SIRAD?

SIRAD is the acronym for SIlicon and RADiation.

The SIRAD irradiation facility is dedicated:"to investigate radiation effects

on silicon detectors, electronic devices and systems in radiation hostile environments".

-Total dose effects as a result of ionization damage. -Bulk effects as a result of displacement damage. -Single event effects as a result of an energetic particle strike.

-High energy physics experiments.-Space missions of scientific and commercial satellites.


SIRAD upgrade: the Ion Electron Emission Microscope (IEEM)

(Xbeam,Ybeam)

target

analysis ofsignal

Ion beam 2D electron detector atfocal plane ofelectron optics

target

(Xhit,Yhit)

secondary electrons

electronoptics

Ion beam

coating

analysis ofsignal

Resolution on target: lateral size of field of view divided by linear line pair resolution of sensor.

rastering pattern

Object slit

Resolution on target determined by beam optics spot size and positioning.

channeltronhit confirmation bysecondary electrons

Nuclear Microprobe: magnet optics for

focusing (e.g. triplet)and electron optics for

scanning

Nuclear Microprobe: µ-focused beam IEEM: defocused beam (Sandia)

Purpose: Single Event Effect mapping, Ion Beam Induced Charge Collection studies.


SIRAD upgrade: the Ion Electron Emission Microscope (IEEM)

The ion impact position on the target is determined by “imaging” the position from which secondary electrons are emitted: the intrinsic resolution

is of the order of 0.6 m over a 250 m field of view.

SIRAD

II

contrast diaphragm

PSD

lens

Image intensifier

UV lamp (PEEM)


IEEM images with UV lamp and ion beam

• Lattice step: 40 m• Structure width is about 6 m.• The lattice is made by copper.

UV lamp 223 MeV Br ion beam


W and Mo X-rays: emission spectra

0.0

0.2

0.4

0.6

0.8

1.0

0 5 10 15 20 25 30 35 40 45 50

Photon energy (keV)

Pho

tons

/(m

A

sm

m2 )

at 7

50 m

mno

rmal

ized

to m

axim

um

W anode, 50kV, 0.1 mm Al filtration

Mo anode 30 kV, 0.1 mm Mo filtration

17.4 keV

19.6 keV

7.6-12.06 keV

W

Mo

andrea candelori - irradiation facilities at the infn national laboratory of legnaro – ...

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