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Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 1 of 11 April, 2004
WESTCODEAn IXYS Company
Date:- 13 Apr, 2004
Data Sheet Issue:- 1
Fast Recovery DiodeType M1010NC400 to M1010NC450
Old Type No.: SM30-45CXC604
Absolute Maximum Ratings
VOLTAGE RATINGS MAXIMUMLIMITS UNITS
VRRM Repetitive peak reverse voltage, (note 1) 4000-4500 VVRSM Non-repetitive peak reverse voltage, (note 1) 4100-4600 V
OTHER RATINGS MAXIMUMLIMITS UNITS
IF(AV)M Maximum average forward current, Tsink=55°C, (note 2) 1010 A
IF(AV)M Maximum average forward current. Tsink=100°C, (note 2) 668 A
IF(AV)M Maximum average forward. Tsink=100°C, (note 3) 413 A
IF(RMS) Nominal RMS forward current, Tsink=25°C, (note 2) 1880 A
If(d.c.) D.C. forward current, Tsink=25°C, (note 4) 1664 A
IFSM Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 5) 9600 A
IFSM2 Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) 10560 A
I2t I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 5) 461×103 A2s
I2t I2t capacity for fusing tp=10ms, VRM≤10V, (note 5) 558×103 A2s
Tj op Operating temperature range -40 to +150 °C
Tstg Storage temperature range -40 to +150 °C
Notes:-1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.2) Double side cooled, single phase; 50Hz, 180° half-sinewave.3) Single side cooled, single phase; 50Hz, 180° half-sinewave.4) Double side cooled.5) Half-sinewave, 150°C Tj initial.
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 2 of 11 April, 2004
Characteristics
PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS
- - 3.25 IFM=1500AVFM Maximum peak forward voltage
- - 3.7 IFM=2020AV
VT0 Threshold voltage - - 1.70 V
rT Slope resistance - - 1.03 mΩ
- - 65 di/dt = 1000A/µs, Tj=25°CVFRM Maximum forward recovery voltage
- - 160 di/dt = 1000A/µsV
IRRM Peak reverse current - - 150 Rated VRRM mA
Qrr Recovered charge - 1450 - µC
Qra Recovered charge, 50% Chord - 700 950 µC
Irm Reverse recovery current - 440 - A
trr Reverse recovery time, 50% Chord - 3.2 -
IFM=1000A, tp=500µs, di/dt=200A/µs,Vr=50V, 50% Chord.
µs
- - 0.022 Double side cooledRthJK Thermal resistance, junction to heatsink
- - 0.044 Single side cooledK/W
F Mounting force 19 - 26 kN
Wt Weight - 510 - g
Notes:-1) Unless otherwise indicated Tj=150°C.2) For other clamp forces, please consult factory.
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 3 of 11 April, 2004
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade VRRM(V)
VRSM(V)
VR dc(V)
40 4000 4100 200042 4200 4300 204044 4400 4500 208045 4500 4600 3000
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients ofthe expression for the forward characteristic given below:
FFFF IDICIBAV ⋅+⋅+⋅+= )ln(
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150µs integration time.
I.e. ∫=s
rrrr dtiQµ150
0
.
(iii)2
1 ttFactorK =
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 4 of 11 April, 2004
[ ]thJKMAXJSINK RfkETT ⋅+⋅−= )(
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reversevoltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluatedfrom:
Where k = 0.2314 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)f = Rated frequency in Hz at the original sink temperature.
RthJK = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
fEWW originaltot ⋅+= )()(
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring thecharge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of highamplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscopeto avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate criticallydamped snubber, connected across diode anode to cathode. The formula used for the calculation of thissnubber is shown below:
dtdi
S
r
CVR⋅
⋅= 42
Where: Vr = Commutating source voltageCS = Snubber capacitanceR = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubbercapacitor or excessively small values of snubber resistor. Such excessive component values may lead todevice damage due to the large resultant values of snubber discharge current. If required, please consultthe factory for assistance.
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 5 of 11 April, 2004
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
T
AVTTTAV rff
WrffVVI
⋅⋅⋅⋅⋅++−
= 2
200
24
Where VT0 =1.7V, rT = 1.03mΩ
ff = form factor (normally unity for fast diode applications)
KMAXj
thAV
TTTRTW
−=∆
∆=
)(
7.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on page 6 is represented in two ways;(i) the well established VT0 and rT tangent used for rating purposes and((iiii)) a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in
terms of IF given below:
FFFF IDICIBAV ⋅+⋅+⋅+= )ln(
The constants, derived by curve fitting software, are given in this report for both hot and coldcharacteristics. The resulting values for VF agree with the true device characteristic over a current range,which is limited to that plotted.
25°C Coefficients 150°C CoefficientsA 0.12244226 0.48090081
B 0.3167849 0.08739151
C 5.562×10-4 3.69724×10-4
D 9.6916×10-4 0.04067666
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratingsshown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included asparallel to the first.
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types
Curves
Figure 1 – Forward characteristics of Limit device Figure 2 – Maximum forward recovery voltage
100
1000
10000
0.5 2.5 4.5 6.5 8.5Maximum instantaneous forward voltage - VFM (V)
Inst
anta
neou
s fo
rwar
d cu
rren
t - I F
M (A
)
150°C25°C
1
10
100
1000
100 1000 10000Rate of rise of forward current - di/dt (A/µs)
Max
imum
forw
ard
reco
very
vol
tage
- V
FRM (V
)
150°C
25°C
Figure 3 - Recovered charge, Qrr Figure 4 - Recovered charge, Qra (50% chord)
100
1000
10000
1
Tota
l rec
over
ed c
harg
e - Q
rr (µ
C)
10000
M1010NC400-450Issue 1
M M
M
1010NC400-450Issue 1
M1010NC400 to M1010NC450 Issue 1 Page 6 of 11
10 100 1000Commutation rate - di/dt (A/µs)
Tj = 150°C
2000A1500A1000A500A
10
100
1000
1
Rec
over
ed c
harg
e - Q
ra (µ
C)
1010NC400-450Issue 1
1010NC400-450Issue 1
April, 2004
10 100 1000Commutation rate - di/dt (A/µs)
Tj = 150°C
2000A1500A1000A500A
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 7 of 11
Figure 5 - Maximum reverse current, Irm Figure 6 - Maximum recovery time, trr (50% chord)
10
100
1000
1 10 100 1000Commutation rate - di/dt (A/µs)
Rev
erse
reco
very
cur
rent
- I rm
(A)
2000A1500A1000A500A
Tj = 150°C
1
10
100
1
Rec
over
y tim
e - t
rr (µ
s)
T
Figure 7 – Reverse recovery energy per pulse Figure 8 -
0.1
1
10
1 10 100 1000Commmutation rate - di/dt (A/µs)
Ener
gy p
er p
ulse
- E r
(J)
Tj = 150°CVr=67%VRRM
2000A1500A1000A500A
0.5µF, 2.2Ω Snubber
1.00E
1.00E+
1.00E+
1.00E+
1.00E+
Ener
gy p
er p
ulse
(J)
M
M
M
1010NC400-450Issue 110 100 1000Commutation rate - di/dt (A/µs)
j = 150°C
2000A1500A1000A500A
Sine wave energy per pulse03
1010NC400-450Issue 1
-01
00
01
02
1.00E
M1010NC400-450Issue 1
1010NC400-450Issue 1
April, 2004
-05 1.00E-04 1.00E-03 1.00E-02Pulse width (s)
Tj = 150°C
4000A3000A2000A1000A
500A
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Is
Figure 9 - Sine wave frequency vs. pulse width Figure 10 - Sine wave frequency vs. pulse width
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E-05 1.00E-04 1.00E-03 1.00E-02Pulse width (s)
Freq
uenc
y (H
z)
100% Duty Cycle
3kA
2kA
TK = 55°C
1kA
500A
4kA
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E-05 1.00E-04 1.00E-03 1.00E-02Pulse width (s)
Freq
uenc
y (H
z)
1kA
4kA
2kA
100% Duty Cycle
TK = 85°C
3kA
500A
Figure 11 - Square wave energy per pulse Figure 12 - Square wave energy per pulse
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E-05 1.00E-04 1.00EPulse width (s)
Freq
uenc
y (H
z)
100% D
3kA
2kA
1kA
4kA
500A
1.00E+05M
1010NC400-450Issue 1
sue 1 Page 8 of 11
-03 1.00E-02
uty Cycle
TK=55°Cdi/dt =100A/µs
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E-05 1.00E-04 1.00Pulse width (s)
Freq
uenc
y (H
z)
100% Duty 500A
3kA
1kA
2kA
4kA
M1010NC400-450Issue 1
E
M1010NC400-450Issue 1
M1010NC400-450Issue 1
April, 2004
-03 1.00E-02
Cycle
di/dt =500A/µs
TK = 55°C
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issu
Figure 13 - Square wave frequency vs. pulse width Figure 14 - Square wave frequency vs. pulse width
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E+05
1.00E-05 1.00E-04 1.00EPulse width (s)
Freq
uenc
y (H
z)
1kA
4kA
500A
2kA
3kA
10
1.00E+05
Figure 15 - Square wave frequency
1.00E-01
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E-05 1.00E-04 1.00Pulse width (s)
Ener
gy p
er p
ulse
(J)
500A
4kA
3kA
di/dt =100A/µsTj = 150°C
2kA
1kA
M
Issue 1
1010NC400-450Issue 1
e 1 Page 9 of 11
-03 1.00E-02
0% Duty Cycle
di/dt =100A/µsTK = 85°C
1.00E+01
1.00E+02
1.00E+03
1.00E+04
1.00E-05 1.00E-04 1.00Pulse width (s)
Freq
uenc
y (H
z)
500A
2kA
3kA
1
1kA
4kA
vs. pulse width Figure 16 - Square wave frequency
E-03 1.00E-021.00E-01
1.00E+00
1.00E+01
1.00E+02
1.00E+03
1.00E-05 1.00E-04 1.00Pulse width (s)
Ener
gy p
er p
ulse
(J)
di/dt =500A/µsTj = 150°C
4kA3kA2kA1kA
500A
M
M1010NC400-450Issue 1
E-03 1.00E-02
00% Duty Cycle
di/dt =500A/µsTK = 85°C
vs. pulse width
M1010NC400-450
1010NC400-450Issue 1April, 2004
E-03 1.00E-02
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Type
Figure 17 – Maximum surge and I2t ratings
1000
10000
100000
Tota
l pea
k ha
lf si
ne s
urge
cur
rent
- I F
SM (A
)
1.00E+07
1
Figure 18 – Tran
0.0001
0.001
0.01
0.1
0.00
Ther
mal
impe
danc
e (K
/W)
M1010NC400-450Issue 1
s M1010NC400 to M1010NC450 Issue 1 Page 10 of 11 April, 2004
1.00E+05
1.00E+06
Max
imum
I2 t (A
2 s)
3 5 10 1 5 10 50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I2t: VRRM≤10VTj (initial) = 150°C
IFSM: VRRM≤10V
IFSM: VR=60% VRRM
I2t: VR=60% VRRM
sient thermal impedance
01 0.001 0.01 0.1 1 10 100
Time (s)
SSC 0.044K/W
DSC 0.022K/W
M1010NC400-450Issue 1
WESTCODEWESTCODEWESTCODEWESTCODE An IXYS Company Fast Recovery Diode Types M1010NC400 to M1010NC450
Data Sheet. Types M1010NC400 to M1010NC450 Issue 1 Page 11 of 11 April, 2004
Outline Drawing & Ordering Information
ORDERING INFORMATION (Please quote 10 digit code as below)
M1010 NC 0
FixedType Code
Fixedoutline code
Voltage codeVDRM/100
40-45Fixed code
Order code: M1010NC420 – 4200V VRRM, 27.7mm clamp height capsule.
WESTCODEIXYS Semiconductor GmbHEdisonstraße 15D-68623 LampertheimTel: +49 6206 503-0Fax: +49 6206 503-627E-mail: marcom@ixys.de An IXYS Company
Westcode Semiconductors LtdLangley Park Way, Langley Park,
Chippenham, Wiltshire SN15 1GE.Tel: +44 (0)1249 444524Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode.com
IXYS Corporation3540 Bassett StreetSanta Clara CA 95054 USATel: +1 (408) 982 0700Fax: +1 (408) 496 0670E-mail: sales@ixys.net
www.westcode.com
www.ixys.com
Westcode Semiconductors Inc3270 Cherry Avenue
Long Beach CA 90807 USATel: +1 (562) 595 6971Fax: +1 (562) 595 8182
E-mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used ordisclosed except with the written permission of and in the manner permitted by the proprietors Westcode SemiconductorsLtd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without priornotice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subjectto the conditions and limits contained in this report.
© Westcode Semiconductors Ltd.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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