pnpi r&d of the detectors for much e. chernyshova, v.evseev, v. ivanov, a. khanzadeev, b....
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PNPI R&D of the detectors for MUCH
E. Chernyshova, V.Evseev, V. Ivanov, A. Khanzadeev, B. Komkov, L. Kudin, V.Nikulin, G. Rybakov, E. Rostchin, V.Samsonov,
O.Tarasenkova, S. Volkov
A.Khanzadeev_GSI_April 2010
This year our main R&D activity – assembling and testing two prototypes with radioactive sources. One of them – Double TGEM, another one – hybrid MICROMEGAS/GEM
Anode structure2048 pads with hidden contact holesPad size 1.5x 3 mm2
Working area 102x109 mm2
Gap between pads 0.2 mmPreamp to take signals from mesh or TGEM
A.Khanzadeev_GSI_April 2010
TGEM1
TGEM1
Resolution
0
10
20
30
40
50
60
70
80
1040 1060 1080 1100 1120 1140
dVg
fwh
m %
GG vs. ΔVg (ΔVag=0.28kV, ΔVgc=0.1kV – fixed)
Thickness – 0.53 mm, distance between holes – 1.6 mm, hole diam. – o.5 mm, rim diam. – 0.72 mm
Ar/CO2/iC4H10 (90/8/2)
TGEM1
A.Khanzadeev_GSI_April 2010
TGEM 1
resolution
0
10
20
30
40
50
60
70
80
0 50 100 150 200 250 300 350
Vc
fwh
m %
GG vs. ΔVgc (ΔVg=1.1kV,ΔVag=0.7kV – fixed)
GG vs. ΔVag (ΔVg=1.11kV,
ΔVgc=0.1kV – fixed)
A.Khanzadeev_GSI_April 2010
For TGEM1 we can reach Gas Gain up to 12∙103 and energy resolution ~40% without visible problems
Ar/CO2/iC4H10 (90/8/2)
TGEM2
resolution
0
10
20
30
40
50
60
70
80
1290 1300 1310 1320 1330 1340 1350 1360
Vg
fwh
m %
ΔVag=0.6kV,
ΔVgc=0.2kV– fixed
A.Khanzadeev_GSI_April 2010
Thickness – 0.95 mm, distance between holes – 1.6 mm, hole diam. – 0.6 mm, rim diam. – 0.79 mm
GG vs. ΔVag (ΔVg=1.3kV,
ΔVgc=0.1kV – fixed)The same as for TGEM1 for TGEM2 we can reach Gas Gain up to 12∙103 and energy resolution fwhm~40% without visible problems
Ar/CO2/iC4H10 (90/8/2)
TGEM2
Double TGEM1/TGEM2
resolution
0
10
20
30
40
50
60
70
80
0 100 200 300 400 500
Vggfw
hm
%
GG vs. ΔVg1g2 (ΔVag=500V, ΔVg1=800V, ΔVg2=1100V, ΔVcg=50V – fixed)
Ar/CO2/iC4H10 (90/8/2)
For double TGEM1/TGEM2 we can reach Gas Gain up to 30∙103 and energy resolution ~35% without visible problems
1.0 mm
0.5 mm
A.Khanzadeev_GSI_April 2010
The best energy resolution reached – 30% (fwhm)
Double TGEM1/TGEM2 He/CF4/iC4H10 (75/23/2)
GG vs. Δ Vg1 (ΔVag1=450V, ΔVg1g2=30V, ΔVg2= ΔVgc=0V)
800 850 900 950 1000 850 900 950 1000
GG vs. Δ Vg2 (ΔVg1=750V, ΔVg1g2=450V, ΔVag1=450V, ΔVgc=50V
During the test with 55Fe double TGEM detector showed stable behaviour. Operation of the detector with He based gas mixture allows soft HV regime to get supposed for MUCH electronics value of GG=2∙104
A.Khanzadeev_GSI_April 2010
Drawback – to have good collection of primary electrons (shape and resolution of the 55Fe spectrum are indicators) from cathode-GEM2 gap it was necessary to keep low voltage (about 50 volts per 4 mm). So, in this case we have huge charge collection time. Reason for that is large distance between holes.
To solve this problem we have produced new TGEMs having smaller distance between holes.
A.Khanzadeev_GSI_April 2010
Double TGEM1/TGEM2 (new TGEMs)
Ar/CO2/iC4H10 (90/8/2)
GG vs. ΔVg1&ΔVg2 (ΔVg1=ΔVg2) (ΔVag=300V, ΔVg1g2=300V, ΔVcg=800V)
GG
x10
3
TGEM1, TGEM2 are identical:
thickness – 0.53 mm
step between holes – 1 mm
hole diam.– 0.6 mm
rim diam.- 0.74 mm
volts
Res
olu
tio
n, %
ΔVg, volts
A.Khanzadeev_GSI_April 2010
For new double TGEM1/TGEM2 we can reach Gas Gain up to 30∙103 and energy resolution fwhm ~30% without visible problems
Gaps:
Anode-G1 – 1.5mm
G1-G2 – 1.5 mm
Cathode-G2 – 4 mm
Ar/CO2/iC4H10 (90/8/2)
A.Khanzadeev_GSI_April 2010
2
3
4
5
6
7
8
9
200 250 300 350 400 450
0
2
4
6
8
10
100 150 200 250 300 350 400 450
Double TGEM1/TGEM2 (new TGEMs)
Gas gainX103
volts
Gas gainX103
Gas gainX103
2
3
4
5
6
7
8
200 300 400 500 600 700 800 900volts
GG vs. ΔVgc
(Δ Vg1= Δ Vg2=800V, ΔVag1=300V,ΔVg1g2=300V)
GG vs. ΔVag1
(ΔVg1=ΔVg2=800V, ΔVg1g2=300V
ΔVgc=800V )
GG vs. ΔVg1g2
(Δ Vg1= Δ Vg2=800V, ΔVag1=300V,ΔVag1=300V)
volts
Sensitivity to changing HV at different gaps
Double TGEM1/TGEM2 (new TGEMs)
A.Khanzadeev_GSI_April 2010
volts
Gas
gai
n X
103
GG vs. ΔVg1&ΔVg2 (ΔVg1=ΔVg2) (ΔVag=300V, ΔVg1g2=300V, ΔVcg=800V – fixed)
He/CF4/iC4H10 (75/23/2)
During the test with 55Fe double TGEM detector showed stable behaviour. Operation of the detector with He based gas mixture allows soft HV regime to get supposed for MUCH electronics value of GG=2∙104
Micromegas/GEM
Energy resolution fwhm~36%
3.7 mm
2.6 mm
60 mcm
Ar/CO2/iC4H10 (90/8/2)
GEM – produced by CERN PCB has hidden contact holes
GG vs. Vm&ΔVg (Vm=ΔVg) (ΔVmg=100V and 250V, ΔVcg=350V – fixed)
Easy to get GG ~4∙105
We are taking signals from the mesh
A.Khanzadeev_GSI_April 2010
GG vs. ΔVmg (Vm=300V, ΔVg=300V, ΔVcg=350V – fixed)
Micromegas/GEM
GG vs. ΔVcg(Vm=ΔVg=300V, ΔVmg=250V – fixed)
GG vs. Vm(ΔVg=320V, ΔVmg=300V, ΔVcg=400V – fixed)
GG vs. ΔVg (Vm=300V, ΔVmg=300V, ΔVcg=400V – fixed)
Sensitivity to changing HV at different gaps
Ar/CO2/iC4H10 (90/8/2)
A.Khanzadeev_GSI_April 2010
He/CF4/iC4H10 (75/23/2)Micromegas/GEM
GG vs. Vm(ΔVmg=50V, ΔVg=ΔVcg=0V – fixed)
GG vs. ΔVg (Vm=400V, ΔVmg=260V, ΔVcg=400V – fixed)
GG vs. Vm&ΔVg (Vm=ΔVg) (ΔVmg=260V, ΔVcg=400V – fixed)
During the test with 55Fe Micromegas/GEM detector showed stable behaviour. Operation of the detector with He based gas mixture allows very soft HV regime to get supposed for MUCH electronics value of GG=2∙104. It is enough to keep 320-330 volts on Gem and 320-330 volts on Micromegas
A.Khanzadeev_GSI_April 2010
Easy to get GG ~4∙105
Important remark
Technology for production of PCB, hidden contacts to pads from connector side, and production of TGEM are well suited to industrial technology
Plan for 2010
■ Get NXYTER cards from GSI
■ Adjust GSI cards to prototype connectors
■ Understand how to work with NXYTER
■ Make tests with radioactive sources
■ Deliver prototypes to GSI
■ August/September – beam test in GSI
A.Khanzadeev_GSI_April 2010
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