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Optical Navigation Division
Transceivers and semiconductor lasers for photonic networks
12/06/2007
Michele AgrestiMichele Agresti
TTCTTC-- Avago Technologies ItalyAvago Technologies Italy
Torino, ITALYTorino, ITALY
Avago Technologies ConfidentialPresentation title herePage 2
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OutlineCompany overview
Laser sources for pluggable transceiver world
Avago Technologies ConfidentialPresentation title herePage 3
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Company Overview
Field/Order FulfillmentR&D FacilitiesManufacturingR&D and Manufacturing
Leading global manufacturer of analog, mixed signal and optoelectronics components
Headquarters: San Jose, California and Singapore
6,500 employees service over 40,000 customers worldwide
Over 1,000 analog designers with 2,000 patents and patent applications
Global presence in North America, Europe and Asia
Avago Technologies ConfidentialPresentation title herePage 4
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Recent story from HP to Agilent…and Avago
March 2, 1999HP announces creation of two independent companies
July 28, 1999Agilent’s name is introduced
November 18, 1999Agilent’s IPO takes place
June 2, 2000Agilent becomes fully independent
November 1, 1999Agilent starts operating as an independent company
Agilent
April 2000
TTC acquisition
1 December 2005
DAY 1Avago Technologies
Avago Technologies ConfidentialPresentation title herePage 5
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Company’s History� Avago Technologies dates back to the earliest days of Hewlett-Packard, the
component group in HP that developed technically differentiated components needed by HP’s systems
� In 1999, the group spun off from HP as the second largest business group of Agilent Technologies – named Semiconductor Products Group (SPG)
� In 2005, was acquired by Kohlberg Kravis Roberts & Co. (KKR) and Silver Lake Partners to become the world’s largest private owned semiconductor company
� Avago Technologies has a rich heritage in RF, mixed signal and optoelectronics innovation, and is the leader in many of its serviced markets
Avago Technologies ConfidentialPresentation title herePage 6
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Storage, Computing & NetworkingData storage
Servers
Storage arrays
Switches and routers
Service provider networking
MobileWireless handsets
Wireless infrastructure
Wireless networking
DigitalConsumerPrinters and imaging
Laser and optical mice
Digital TVs:
-LCD TVs
-Plasma TV’s
AutomotiveSafety
In-car infotainment
Navigation
Lighting
IndustrialFactory automation
Motor controls
Power generation
Serviced Markets
Avago Technologies ConfidentialPresentation title herePage 7
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Solutions for Storage, Computing and Networking
Networking ASICs Fiber OpticsPrinter ASICs, SOCs, Motion Control, Infrared, Optical Navigation
Avago Technologies ConfidentialPresentation title herePage 8
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OutlineIntroduction
Datacom – telecom networks
Pluggable solutions
10 Gb platforms and segmentation within the network
10 Gb devices and technologies for pluggable transceivers
Key design elements for high performances laser sources
Direct modulation of uncooled laser sources
Advanced laser sources for pluggable transceivers
Avago Technologies ConfidentialPresentation title herePage 9
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Long Haul
Metro
Storage Enterprise
DATACOM applicationa market which outperformed (vs. Telecom Market)
T E L ECOM application, single O�or WDMa market which start recovering
Private networksPublic networks
2-20 km 20-100 km
Today’s Network
Avago Technologies ConfidentialPresentation title herePage 10
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Size of the optical component market for datacom and telecom
47%
53%
DATACOM:SAN, LAN, Enterprise
T E L ECOM:Long Haul, Metro, PON..
Mostly T ransceivers Mostly discrete lasers, modulator, PD, Filters…., few transceivers
Avago Technologies ConfidentialPresentation title herePage 11
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T raditional components Pluggable transceiver approach
•Multiple compact modules per circuit card
•Pluggability: pay as you go
•One bulky, pigtailed, module per equipment circuit card
•Hand soldered assembly
Market is driving pluggable module solution
DATACOM and TELECOM trend: from discrete components to subsystems
Avago Technologies ConfidentialPresentation title herePage 12
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Optical coupling:Lens+Optical Isolator+Lens+pigtailed fiber
Chip laser
DATACOM and TELECOM trend: from discrete components to subsystemsButterfly Laser Module
Temperature control
Back detectorElectrical / RF connections
Avago Technologies ConfidentialPresentation title herePage 13
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~250 x 250 mm
LAMBDAPACK-2.5 DWDM Pluggable Transceiver- Integrated heatsink- Up to 8 modules side by side
~103 x 51 mm
Market is driving pluggable module solutionMarket is driving pluggable module solution
DATACOM and TELECOM trend: from discrete components to subsystems
Avago Technologies ConfidentialPresentation title herePage 14
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PLUGGABILITY
LASER SOURCESworking @
HIGH OPERATING TEMPERATURELOW POWER CONSUMPTION
butNO COMPROMISES FOR PERFORMANCES
Cost reduction route for optical components
Stable and reliable technological processesHigh Yield, high repeatability run-to-run
a technology ready for high volume/low cost production
Avago Technologies ConfidentialPresentation title herePage 15
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OutlineIntroduction
Datacom – telecom networks
Pluggable solutions
10 Gb platforms and segmentation within the network
10 Gb devices and technologies for pluggable transceivers
Key design elements for high performances laser sources
Direct modulation of uncooled laser sources
Advanced laser sources for pluggable transceivers
Avago Technologies ConfidentialPresentation title herePage 16
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10 Gb VCSEL @ 850nm
10 Gb FP@ 1300 nm
10 Gb DFB@ 1300 nm
EAM
DFB
separation
ED08
10 Gb EML@ 1550 nm
Tunable@ 1550 nm
Avago Technologies ConfidentialPresentation title herePage 17
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XENPAK is the first 10G Ethernet transceiver-MSA date: March 2002-dimension: 121x53 mm-DATACOM
X2 is the next evolution to a smaller XAUI-based 10G Ethernet solution- MSA date: March 2003-dimension: 68x53 mm-DATACOM
XFP is the next generation platform with a 10Gbit/s serial: data agnostic
-MSA date: April 2003
-dimension: 78x18 mm
-DATACOM/TELECOM
10Gb platformsevolution
Avago Technologies ConfidentialPresentation title herePage 18
FOPDOutlineIntroduction
Datacom – telecom networks
Pluggable solutions
10 Gb platforms and segmentation within the network
10 Gb devices and technologies for pluggable transceivers
Key design elements for high performances laser sources
Direct modulation of uncooled laser sources
Advanced laser sources for pluggable transceivers
Avago Technologies ConfidentialPresentation title herePage 19
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Semiconductor Lasers
19601960 19701970 19801980 19901990 20002000
GaAs-omojunction
GaAs/GaAlAs-eterojunction
InP/InGaAsP
Short wavelength -compact disk
High performance lasers for telecom Transceiver - datacom
downturn telecom market
1962, Semiconductor lasers:GE,MIT, IBM, Un. Illinois
1969, R.T. semiconductor lasers
1972, Bell Labs,paper onDFB (Distributed Feed-Back)
1976, MIT first 1 um laser
1984 laser for compact disk10.000.000 chp/year
1990, MQW laser
2000, uncooled laser
FOPD
Material systems for semiconductor lasers
FOPD
Carrier population generation Electrical injection
Cavity Crystal Mirrors (FP)or Grating (DFB – DBR)
Active material Semiconductor layer with optical gain
electrical Heterojunction
optical Optical waveguide
Semiconductor Laser is:
Confinements:
FOPD
Eg
n
p
b) eterogiunzione in assenza di polarizzazione
d) eterogiunzione in polarizzazione diretta
pn
livelllo diFermi
p
n
livelllo di Fermi
Eg
a) omogiunzione in assenza di polarizzazione
c) omogiunzione in polarizzazione diretta
p n
elettroni elettroni
lacune lacune
omojunctionomojunction heterojunctionheterojunction
Electrical confinement
FOPD
1 1.1 1.2 1.3 1.4 1.5 1.6 1.73.15
3.2
3.25
3.3
3.35
3.4
3.45
3.5
3.55
Re
fract
ive
ind
ex
wavelength (Pm)
InP
Q(Og=1.1 Pm)
Q(Og=1.3 Pm)
Q(Og=1.55 Pm)
Material In1-xGax AsyP1-y
Optical confinement
MMstrato p
strato n
strato attivo
n1
n1
n2M1 M2
n2 > n1
FOPD
O
Cavity modesCavity modes
Fabry-Perot resonator
SE mL 2}Re{2 Resonance equation(phase
condition)
Avago Technologies ConfidentialPresentation title herePage 25
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Fabry-Perot Laser
0 20 40 60 80
corrente (mA)
0
2
4
6
8
po
ten
za(m
W)
1280 1285 1290 1295 1300 1305
-70
-60
-50
-40
-30
-20
Wavelength (nm)
Am
plit
ude
(dBm
)
Opt. Sp.: Path: LAB\osa\fa36; Device:br00T20u; I = 30.0 mA; Peak: 1291.0 nm; 23-Jan-2003
2SWLFDO�FDYLW\� �DFWLYH�PDWHULDO
Ibias
Multimodal emission
Short haul – not necessarily true…
Avago Technologies ConfidentialPresentation title herePage 26
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DFB Laser
Grating
•Phase shifted grating allows to get 100% single mode yield, for ideal AR/AR coatings on both facets
/
T 90+Tb
b+/ = m (O / n)b = / sinT
/ (1+sinT� m(O / n)
O% 2n/O% 2n/Bragg wavelength
1260 1270 1280 1290 1300 1310 1320 1330 1340 1350
-80
-70
-60
-50
-40
-30
-20
-10
Wavelength (nm)
Rel
. Am
plit
ud
e (d
B)
l Peak: 1306.7 nm; SMSR: 49 dB
Avago Technologies ConfidentialPresentation title herePage 27
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Simulation results
Threshold gain and gain margin between lasing mode and competitive mode varying grating phase
Assumption: if gain margin >0.25 Single mode
emission
Yield=100%
Phase shift value: ��
$5$5
���XP
���XP
���XP
Avago Technologies ConfidentialPresentation title herePage 28
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MULTI QUANTUM WEL L
substrate: InP:n
InP:p
MOCVD
1) Epitaxial growth
Epi growth
substrate
Epi layer
<10 nm
How we did it……(1) Epitaxial growth
Avago Technologies ConfidentialPresentation title herePage 29
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photoresist
S iN
1) photolithography1) photolithography
2) Chemical etch2) Chemical etch
luce UV
mask
How we did it……(2) Processing
Avago Technologies ConfidentialPresentation title herePage 30
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From 2”(5cm) wafer: up to 20.000 lasers
How we did it……(3) Wafer cleaved in bars
Avago Technologies ConfidentialPresentation title herePage 31
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Wafer bars Coating /cleave Chips
How we did it……(4) Scribing: from wafer to chip
Avago Technologies ConfidentialPresentation title herePage 32
FOPDOutlineIntroduction
Datacom – telecom networks
Pluggable solutions
10 Gb platforms and segmentation within the network
10 Gb devices and technologies for pluggable transceivers
Key design elements for high performances laser sources
Direct modulation of uncooled laser sources
Advanced laser sources for pluggable transceivers
Avago Technologies ConfidentialPresentation title herePage 33
FOPD Key design elements: ridge structure
Ridge structure
•No lateral blocking layers
•Very simple technological process (one-step epi-growth)
•Suitable for Al-based lasers and low cost devices
T iT i --PtPt--Au metalAu metal
SiOSiO22
Optimised facet cleavage processOptimised facet cleavage process
Heat pathHeat path
Narrow reverse mesa (small cavity, fast chips)Narrow reverse mesa (small cavity, fast chips)
Au plated padAu plated pad
Avago Technologies ConfidentialPresentation title herePage 34
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Key design elements: active cavity design
w
d
L
•w/d fixed by single mode constrain
•Thickness d increases with number of wells improving dynamic performances, but…..
- non uniform injection
- bimodal cavity
….if d is too high
•Reducing L, resonance frequency increases, but….
- Series resistance increases (lower w*L area )
- Thermal dissipation worsens Bad P-I linearity at high T
Geometry
Avago Technologies ConfidentialPresentation title herePage 35
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Key design elements: active cavity designFor a DFB the lasing mode is at Bragg wavelength (about), then detuning gain peak - OB is a design parameter
'gL
'gR
material gain for different carriers density (N)
•OB on gain peak leads to minimize threshold
•If OB is blue-shifted respect to gp, differential gain is higher ('gL> 'gR) then, resonance frequency in higher (large modulation bandwidth)
Optimization is needed for uncooled operations: GOB/GT| +0.08nm/°C and Ggp/GT | +0.4 nm/°C
Detuning
Avago Technologies ConfidentialPresentation title herePage 36
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Key design element: MQW active material
Bulk laser: Lx = 0.1 -0.3 Pm
QW (Quantum Well) laser :Active layer Lx < 0.01 Pm
bandadivalenza
bandadiconduzione
active
cladding
cladding
x =growth
banda di conduzione
banda di valenza
E 1c
E2c
E3c
hQ
E 1lhE 2lh
E1hhE2hhE3hh
(Single Quantum Well)(Single Quantum Well)
'Ec/'(g=0.67'Ev/'Eg=0.33GaAs/GaAlAs
'Ec/'(g=0.67'Ev/'Eg=0.33InP/InGaAsP
'Ec/'(g=0.75'Ev/'Eg=0.25InP/InGaAlAs
ZHOO
EDUULHU MQW key features:• gaingain•• speedspeed•• temperaturetemperature
Band structure SQW
Active layer
Avago Technologies ConfidentialPresentation title herePage 37
FOPDKey design elements: MQW active materialBand-offset optimization to reduce
heterobarrier (electrons) leakage current at high T
150 100 50 0 50 100 150
0
0.1
0.2
Level positions
e
hh
'Ecbulk
'Ec
'Ev
'Ec = 0.057 eV45 %
'Ev = 0.070 eV55%
'Ec < 'Ev � Electron Leakage
Possible solutions:
• wells/barriers strain
• different materialsInGaAsP/InGaAsP
InGaAsP/InP
for unstrain MQW
('Ec:'Ev = 40:60)
for optimized strain
('Ec:'Ev = 50:50 or better)
InGaAlAs/InP
('Ec:'Ev = 70:30)
InGaAsN/GaAs
('Ec:'Ev = 80:20!)
InGaAsP/InP
for unstrain MQW
('Ec:'Ev = 40:60)
for optimized strain
('Ec:'Ev = 50:50 or better)
InGaAlAs/InP
('Ec:'Ev = 70:30)
InGaAsN/GaAs
('Ec:'Ev = 80:20!)
Avago Technologies ConfidentialPresentation title herePage 38
FOPD
0 10 20 30 40 50 60 70 80 90 1000
5
10
15
20
25
30
35
40
45
Current (mA); - 09-Aug-2002
Po
wer
(m
W) T=20-100 ºC
0 10 20 30 40 50 60 70 80 90 1000
5
10
15
20
25
30
35
40
0 10 20 30 40 50 60 70 80 90 1000
Current (mA); - 20-Aug 2004
5
10
15
20
25
30
35
40
Po
wer
(m
W)
T=20-100 ºC
InGaAsP-basedMQW
InGaAsP-basedMQW
InGaAsAl-based MQW
InGaAsAl-based MQW
MQW active material optimization
T0=95 K
T0=48 K
Avago Technologies ConfidentialPresentation title herePage 39
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Outline
Introduction
Market downturn and recovering
Pluggable solutions
10 Gb platforms and segmentation within the network
10 Gb devices and technologies for pluggable transceivers
Key design elements for high performances laser sources
Direct modulation of uncooled laser sources
Advanced laser sources for pluggable transceivers
Avago Technologies ConfidentialPresentation title herePage 40
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Modulation of lasers sourcesTransmit information:
� Intensity modulation of laser source --
Intensity modulation by:
External modulator: � expensive //
(long haul only)
Direct modulation: � cheap/simple --
� short haul .
(<200 km @ 2.5 Gb, 30 km @ 10Gb)
� need high frequency devices /
So we want uncooled, low cost laser … and fast!!!
Avago Technologies ConfidentialPresentation title herePage 41
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Key features for direct modulationWide bandwidth
High modulation efficiency
Low Noise (RIN)
High temperature range (uncooled)
Low back reflection sensitivity
Low chirp
Current
Op
tica
l pow
er
B ias Modulation
“0” level
“1” level
Threshold
P(0)
P(1) Eye mask
experimental
Eyeaperture
Eyeamplitude
simulated
Avago Technologies ConfidentialPresentation title herePage 42
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A bit stream like this
can be heavily distorted passing through a non ideal channel; bit shape can be broadened and spread out of its time slot, overlapping on its neighbours : this is called “InterSymbolInterference (ISI)”
Recalls of digital communications
Avago Technologies ConfidentialPresentation title herePage 43
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A picture like this gives little information on signal distortion
To better evaluate signal distortion an “Eye Diagram” is builtThe eye diagram is obtained by slicing the bit sequence in one (or more) bit time slots and overlapping them.
Bit 1&2 Bit 1&2&3 Bit 1&2&3&4 Bit 1…5 Bit 1…8
Bit 1…32 Bit 1…127
First 32 bits of a longer bit sequence
Bit 1…12 Bit 1…18 Bit 1…24
Bit 1 2 3 4 5 6 7 8 9 10
Recalls of digital communications (2)
Avago Technologies ConfidentialPresentation title herePage 44
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Jitter :
DJ deterministic or pattern dependent jitter
RJ random jitter
Eye mask
Eyeaperture
Eyeamplitude
experimental
simulated
Main parameters of eye diagram
Avago Technologies ConfidentialPresentation title herePage 45
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Outline
Introduction
Datacom and telecom networks
Pluggable solutions
10 Gb platforms and segmentation within the network
10 Gb devices and technologies for pluggable transceivers
Key design elements for high performances laser sources
Direct modulation of uncooled laser sources
Advanced laser sources for pluggable transceivers
Avago Technologies ConfidentialPresentation title herePage 46
FOPDUncooled InGaAlAs ridge FP laser for 10GBASE-LRM product (300 m MMF)Device design:• Active layer: Al based material
Designed to enhance T0• 9 InGaAlAs 55Å wells; strain +0.8%• 8 InGaAlAs100Å barriers; strain –0.4%• 2xSCH1: InGaAlAs 350Å• 2xSCH2: InAlAs 500Å
• Device technology:High yield/low cost/Al compatible
• Reversed mesa ridge• Auto-aligned mesa
• Optical cavity:Very fast chip at high T operation
• Narrow cavity volume • Hr coating optimised versus both
Temperature and speed
200 Pm long x 250 Pm wide device
Post Deadline Paper at OFC 2005
Avago Technologies ConfidentialPresentation title herePage 47
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Device results - static 20 °C base chip temperature:
• Threshold 7.6 mA• High power 23 mW
85 °C base chip temperature:• threshold 15.6 mA • power 16.8 mW
95 °C base chip temperature:• threshold as low as 18 mA• Still more than 15 mW
0 10 20 30 40 50 60 70 80 90 1000
5
10
15
20
25fa021ak113: Optical Power (T=20, 40, 60, 80, 85, 90, 95 °C)
Current (mA); - 23-Dec-2004
Pow
er (
mW
)
T=20ºC; Ith= 7.6mA; PIth+30
= 8.9mW; Pmax
= 23.8mW T=40ºC; Ith= 9.3mA; P
Ith+30= 8.5mW, P
ratio,Ith+30=0.95; P
max= 22.4mW
T=60ºC; Ith=11.5mA; PIth+30
= 7.8mW, Pratio,Ith+30
=0.88; Pmax
= 20.0mWT=80ºC; Ith=14.5mA; P
Ith+30= 7.1mW, P
ratio,Ith+30=0.80; P
max= 17.4mW
T=85ºC; Ith=15.6mA; PIth+30
= 6.9mW, Pratio,Ith+30
=0.78; Pmax
= 16.8mWT=90ºC; Ith=16.6mA; P
Ith+30= 7.0mW, P
ratio,Ith+30=0.78; P
max= 15.9mW
T=95ºC; Ith=17.9mA; PIth+30
= 6.7mW, Pratio,Ith+30
=0.76; Pmax
= 15.3mW
Key points:• High optical power enable high
coupling loss• Small threshold increasing up to 95 C
since high T0 • Small bias variation over T• Small efficiency degradation over T� Constant eye quality with constant
modulation current!
Centre of eye power
Bias variation (0-85 °C)
Measured on chip on carrierMeasured on chip on carrier
Slope eff. ratio= 80%
Avago Technologies ConfidentialPresentation title herePage 48
FOPD
Device results - dynamic (eye diagrams)
10 Gb eye diagrams, 35 mA modulation current swing constant over T (20-110 °C)
20 °C base chip temperature:• 5 dB e.r. @ 35 mA bias C.O.E. 9• GbE mask: 57% mask margin 9
85 °C base chip temperature:• 5 dB e.r. @ 52 mA bias C.O.E. 9• GbE mask: 31% mask margin 9
110 °C base chip temperature:• 4.5 dB e.r. @ 60 mA bias C.O.E. 9• GbE mask: 22% mask margin 9
Eyes show no degradation up to –8 dB B.R. (Fiber)
Measured probing directly the chip by 40 GHz 50 Measured probing directly the chip by 40 GHz 50 OhmOhm--series matched RF probeseries matched RF probe
�������&�
�������&�
���������&�
Avago Technologies ConfidentialPresentation title herePage 49
FOPD
Modal dispersion in MM fibersModal dispersion in MM fibers
back
Avago Technologies ConfidentialPresentation title herePage 50
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Technologies for LRM application: EDC (Electronic Dispersion Technologies for LRM application: EDC (Electronic Dispersion CompensationCompensation))
•EDC uses adaptive electrical filtering techniques to compensate for limitations incurred during fiber propagation:
- modal dispersion- chromatic dispersion - polarization modal dispersion
•EDC can be realized in an integrated circuit.•EDC can enhance the performance of existing transceivers and enabling newapplications.
EDC technology
10 Gbps to 300m over
legacymultimode fiber
TX CDR/LD
FP
/DF
B
LinTIA
220m MMF RX CDR
Electronic Dispersion Compensation
algorithm
D
t1
D
t2
D
tn
L PF CDR
Signal
Feedback
Adaptive controller
t1 tn
EQ
Why?
Avago Technologies ConfidentialPresentation title herePage 51
FOPD
10Gb/s DFB Sonet for XFP LR
L
L/2 L/2
Phase shifted grating
Rev. mesa
Grating, O/4 phase shift centered
stop etchInP:p spacer
grating layer
InGaAlAs ridge structureInP:n
InP + InGaAscontact layer
InGaAlAs MQW
Avago Technologies ConfidentialPresentation title herePage 52
FOPD
250
um
Emitting facet
200 um
Angled section toward output facet
ARARARAR
Bar number
Main specsTarget application: 10Gb/s multi rate XFP LR
•80 ºC base chip max temperature
•Direct modulation at 10Gb/s
•>=7 dB ER @ 20-70 ºC, SONET OC192
DFB top view
1250 1260 1270 1280 1290 1300 1310 1320 1330 1340
-70
-60
-50
-40
-30
-20
-10
0
W avelength (nm)
Rel
. Am
plitu
de (d
B)
Opt. S p.: P ath: L AB \osa\da071a_y1; Device: da071a_y101T 20w; I = 50.0 mA; 21-S ep-2006
O Peak: 1294.8 nm; SMSR: 50 dB
Avago Technologies ConfidentialPresentation title herePage 53
FOPD
•Ith <30mA and Pout> 8mW @ 80°C
•7dB ER @20°C with 35mA* Iswing 18% mask margin on OC192 SONET mask
•7dB ER @80°C with 35mA* Iswing 8% mask margin on OC192 SONET mask
* XFP-module provides higher Ibias and up to 55mA Iswing
Lab results
20C
80C
-20 0 20 40 60 80 100 1200
5
10
15
20
25da071ay139: Optical P ower (T =20, 40, 60, 80, 85 °C)
Current (mA); - 21-S ep-2006
Pow
er (m
W)
T=20ºC; Ith= 9.9mA; PIth+30
= 8.0mW; Pmax
= 22.5mW
T=40ºC; Ith=13.1mA; PIth+30
= 7.1mW, Pratio,Ith+30
=0.89; Pmax
= 18.6mW
T=60ºC; Ith=18.3mA; PIth+30
= 5.8mW, Pratio,Ith+30
=0.73; Pmax
= 13.9mW
T=80ºC; Ith=26.2mA; PIth+30
= 4.3mW, Pratio,Ith+30
=0.54; Pmax
= 9.0mW
T=85ºC; Ith=28.8mA; PIth+30
= 4.0mW, Pratio,Ith+30
=0.50; Pmax
= 7.8mW
Avago Technologies ConfidentialPresentation title herePage 54
FOPD70C
40C
-5C
0.426A3.3V ICC
36.256mAI2CTXBIAS50.38dBSMSR
1297.38nmPEAKWL-3.05
dBmTXOPT
6.91dBTXEXR18%TXMM
-5C
0.445A3.3V ICC
-3.55dBmTXOPT
6.98dBTXEXR16%TXMM
40C
0.488A3.3V ICC
64.61mAI2CTXBIAS48.22dBSMSR
1304.36nmPEAKWL-3.75
dBmTXOPT
6.96dBTXEXR19%TXMM
38.6mUI
Jitter Gen Vpk-pk 4M-80M
54.9mUI
Jitter Gen Vpk-pk 50K-80M
70C
TTC-DFB, bandwidth and XFP module results
0 2 4 6 8 10 12 14 16 18 20-15
-10
-5
0
5
F requency (GHz)
Rel
. Am
plitu
de (d
B)
Device: \NET _AN\da130__y1\da130__y121T 20 : Mod. Bandwidth; 11-Jun-2007
Ith
+ 10 mA: (Ith
= 11 mA); f-3dB
= 12.90 GHz
Ith
+ 30 mA: (Ith
= 11 mA); f-3dB
= 18.96 GHz
Ith
+ 50 mA: (Ith
= 11 mA); f-3dB
= 20.00 GHz
Ith
+ 70 mA: (Ith
= 11 mA); f-3dB
= 20.00 GHz
Ith
+ 90 mA: (Ith
= 11 mA); f-3dB
= 20.00 GHz
Bw=19GHz @ Ibias=40mA T=20C
0 2 4 6 8 10 12 14 16 18 20-25
-20
-15
-10
-5
0
5
10
F requency (GHz)
Rel
. Am
plitu
de (d
B)
Device: \NET _AN\da130__y1\da130__y121T 80 : Mod. Bandwidth; 11-Jun-2007
Ith
+ 10 mA: (Ith
= 27 mA); f-3dB
= 9.12 GHz
Ith
+ 30 mA: (Ith
= 27 mA); f-3dB
= 13.69 GHz
Ith
+ 50 mA: (Ith
= 27 mA); f-3dB
= 15.28 GHz
Ith
+ 70 mA: (Ith
= 27 mA); f-3dB
= 15.73 GHz
Bw=13.7GHz @ Ibias=57mA T=20C
Avago Technologies ConfidentialPresentation title herePage 55
FOPD
Pout
Ia Ig
Pout
DBR a 2 sezioni
Sezione attiva responsabile della emissione di fotoni
Sezione di tuning sulla quale è presente un
reticolo di Bragg
Tunable devices: Distributed Bragg Reflector DBR
0 2 4 6 8 1 0 1 2 14 16 1 8 201.5
1. 502
1. 504
1. 506
1. 508
1 .51
1. 512
1. 514
1. 516
1. 518
Simulazione e misura della lunghezza d’onda diemissione in funzione della corrente nel grating
2-sections DBR
Avago Technologies ConfidentialPresentation title herePage 56
FOPDDevice results: tuning maps
-10 0 10 20 30 40 50 60 701.55
1.555
1.56
1.565
Wav
elen
gth
[um
]GRATING Current [mA]
-10 0 10 20 30 40 50 60 700
20
40
60
SM
SR
[dB
]
Emitted wavelength and SMSR versus grating current
> 10 nm tuning > 40 dB SMSR @ I active > 40 mA
Avago Technologies ConfidentialPresentation title herePage 57
FOPD
Passive and tuning waveguides
DBR and SOA active waveguide
Wide tunable laser: DBR Array
InP Monolithically integrated
DBR Array + PICBent waveguides
MMI
SOA
4 grating pitches (EBL) � 10 nm spaced
Bragg Wavelengths
Bent output
Output beam
����XP
�����XP
���XP
Medium tuning DBRarray
ECOC 2003ECOC 2003
Avago Technologies ConfidentialPresentation title herePage 58
FOPD
Avago tunable laser: key featuresSmall (0.67 mm2 ,1670um x 400um) chip size
40 nm tuning range
• 4 x 10 nm tuning (each DBR)
• easy tuning control
+ 13 dBm output power ex facet
• at only 50 mA DBR active, various grating curr., 100 mA SOA
Low (<250 mW) power consumption
BlankingBlanking (>40dB) and VOAVOA (>10dB) features
Bent SOA with “relaxed specs” Anti Reflection Coating (10-3)
By a monolithic InP based chip
R. Paoletti et al, ECOC 2003R. Paoletti et al, ECOC 2003
Avago Technologies ConfidentialPresentation title herePage 59
FOPD
Device results: emitted spectrum
1.52 1.53 1.54 1.55 1.56 1.57 1.58 1.59 1.6-70
-60
-50
-40
-30
-20
-10
0
chip4-M35-2 @ 20°C: Iact=50mA
Wavelength - nm -
Rel
. Opt
ical
Pow
er -
dB -
41 nm tuning range
Avago Technologies ConfidentialPresentation title herePage 60
FOPD
FINE E…
grazie per l’attenzione!
Avago Technologies ConfidentialPresentation title herePage 61
FOPD
The end!BooksG. Guekos, Photonic Devices, Springer, 1999, ISBN 3-540-64318-4
L. A. Coldren, S. W. Corzine, “Diode lasers and photonic integrated circuits”, John Wiley and sons, inc.,
P. Vasil’ev, “Ultrafast diode laser”, Artec House Boston-London
K. Petermann, “Laser Diode Modulation” and Noise, Dordrecht, The Netherlands: Kluwer Academic Publishers
Related published paper F. Delpiano, R. Paoletti, P. Audagnotto and R. Puleo, "High Frequency Modelling and Characterisation of High Performance DFB Laser Modules", IEEE Transaction on Components, Hybrids, and Manufacturing Technology, Part B, Vol. 17, No 3, pp. 412-417, august 1994.
R. Paoletti, D. Bertone, A. Bricconi, R. Fang, L. Greborio, G. Magnetti, M. Meliga, "Comparison of Optical and Electrical Modulation Bandwidths in three different 1.55 Pm InGaAsP Buried Laser Structures", SPIE’S International Symposia - Photonics West ’96, pp. 296-305, 30 Jan. - 1 Febr. 1996, S. Josè, CA, USA.
R. Paoletti, M. Meliga, I. Montrosset, “Optical Modulation Technique for Carrier Lifetime Measurement in Semiconductor Lasers”, IEEE Photonics Technology Letters, Vol. 8, No. 11, pp. 1447-1449, November 1996.
R. Paoletti, M. Meliga, G. Oliveti, M. Puleo, G. Rossi, L. Senepa, “10 Gbit/S Ultra-Low Chirp 1.55PM Directly Modulated Hybrid Fiber Grating -Semiconductor Laser Source”, 23rd European Conference on Optical Communication ECOC ’97, Mo 3B. 22-25 September 1997, Edimburgh (UK).
R. Y. Fang, D. Bertone, M. Meliga, Montrosset*, S. Murgia, G. Morello, G. Magnetti, G. Oliveti, R. Paoletti, “A simple structure 1.55 Pm InGaAsP/InP Spot Size Converted (SSC) laser”, IEEE Photonics Technology Letters, Vol. 10, No. 6, pp. 775-777, June 1998.
G. Rossi, R. Paoletti, M. Meliga, “SPICE simulation for analysis and design of fast 1.55 Pm MQW laser diodes”, IEEE Journal of Lightwave Technology, Vol. 16, No. 7, July 1998.
R. Paoletti, M. Agresti, G. Burns, G. Berry, D. Bertone. P. Charles, P. Crump, A. Davies, R.Y. Fang, R. Ghin, P. Gotta, M. Holm, C. Kompocholis, G. Magnetti, J. Massa, G. Meneghini, G. Rossi, P. Ryder, A. Taylor, P. Valenti and M. Meliga, "100 qC, 10 Gb/s directly modulated InGaAsP DFB lasers for uncooled Ethernet applications", post-deadline at European Conference on Optical Communication ECOC ’2001, October 2001,Amstedam (NL).
R. Paoletti, M. Meliga, "Uncooled, high speed DFB lasers for Gigabit Ethernet applications", invited paper at SPIE’S International Symposia -Photonics West Optoelectronics 20021, 19 - 25 Jan. 2002, S. Josè, CA, USA.
R. Paoletti, C. Coriasso, M. Agresti, P. Gotta, G. Magnetti, A. Moro, D. Sarocchi, D. Soderstrom, C. Cacciatore, L. Fratta, M. Vallone, A. Stano, E. Liotti, P. Valenti, G. Roggero, G. Fornuto, G. Burns, R.Harrell, P. Charles, D. Clark, G. Berry and M. Meliga, "Small chip size, low power consumption, fully electronic controlled tunable laser source with 40 nm tuning range and 20 mW output power for WDM applications", ECOC 2003, 21 - 25 Sept. 2003, Rimini, Italy
R. Paoletti, M. Agresti, D. Bertone, L. Bianco, C. Bruschi, A. Buccieri, R. Campi, C.Dorigoni, P. Gotta, M. Liotti, G. Magnetti, P. Montangero, G. Morello, C. Rigo, E. Riva, D. Soderstrom, S. Stano, P. Valenti, M. Vallone, M. Meliga" Highly reliable and high yield 1300 nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10 Gb/s, up to 110 ºC, with constant current swing ", Post deadline at Optical Fiber Conference OFC 2005, Anaheim (CA)
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