introduction of si microwave devices · introduction of si/sige microwave transistors october,...
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Introduction of Introduction of Si/SiGe Microwave TransistorsSi/SiGe Microwave Transistors
October, 2009Microwave Device Sales Engineering
Compound Semiconductor Devices Division,Discrete and IC Operations Unit,
NEC Electronics Corporation
GET-SB-1821
2
*fmax:@1V, NF:@2GHz,2v,3mA2008200220001998
NF(dB)
100
50
1.0
1.5
fmax(GHz)
150
0
200
250
300
350
0.5
SiGe SiGe:C
= Innovate a new SiGe(:C) technology=
UHS2UHS2
UHS4UHS4
PureSi
UHS0UHS0SAT3SAT3 Lower NFLower NF
High SpeedHigh Speed1.0dB
0.8dB
0.6dB
0.43dB75G
80G
100G
201020062004
UHS3UHS3
UHS Process Road-Map
3
Process of Microwave Transistors= Self-align Structure Bipolar Technology =
Process Process TechnologyTechnology
UHS0UHS0
UHS2UHS2
UHS3UHS3
2SC5507 2SC5508 2SC5509
NESG2021M05 NESG220033 NESG2031M05 NESG220034 NESG2101M05 NESG240033 NESG250134,260234,270034 NESG240034
NESG210833
NF:0.95dB@5.2G NF:0.95dB@5.2G
UHS0HV UHS0HV
NF:0.9dB@2GNF:0.9dB@2G
UHS0 UHS0
UHS2UHS2
UHS2HVUHS2HVNF:0.8dB@2GNF:0.8dB@2G NF:1.3dB@5.2GNF:1.3dB@5.2G
NF:1.1dB@2GNF:1.1dB@2G
NESG2030M04
2SC5754 (P-1:26dBm)
UHS3UHS3
fTfT=60GHz=60GHz
fTfT=25GHz=25GHz
Noise Noise PerformancePerformance
High Breakdown Voltage version
BVceo: 5V(min.)
SiGeSiGe
SiGeSiGe
SiSi
NESG3031M05 NESG3031M14 NESG3032M14 NESG3033M14
UHS4UHS4
SiGe:CSiGe:C
UHS4UHS4
NESG4030M14
4
Transistors Package Line-upUNIT:mm
MM:33SMM:30 USMM:19
60%(2013)
30%(1608)
100%(2915)
3PIN
MM:39(2915)
SMM:18(2013)
TSMM:M04/M05(2013)
L2MM:M14(1208)
4PIN
SMM:M01/T(2013)
L2MM:M16/TD(1208)
L2MM:TU(2020)
6-8PIN
5
New Lineup Discrete Transistors SiGe HBT Family
New LineupNew Lineup Discrete TransistorsDiscrete Transistors SiGe HBT FamilySiGe HBT Family
6
New SiGeHBT productFEATURES- Suitable Application : UHF-Band Low Noise & Low Distortion Amplification.- Semiconductor Process : SiGeHBT
(Silicon Germanium Hetero junction Bipolar Transistor).- Package : 3Pin Power Mini Mold, 3Pin Mini mold- Include of ESD Protection
Characteristic
NESG210833- NF = 0.70dB TYP. Vce=5V,Ic=5mA,f=1GHz- Po(1dB) = 18.50dBm TYP. Vce=5V,Ic(set)=30mA,f=1GHz- OIP3 = 31dBm TYP. Vce=5V,Ic(set)=30mA,f=1GHz
NESG220033,NESG220034- NF = 0.75dB TYP. Vce=5V,Ic=10mA,f=1GHz- Po(1dB) = 21.5dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz- OIP3 = 35dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz
NESG240033,NESG240034- NF = 0.75dB TYP. Vce=5V,Ic=15mA,f=1GHz- Po(1dB) = 23.5dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz- OIP3 = 35.5dBm TYP. Vce=5V,Ic(set)=40mA,f=1GHz
New New
ProductProduct
7
New NESG HBT product
PACKAGE INFORMATION
NESG240034-A
Lead FreePackage code : 33,34
Index Num.Ic(Max) : 10=100mA, 20=200mA,40=400mA
Process Generation : 2=UHS2-HV, 3=UHS3
Mean of Products Name
CE
B
34 Package(3Pin Power Mini Mold)
BE
C
33 Package(3Pin Mini Mold)
New New
ProductProduct
8
SiGe:C Transistor
Concept- Advanced SiGe:C transistor
with New UHS4 process- Improvement of ESD Protection
Application- Low Noise Amplifier for 2.4GHz to 5.8GHz(Same Application for NESG3031M14)
- Mobile Communications etc.Features- Low Noise Figure : 1.1dB @f=5.8GHz- High Gain : 11.5dB @f=5.8GHz - hFE : 270 to 540
Package
NESG4030M14
4Pin L2MM“M14” Package
t=0.5mm
CE
EB
New New
ProductProduct
9
ESD Voltage Performance
(Ref)NESG3031M14
NFhFE
NESG4030M14NESG4030M14
TYP 1.1 dB@5.8GHz
(Ic=6mA)
TYP 15 dB@5.8GHz
(Ic=20mA)
Typ 300@Vce=2V
Ic=6mA(220-380)
MSGMM-Method HBM-Method
32V 74V
=Same RF performance and grater ESD Voltage from NESG3031M14=
NEWNEW
NESG3031M14 NESG3031M14 vsvs NESG4030M14NESG4030M14
600V74V(C to B) (C to B)
(C to B) (C to B)
Typ 400@Vce=2V
Ic=6mA(270-540)
TYP 1.1 dB@5.8GHz
(Ic=6mA)
TYP 15 dB@5.8GHz
(Ic=20mA)
10
SiGe Transistor
FLAT-LEAD 4-PIN THIN-TYPESUPER MINIMOLD “M05” Package
Concept- Advanced SiGe transistor
with New UHS3 process- 110GHz fT /fmax process technology
Application- Low Noise Amplifier for 2.4GHz to 5.8GHz
Mobile Communications etc.
Features- Low Noise Figure : 0.95dB @f=5.2GHz- High Gain : 10dB @f=5.2GHz - hFE : 220 to 380
Package
NESG3031M05 / M14
4Pin L2MM“M14” Package
t =0.59mm
CE
EB
t=0.5mm
CE
EB
11
SiGe Transistor
Concept- Advanced SiGe transistor
with New UHS3 process- 110GHz fT /fmax process technology
Application- Low Noise Amplifier for GPS etc.
Features- Low Noise Figure : 0.6dB @f=2.0GHz- High Gain : 17.5dB @f=2.0GHz - hFE : 220 to 380
Package
NESG3032M14
4Pin L2MM“M14” Package
t=0.5mm
CE
EB
12
PackagePackage
NESG3033M14
PerformanceNF= 0.6 dB TYP. @VCE=2V, IC=6mA, f=2GHz Ga= 17.5 dB TYP. @VCE=2V, IC=15mA, f=2GHz Pin LayoutPin Layout
Applications
-High ESD Performance-Same RF-Performance of NESG3032-L-band low noise and high gain
- Low Noise Amplifier for GPS etc.- LNA for 1 to 3GHz Applications
0.5
0.11
234 1
0.81.0
0.15
1.2
0.8
Concept■■
■■
■■
1: Collector 2:Emitter 3: Base 4: NC(Connected to 2 pin)
Pb-Free Product
SiGe Low Noise TransistorSiGe Low Noise Transistor
13
0.20 ∞521.00.5
0.2
0.5
1
5
2
-0 .2
-0.5
-1
-2
-5
ESD Voltage Performance
(Ref)NESG3032M14
NFhFE
S11 K factor
NESG3033M14NESG3033M140.6 dB@2GHz
(Ic=6mA)
20.5 dB@2GHz
(Ic=15mA)
Typ 300@Vce=2V
Ic=6mA
MSGMM-Method HBM-Method
1.5~1.8kV90~100V
32V 74V
=Same RF performance and grater ESD Voltage from NESG3032M14=
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 2.0 4.0 6.0 8.0 10.0
f(GHz)
K
0.20 ∞
521.00.5
0.2
0.5
1
5
2
-0 .2
-0.5
-1
-2
-5
@Vce=2V,Ice=7mA
S22
@Vce=2V,Ice=7mA
-:NESG3033M14-:NESG3032M14
NESG3032M14 / NESG3033M14NESG3032M14 / NESG3033M14
(E to B) (E to B)
600V74V(C to B) (C to B)
(C to B) (C to B)
14
Single Si / SiGe Tr Line-up fT Ic Vce 3Pin 3Pin 3Pin 3Pin 3Pin 4Pin 4Pin 4Pin 4Pin 4Pin 4PIN 6Pin 6Pin
(GHz) (mA) (V) Po-MM MM SMM USMM L2MM Po-MM MM SMM TSMM TSMM L2MM SMM L2MM(1608) (1005) (1208) (1208)
(SOT-89) (SOT-23) (SOT-323) (SOT-89) (SOT-143) (SOT-343) (SOT-363)34 33 30 19 M13 M02 39 18 M04 M05 M14 M01 M16
4.5×2.5 2.9×1.5 2.0×1.25 1.6×0.8 1.0×0.5 4.5×2.45 2.9×1.5 2.0×1.25 2.0×1.25 2.0×1.25 1.2×0.8 2.0×1.25 1.2×0.84.5×4.0 2.9×2.8 2.0×2.1 1.6×1.6 1.0×0.7 4.5×3.95 2.9×2.8 2.0×2.1 2.0×2.05 2.0×2.05 1.2×1.0 2.0×2.1 1.2×1.0
1.5 1.3 0.9 0.75 0.5 1.5 1.3 0.9 0.59 0.59 0.5 0.9 0.5Si 5.5 50 12 2SA1978
8.5 50 12 2SA19775.0 60 12 2SC4571 2SC50045.3 250 15 2SC4536 2SC53375.5 30 12 2SC4570 2SC50056.0 150 12 2SC4703 2SC53387.0 100 12 2SC3357 2SC3356 2SC4226 2SC5006 2SC5336 2SC4093 2SC50119.0 65 10 2SC3583 2SC4227 2SC5007 2SC4094 2SC5012
35 10 2SC3585 2SC4228 2SC5008 2SC4095 2SC5013100 5.5 2SC580130 6 2SC5010 2SC4957 2SC5015100 6 2SC5455 2SC5752 2SC5753
14.0 30 6 2SC536914.5 50 6 2SC5454 2SC5750 2SC5751
10 3 2SC5181 2SC518030 3 2SC5186 2SC5185
16.0 30 3150 6 2SC5288300 6 2SC5289
20.0 35 3 2SC578712 3.3 2SC5507 NE661M0535 3.3 2SC5606 2SC5508 2SC5704100 3.3 2SC5509500 5 2SC5754
SiGe 100 5 NESG210719400 5.5 * NESG240034 NESG240033500 9.2 NESG250134
12 200 5.5 * NESG220034 NESG22003314.0 600 9.2 NESG26023415.0 750 9.2 NESG27003415.5 100 5.5 * NESG21083318.0 40 5 NESG204619
4.3 NESG3031M05 NESG3031M144.3 NESG3032M144.3 * NESG3033M145 NESG2021M05 NESG2021M165 NESG2031M05 NESG2031M16
100 5 NESG2101M05 NESG2101M1636.0 35 2.3 2SC5761
SiGe:C 27.0 35 3 * NESG4030M14
Discrete and IC Operations Unit, Compound Semiconductor Devices Division
Package SizeHeight
Period :2009.10.01 to 2010.03.31ISSUED:2009.10.01
ProcessESD
Mold Size
10.0
10
25.0 35
12.0
15.5
18.0
25.0
Si & SiGe Bipolar Transistors FamilySi & SiGe Bipolar Transistors Family
15
Single Si / SiGe Tr Line-upProcess fT Ic Vce 3Pin 3Pin 3Pin 3Pin 3Pin 4Pin 4Pin 4Pin 4Pin 4Pin 4pin 6Pin 6Pin
(GHz) (mA) (V) Po-MM MM SMM USMM L2MM Po-MM MM SMM TSMM TSMM L2MM SMM L2MM(1608) (1005) (1208) (1208)
(SOT-89) (SOT-23) (SOT-323) (SOT-89) (SOT-143) (SOT-343) (SOT-363)34 33 30 19 M13 M02 39 18 M04 M05 M14 M01 M16
4.5×2.5 2.9×1.5 2.0×1.25 1.6×0.8 1.0×0.5 4.5×2.45 2.9×1.5 2.0×1.25 2.0×1.25 2.0×1.25 1.2×0.8 2.0×1.25 1.2×0.84.5×4.0 2.9×2.8 2.0×2.1 1.6×1.6 1.0×0.7 4.5×3.95 2.9×2.8 2.0×2.1 2.0×2.05 2.0×2.05 1.2×1.0 2.0×2.1 1.2×1.0
1.5 1.3 0.9 0.75 0.5 1.5 1.3 0.9 0.59 0.59 0.5 0.9 0.5Si 5.5 50 12 NE97833
8.5 50 12 NE977335.0 60 12 NE58230 NE582195.3 250 15 NE46134 NE461M025.5 30 12 NE58130 NE581196.0 150 12 NE46234 NE462M027.0 100 12 NE85634 NE85633 NE85630 NE85619 NE856M02 NE85639E NE856189.0 65 10 NE68133 NE68130 NE68119 NE68139E NE68118
35 10 NE68033 NE68030 NE68019 NE68039E NE68018100 5.5 NE851M1330 6 NE68519 NE68539E NE68518
100 6 NE67839 NE67818 NE678M0414.0 30 6 NE696M0114.5 50 6 NE67739 NE67718 NE677M04
10 3 NE68619 NE6861830 3 NE68719 NE68718
16.0 30 3150 6 NE68939300 6 NE69039
20.0 35 3 NE894M1312 3.3 NE661M04 NE661M0535 3.3 NE66219 NE662M04 NE662M16
100 3.3 NE663M04500 5 NE664M04
SiGe 100 5 NESG210719400 5.5 * NESG240034 NESG240033500 9.2 NESG250134
12 200 5.5 * NESG220034 NESG22003314.0 600 9.2 NESG26023415.0 750 9.2 NESG27003415.5 100 5.5 * NESG21083318.0 40 5 NESG204619
4.3 NESG3031M05 NESG3031M144.3 NESG3032M144.3 * NESG3033M145 NESG2021M05 NESG2021M165 NESG2031M05 NESG2031M16
100 5 NESG2101M05 NESG2101M1636.0 35 2.3 NESG2030M04
SiGe:C 27.0 35 3 * NESG4030M14
Discrete and IC Operations Unit, Compound Semiconductor Devices Division
Package SizeHeight
Period :2009.10.01 to 2010.03.31ISSUED:2009.10.01
ESD
Mold Size
10.0
10
25.0 35
12.0
15.5
18.0
25.0
Si & SiGe Bipolar Transistors FamilySi & SiGe Bipolar Transistors Family
16
15
20
25
30
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Vce=2V,Ic=5mAVce=2V,Ic=10mAVce=3V,Ic=3.5mAVce=3V,Ic=10mA
NE662M04(2SC5508)Si-BJT
NESG2031M05 SiGe-HBT
NE52418 InGaP-HBT
NE34018 (Discontinue)
NE38018(Discontinue)
Ass
ocia
ted
Gai
n G
a (d
B)
Minimum Noise Figure NFmin (dB)
Ga vs. NFmin.
µPC8215TU SiGe-MMIC
µPC8211TK SiGe-MMIC
NESG2021M05 SiGe-HBT
uPG2311T5F GaAs MMIC
NE3509M04HJ-FET
NESG3032M14 SiGe-HBTNESG3033M14 SiGe-HBT
NE3508M04HJ-FET
uPC8230TU SiGe:C MMIC
uPC8231TK SiGe:C MMIC
uPC8232T5N SiGe:C MMIC
@f=1.5GHz band
LNA Devices Lin-up for GPS
17
10
15
20
25
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Vce=2V,Ic=5mA
Vce=2V,Ic=10mA
NE662M04 (2SC5508)
Si-BJT
NESG2021M05SiGe-HBT
NESG2031M05 SiGe-HBT
NE52418InGaP-HBT
Ass
ocia
ted
Gai
n G
a (d
B)
Minimum Noise Figure NFmin (dB)
NFmin. vs. Ga
NE38018 (Discontinue)
NE34018 (Discontinue)
Discrete
NE3505M04 (Non-promotion)
NESG3031M05/ M14 SiGe-HBT
uPG2310TK InGaP HBT Driver MMIC
NE3509M04 HJ-FET
NE3508M04 HJ-FET
NE3510M04 HJ-FET
NE334S01 (Discontinue)
LNA Devices Lin-up for 2.4GHz Application
18
5
10
15
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Vce=2V,Ic=5mA
Vce=2V,Ic=10mA
NESG2021M05 SiGe-HBT
NESG2031M05 SiGe-HBT
NE52418 InGaP-HBT
Ass
ocia
te G
ain
Ga(
dB)
Noise Figure NF(dB)
Gain vs. Noise Figure
NE3503M04 HJ-FET
NE3210S01 HJ-FET
NE4210S01 HJ-FET
DiscreteNESG3031 SiGe-HBT
LNA Device Line-up for 5.8GHz Application
19
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