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FY2002 Energy Storage Systems Program Review
ETO Thyristor: Enabling Technology For ETO Thyristor: Enabling Technology For Low Cost Power Conditioning SystemLow Cost Power Conditioning System
Principal Investigator:Principal Investigator: Prof Alex Q. Huang Prof Alex Q. Huang Center for Power Electronics Systems, Virginia TechCenter for Power Electronics Systems, Virginia Tech
SNL Project Manager:SNL Project Manager: Stan AtcittyStan AtcittyDOE Manager:DOE Manager: Dr.Dr.Imre GyukImre Gyuk
1Home
Agenda
Presentation Outlines
•Project Objectives
•FY2002 Activities and Accomplishments• New generation ETO
• The high-power pulse test of the ETO
• Continuous high switching frequency test of the ETO
•Applications and Insertions of ETOs
•Planned Future Works
Project Objectives: Advanced High-Power Switch
GTOPow
er (I
x V
, MW
)
5
15
SCR
Target Region Target Region
Switching frequency (Hz)50 500 5000
Developing a low-cost high-frequency, high-power switch for energy storage and other applications45
IGBT
ETO: A New High Power Switch for PCS• Low voltage MOSFETs integrated with high-voltage GTO• Voltage control• Using the anode current to provide the turn-off energy• Unity turn-off gain enables fast switching speed• Unity turn-off gain enables snubberless turn-off capability
GTOPow
er (I
x V
, MW
)
5
15
SCR
Switching frequency (Hz)50 500 5000
45
Emitter Turn-Off (ETO) Thyristor
IGBT
Major ETO Development Roadmap
1.0 kA to 4 kA
4.0 kV to 6 kVGen-0
Gen-3…….
•ESSP supported three generations of development•Gen-3 developed in FY2002•Gen-4 will be developed for FY2003
Gen-2
Gen-1
The ETO : low cost solution for high-power
Toshiba GTO SG4000 JX26
Mitsubishi ETO FG4000GX-90DA
ABB ETO 5SGT40L4502
Dynex ETO DG858BW45
Universal ETO driver
• The GTOs from different manufacturers can be used as the ETO’s main switch to achieve the highest snubberless turn-off capability.
• The ETO can be optimized according to its application.
Significant ETO Characteristics
Positive temperature coefficient allows parallel operation
Significant ETO Characteristics
-1000
0
1000
2000
3000
4000
5000
0 5 10 15
Anod
e Vo
ltage
(V)
Anod
e C
urre
nt (
A)
Time (us)
Anode Current (A)
Anode Voltage (V)
Snubberless turn-off capability allows elimination of snubbers hence simpler systems
Significant ETO Characteristics
The time intervals during turn-off at 2000A, 2000V
1.36 1.44 1.4 1.4 1.4
1.2 1.2 1.2 1.2 1.2
3.4 3.4 3.4 3.43.4
0
1
2
3
4
5
6
7
1 2 3 4 5
ETO number
time
(us)
storage time voltage rising time current faling time
ETO1 ETO2 ETO3 ETO4 ETO5
•Identical switching timesallow series operation
Significant ETO Characteristics
0
20
40
60
80
100
0 500 1000 1500 2000Switching current (A)
Gat
e un
it po
wer
con
sum
ption
(W)
IGCT
ETO
Gate power @1kHz
Very low gate control power enables high-frequency operation
Built-in Current Sensing Capability of the ETO
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0 500 1000 1500 2000 2500 3000
Current (A)
PWM duty cy
cle
Measure current vs. output duty cycle
Enables easy control and system protection
Continuous high switching frequency test of ETOs
The cap filter
ETO
The 2000VDC, 1500A r.m.s, 1kHz ETO switch, Inductor, and diodes
The 1000V/100Apower supply
The 20kWresistor load
Objective: to test and evaluate the ETO’s high switching frequency operation, thermal handling capability, control power consumption, and the reliability.
The high switching frequency test results
Operation duration: continuous
Switching frequency: 1 kHz
Switching loss: 3.3 kW
ETO peak junction temperature: >100 OC
Snubberless turn-off current: 650A
Snubberless turn-off bus voltage: 2000V
The thermal test results
20
30
40
50
60
0 10 20 30 40 50 60 70 80 90 100
time (minute)
tem
pera
ture
(C)
Switching frequency: 1kHz, bus voltage : 2 kV, Switching current: 650A
ETO case temperature
ambient temperature
• Reliable thermal handling characteristic of the ETO at high switching frequency was demonstrated.
HBBB Enables Modular Multilevel Converter Design
•Modular and expandable topology for high voltage power systems,•Considerably lower THD •Fast dynamic (due to ETO and multilevel)
van
EaN
+_
SaN
Ea2+_
Ea1+_
…
ia
EbN
+_
Eb2+_
Eb1+_
…
ib
EcN
+_
Ec2+_
Ec1+_
…
ic
vbn vcn
a b c
n
va1+_va1+_
va2+_va2+_
vaN+_vaN+_
vb1+_vb1+_
vb2+_vb2+_
vbN+_vbN+_
vc1+_vc1+_
vc2+_vc2+_
vcN+_vcN+_
S11
S13
S12
S14
HBBB
ETO-Based HBBB Prototype
Specification :• Main Devices : 4kA/4.5kV ETO
• di/dt Limitation : 200 A/µs• Bus Voltage : 2 ~ 2.5 kV
• Voltage Ripple : 10%• Output RMS Current : 1.25 kA• Switching Frequency : Up to 2 kHz• Power Capacity : 1.5 MVA (3 MVA pulse)• Cooling System : Water
System Demonstration: ETO DSTATCOM
ETO voltage(2 kV/Div)
ETO current(1 kA/Div)
HBBB Output Current(500 A/Div)
Energy Storage System Demonstration Program
N
HBBBa HBBBb HBBBc
Ultra CAP (EPRI-PEAC)
Infinite Bus Load
PCC
3-phase coupling inductor or transformer
VA VB VC
•Three HBBBs forms a 4.5 MVA three-level VSC DSTATCOM•Can be used for real and reactive power support
Modular Digital Control Architecture
DSPMaster
Controller
HBBBCBi-directional Optical Signal
AC Protection and Start-up
AC Protection and Start-up
VpccMeasurement
VpccMeasurement
Key features of the control:
• HBBB provides modular power converter design• Ring structure provides modular control design• Allow easy expansion of # of levelsand # of FACTS nodes• All switching and measurement signals are transferred using one single optical fiber(+backup)• Better performance, more reliability, and cost effective
HMHM HMHM HMHM
DSPMaster
ControllerFPGA Local controller (under development)
Simulation Results of Real Power Compensation
Output Current
VPCC
Output voltage
+ Real power - Real power
ConclusionsThree key enabling technologies are developed at Virginia Tech
•Advanced switch technology (ETO)4000A snubberless turn-off capabilityLow cost resulting from use of conventional GTOVery low control powerContinuous & sustained operation at 1 kHz and Tj,max >125 oC is
demonstratedGen-4 will be developed in FY2003
•Advanced modular converter technology (HBBB)•Advanced modular digital controller technology
These technologies will enable low cost, advanced ESS implementation
DSTATCOM with energy storage are being developed
ETO commercialization and insertion are underway
Acknowledgment
• The ETO switch and system development are funded by DOE and managed by SNL through the ESSP, and by Tennessee Valley Authority .
• Supports from American Competitiveness Institute, ONR & NSWC are gratefully acknowledged.
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