detector developments in atomki g. kalinka, institute of nuclear
Post on 01-Jan-2017
218 Views
Preview:
TRANSCRIPT
Detector developments and investigation of radiation damage in semiconductor detectors in the
Institute of Nuclear Research of HAS (ATOMKI), Debrecen
Gabor Kalinka
Semiconductor detector development between 1971-90 concentrated around Si(Li) X-ray detectors and complete X-ray spectrometers. Nowadays - in collaboration with Japanese partners - Si pin and SDD detectors, and HgI2planar detectors, all for X-ray detection, are under construction.
Scintillation charged particle detector systems using CsI(Tl) crystals coupled to Si pin photodiodes has been developed for nuclear physics (European, Japanese and South-African collaborations), while systems using LSO/LYSO crystals combined with Position Sensitive Photoelectron Multipliers are being developed for gamma-ray detection in Positron Emission Tomography (PET).
Detector radiation damage studies started very recently in ATOMKI with the increased use of Si pin photodiodes in conjunction with particle accelerators.
Semiconductor detector developmentionizing radiation: e-h pair creation in reverse biased diode structures,
charge collection, integration, signal shaping (noise filtering), amplitude measurement
P-N detectorThin sensitive volume:• low X/gamma efficiency• large capacitance → noise
P-I-N detector, e.g. Si(Li)Thick sensitive volume:• higher efficiency• lower capacitance• better energy resolution
X-ray spectrometer developed at ATOMKI between 1971-1980 : Si(Li) detector, liquid nitrogen cooling, pulsed drain feedback preamplifier, time variant (1980) and digital (1989) signal processing150 eV FWHM , ~80 units sold between 1978-1992 to COMECON countries
High vacuum dewar Si(Li) detectors (1988)in cooperation with Tesla, Brno (Czechoslovakia)
ATOMKIDebrecen
1986: XRF laboratory, Havanna
1990: Detector laboratory, Osaka
1991: end of Si(Li) era, ATOMKI“detector clinics”
136 eV FWHM
Microelectronics: advanced p-n or p-i-n detector (photodiode)3-4 orders of magnitude (!) lower current → moderate cooling
~ 100-800 µm thickness, X-ray energy 1-20 keVGood Si(Li) detectors have still been the standard!
Hamamatsu S1223 photodiode
2.4 x 2.8 x 0.2 mm3
Room temperature X-ray detectionwith Si-pin photodiodes
S58af6.spm (1551.17 - 7330.02)
Energie
Con
tenu
s de
cana
ux
1600 2100 2600 3100 3600 4100 4600 5100 5600 6100 6600 7100
2357
10
2030
5070
100
200300500700
1000
20003000
50007000
FWHM=440 eV @ 5.9 keV FWHM=580 eV @ 60 keV
Fe-55 Am-241
Semiconductor Drift Detector (SDD)1984, Gatti, Rehakvery small anode, very small capacitance, excellent resolution
Principle of the sideward depletion
N+ N P+
Partial depletion
Full depletion
Realization of a circular drift detector
AMPTEK (USA) pin detector-30 oC, 150 eV, 3000 USD
KETEK (Germany.) drift-detector -30 oC, 125 eV, 10000 EU
Aim: construction of similar pin/SDD detector unitsInternational collaboration with Osaka Electro-Communication University and a Japanese Semiconductor Company
Prototype Si pin/SDD detector(radiation entrance side)
HgI2 detector development
single crystal from Constellation Technology, Florida50 mm2 area, 1 mm thickness
- HV side irradiation + HV side irradiationElectron traversal Hole traversal
Scintillation detector developments (1991-) - CsI(Tl) scintillator (550 nm) + Si pin photodiodes- LSO scintillator (420 nm) + PMT
Scintillation charged particle detector systems developed by ATOMKIusing multilayer polymer mirror reflector wrapping based on
Giant Birefringent Optics
100 element CsI(Tl) + Si pin photodiode detector system (DIAMANT + ChessBoard) for EUROBALL, (France, Italy)EXOGAM (Ganil, France) AFRODITE (iThemba, South Africa)Collaboration with CENBG, Bordeaux; MSI, Stockholm; INFN, Napoliscintillator : 14 x 14 x 3 mm3
photodiode : 10 x 10 mm2
for ~ 30 MeV/ amu particlesDedicated preamplifiers and highly integrated dedicated electronics in VXI-standardExcellent energy- and particle-resolution (~ 2 times better than that of counterpart Microball at Gammasphere)
300 element CsI(Tl) + Si pin photodiode detector system (GRACIA) for RIBF at RIKEN (Japan)Collaboration with Riken and Rikkyo Universityscintillator : 16 x 16 x 55 mm3
photodiode : 10 x 10 mm2
for ~ 130 MeV/ amu particlesDedicated preamplifiers, (yet) standard signal processing electronicsPerformance is only a little bit inferior to the DIAMANT system (det. size 24x larger !)
The DIAMANT charged particle detector system built into the target chamber of the EUROBALL gamma-detector system (Strasbourg, 2004)
The electronic units for processing scintillation detector signals synchronously with Germanium detector signals has also been developed in ATOMKI (not shown in the photo).
The forward hemisphere of DIAMANT detector system together with mounted preamplifiers inside the target chamber
Energy resolving capability of DIAMANTscintillationdetectors (low energy alpha spectrum of U-232)
Particle resolving capability of DIAMANT scintillation detectors (low energy region < 50 MeV)
Particle Energy (arb. unit)
PROTONS
EUROBALL + DIAMANT with VXICommissioning Experiment; April 2000
170Er + 30Si (165 MeV)
DEUTERONS
ALPHAS
Pulses from PIN-diodes
Part
icle
Typ
e
Part of the 300 element (detectors packed in quad units) CsI(Tl)+Si pin photodiode charged particle detector system GRACIA at RIKEN RARF
Detector blocks for small animal PET systems
• Crystal type: LSO scintillator• Crystal size: 2X2X10 mm3
• 8x8 crystal matrix unit• Lumirror light reflector• Position Sensitive PhotoMultiplier Tube• Recently: 33x33 matrix unit of
1.4x1.4x12.5 mm3 LYSO crystals16x16 anode PSPMT
Radiation damage researchDetector radiation damage studies started very recently in ATOMKI with the increased use of Si pin photodiodes in conjunction with particle accelerators. Preliminary results has been obtained with 5.5 MeValpha particle irradiation from Am-241 isotope, with 6.5 MeV oxygen, 2.15 MeV lithium, 0.43 MeV hydrogen ions (both with 5 um range in Si), and 2 MeV protons (50 um range). Photodiodes irradiated uniformly were characterized by I-V and C-V techniques and charge collection measurements with 5.5 MeV alpha particles. Diodes irradiated with a patterned way were evaluated with Ion Beam Induced Charge (IBIC) method, using µm focussed beam of the same particle at the same energy as during irradiation either online or offline.
10-4 10-3 10-2 10-1 100 101 10210-2
10-1
100
101
102
103
104
105
Reverse bias voltage [V]
Leak
age
curre
nt [p
A]
S5821 diode at 22 degrees centigrade
Summary of I-V plots versus 5.5 MeV alpha fluenceup to 1x1011 cm-2 (generation centers)
Leak
age
cur
rent
[pA
]]
C-V plots versus fluence of 5.5 MeV alpha(ionized impurity centers)
10-2 100 102100
101
102
Reverse bias voltage [V]
Cap
acita
nce
[pF]
S58F diode irradiated by 0/0.05/1.05*10^11/cm2 5.5 MeV alpha
D
biRS
NUU
qW )(2 +
=ε
WAC Sε=
if Nd= const.
virgin
5x109 cm-2
1x1011 cm-2
Cap
acita
nce
[pF]
CCE measurement with 5.5 MeV alpha particles after different fluences of 5.5 MeV alpha particles
(trapping and/or recombination centers)
0 0.2 0.4 0.6 0.8 15350
5400
5450
5500
1/(Reverse bias voltage) [1/V]
Pea
k am
plitu
de [k
eV]
S58F diode measured with Am241 alpha following Am241 irradiation
virgin
5x109 cm-2
1x1011 cm-2
Pea
k am
plitu
de [k
eV]
2 MeV H+ irradiation (50 µm range) of 3x3 squares of 100x100 µm2 area in logarithmically evenly spaced fluence steps from 0 to 5x1011 cm-2
0 50 100 150 200 250 3000
50
100
150
200
250
050
100150
200250
300
0
50
100
150
200
250300
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
x 104
Before @ Ud=0 V
After @ Ud=0 V
2 MeV H+ IBIC scan of the irradiation site prior to irradiation at Ud=0 V
Detector material nonuniformity (growth striations)
0.61
0.615
0.62
0.625
0.63
0.635
0.64
0 50 100 150 200 250 3000
50
100
150
200
250
300
0.61
0.615
0.62
0.625
0.63
0.635
0.64
0
100
200
300
0100
200300
0.6
0.61
0.62
0.63
0.64
0.65
Results relevant for detector applications: degradation for the Ud ≥ 10 V case
0.01 0.1 1 10
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
Rel
ativ
e A
mpl
itude
Shi
ft (%
)
Fluence (1011 ion/cm2)
10V 20V 50V 100V
0.01 0.1 1 1010
11
12
13
14
15
16
17
FWH
M (k
eV)
Fluence (1011 ion/cm2)
10V 20V 50V 100V
][][][10)5.03.3(][][10)5.02.2()(
22132215
VUcmVcmcmcmCCE rad
−−−− Φ
×±−+Φ×±=δ
][][
10)5.10.4(][2
5
VUcm
keVrad
−− Φ
×±=∆ 220 rad∆+∆=∆
top related