datasheet - stb47n60dm6ag - automotive-grade n-channel 600 ... · 1 electrical ratings table 1....
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13
TAB
D²PAK
2
D(2, TAB)
G(1)
S(3)AM01475V1
FeaturesOrder code VDS RDS(on) max. ID
STB47N60DM6AG 600 V 80 mΩ 36 A
• AEC-Q101 qualified • Fast-recovery body diode• Lower RDS(on) per area vs previous generation• Low gate charge, input capacitance and resistance• 100% avalanche tested• Extremely high dv/dt ruggedness• Zener-protected
Applications• Switching applications
DescriptionThis high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6combines very low recovery charge (Qrr), recovery time (trr) and excellentimprovement in RDS(on) per area with one of the most effective switching behaviorsavailable in the market for the most demanding high-efficiency bridge topologies andZVS phase-shift converters.
Product status link
STB47N60DM6AG
Product summary
Order code STB47N60DM6AG
Marking 47N60DM6
Package D²PAK
Packing Tape and reel
Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6 Power MOSFET in a D²PAK package
STB47N60DM6AG
Datasheet
DS12070 - Rev 4 - March 2019For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate-source voltage ±25 V
ID Drain current (continuous) at TC = 25 °C 36 A
ID Drain current (continuous) at TC = 100 °C 23 A
ID (1) Drain current (pulsed) 137 A
PTOT Total power dissipation at TC = 25 °C 250 W
dv/dt(2) Peak diode recovery voltage slope 50V/ns
dv/dt(3) MOSFET dv/dt ruggedness 100
TJ Operating junction temperature range-55 to 150 °C
Tstg Storage temperature range
1. Pulse width limited by safe operating area2. ISD ≤ 36 A, di/dt ≤ 800 A/μs, VDS (peak) < V(BR)DSS, VDD = 480 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.5°C/W
Rthj-pcb (1) Thermal resistance junction-pcb 30
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IARAvalanche current, repetitive or not repetitive(pulse width limited by Tjmax)
7 A
EASSingle pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 100 V)700 mJ
STB47N60DM6AGElectrical ratings
DS12070 - Rev 4 page 2/15
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off state
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS= 0 V, ID = 1 mA 600 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 600 V 1 µA
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)100 µA
IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V ±1 µA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3.25 4 4.75 V
RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 18 A 70 80 mΩ
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
- 2350 - pF
Coss Output capacitance - 160 - pF
Crss Reverse transfer capacitance - 2 - pF
Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 416 - pF
RG Intrinsic gate resistance f = 1 MHz open drain - 1.6 - Ω
Qg Total gate charge VDD = 480 V, ID = 36 A,
VGS = 0 to 10 V
(see Figure 14. Test circuit for gatecharge behavior)
- 55 - nC
Qgs Gate-source charge - 12 - nC
Qgd Gate-drain charge - 31 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0to 80% VDSS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD= 300 V, ID = 18 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13. Test circuit forresistive load switching timesand Figure 18. Switching timewaveform)
- 23 - ns
tr Rise time - 5.5 - ns
td(off) Turn-off delay time - 57 - ns
tf Fall time - 9 - ns
STB47N60DM6AGElectrical characteristics
DS12070 - Rev 4 page 3/15
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 36 A
ISDM(1) Source-drain current (pulsed) - 137 A
VSD(2) Forward on voltage ISD = 36 A, VGS = 0 V - 1.6 V
trr Reverse recovery time ISD = 36 A, di/dt = 100 A/µs,
VDD = 60 V
(see Figure 15. Test circuit forinductive load switching and dioderecovery times)
- 115 ns
Qrr Reverse recovery charge - 0.54 µC
IRRM Reverse recovery current - 9.5 A
trr Reverse recovery time ISD = 36 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 15. Test circuit forinductive load switching and dioderecovery times)
- 210 ns
Qrr Reverse recovery charge - 2.1 µC
IRRM Reverse recovery current - 20.4 A
1. Pulse width limited by safe operating area2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A ±30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need foradditional external componentry.
STB47N60DM6AGElectrical characteristics
DS12070 - Rev 4 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
GADG200220171036SOA
10 2
10 1
10 0
10 -1
10 -2
10 -1 10 0 10 1 10 2
ID (A)
VDS (V)
Operation in this area is limited by R DS(on)
T j ≤ 150 °CT c = 25°C
single pulse
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Figure 2. Thermal impedance
Figure 3. Output characteristics
GADG170220171018OCH
120
100
80
60
40
20
00 4 8 12 16
ID (A)
VDS (V)
VGS = 6 V
VGS = 7 V
VGS = 8 VVGS = 9 V
VGS = 10 V
Figure 4. Transfer characteristics
GADG170220171019TCH
120
100
80
60
40
20
04 5 6 7 8 9
ID (A)
VGS (V)
VDS = 20 V
Figure 5. Gate charge vs gate-source voltage
GADG170220171019QVG
600
500
400
300
200
100
0
12
10
8
6
4
2
00 10 20 30 40 50 60
VDS (V)
VGS (V)
Qg (nC)
VDD = 480 VID = 36 A
VDS
Figure 6. Static drain-source on-resistance
GADG170220171016RID
76
74
72
70
68
66
640 6 12 18 24 30 36
RDS(on) (mΩ)
ID (A)
VGS = 10 V
STB47N60DM6AGElectrical characteristics (curves)
DS12070 - Rev 4 page 5/15
Figure 7. Capacitance variations
GADG170220171018CVR
10 4
10 3
10 2
10 1
10 0
10 -1 10 0 10 1 10 2
C (pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Normalized gate threshold voltage vstemperature
GADG191220180856VTH
1.1
1.0
0.9
0.8
0.7
0.6-75 -25 25 75 125
VGS(th) (norm.)
Tj (°C)
ID = 250 µA
Figure 9. Normalized on-resistance vs temperature
GADG191220180856RON
2.5
2.0
1.5
1.0
0.5
0-75 -25 25 75 125
RDS(on) (norm.)
Tj (°C)
VGS = 10 V
Figure 10. Normalized V(BR)DSS vs temperature
GADG191220180856BDV
1.10
1.05
1.00
0.95
0.90
0.85-75 -25 25 75 125
V(BR)DSS (norm.)
Tj (°C)
ID = 1 mA
Figure 11. Source-drain diode forward characteristics
GADG170220171018SDF
1.2
1
0.8
0.6
0.4
0.20 6 12 18 24 30 36
VSD (V)
ISD (A)
TJ = -50 °C
TJ = 25 °C
TJ = 150 °C
Figure 12. Output capacitance stored energy
GIPD280120191305EOS
18
15
12
9
6
3
00 100 200 300 400 500 600
EOSS (µJ)
VDS (V)
STB47N60DM6AGElectrical characteristics (curves)
DS12070 - Rev 4 page 6/15
3 Test circuits
Figure 13. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 14. Test circuit for gate charge behavior
AM01469v1
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST100 Ω
100 nF
D.U.T.
+pulse width
VGS
2200μF
VG
VDD
Figure 15. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 16. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 17. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 18. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STB47N60DM6AGTest circuits
DS12070 - Rev 4 page 7/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
STB47N60DM6AGPackage information
DS12070 - Rev 4 page 8/15
4.1 D²PAK (TO-263) type A2 package information
Figure 19. D²PAK (TO-263) type A2 package outline
0079457_A2_25
STB47N60DM6AGD²PAK (TO-263) type A2 package information
DS12070 - Rev 4 page 9/15
Table 9. D²PAK (TO-263) type A2 package mechanical data
Dim.mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.70 8.90 9.10
E2 7.30 7.50 7.70
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°
Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
STB47N60DM6AGD²PAK (TO-263) type A2 package information
DS12070 - Rev 4 page 10/15
4.2 D²PAK packing information
Figure 21. D²PAK tape outline
STB47N60DM6AGD²PAK packing information
DS12070 - Rev 4 page 11/15
Figure 22. D²PAK reel outline
A
D
B
Full radius
Tape slot in core for tape start
2.5mm min.width
G measured at hub
C
N
40mm min. access hole at slot location
T
AM06038v1
Table 10. D²PAK tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
STB47N60DM6AGD²PAK packing information
DS12070 - Rev 4 page 12/15
Revision history
Table 11. Document revision history
Date Revision Changes
23-Mar-2017 1 Initial release.
12-Apr-2017 2Changed status
Minor text changes.
22-May-2018 3
Removed maturity status indication from cover page.The document status isproduction data.
Modified title and features on cover page.
Minor text changes.
05-Mar-2019 4
Modified Table 1. Absolute maximum ratings.
Modified Section 2 Electrical characteristics and Section 2.1 Electrical characteristics(curves).
Minor text changes.
STB47N60DM6AG
DS12070 - Rev 4 page 13/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 D²PAK type A packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
STB47N60DM6AGContents
DS12070 - Rev 4 page 14/15
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
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Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
STB47N60DM6AG
DS12070 - Rev 4 page 15/15
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