chapter 2 semiconductor power switches
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1
Chapter 2
Semiconductor Power Switches
“Introduction to Modern Power Electronics”, 2nd Ed., John Wiley 2010by
Andrzej M. Trzynadlowski
Chapter 2 2
Waveforms of voltage, current, and power loss in a semiconductor power switch
i
v
T
p = vi
tO N tO FF
t
t
Fig. 2.1
Chapter 2 3
Power diode: (a) semiconductor structure, (b) circuit symbol
ANODE
CATHODE
(a)
p
n
A
(b)
C
V
I
Fig. 2.2
Chapter 2 4
Static voltage-current characteristic of the power diode
I
FMI VFM
VRB
IRM
V
Fig. 2.3
Chapter 2 5
Voltage and current waveforms during the reverse recovery period in a power diode
V
FI
F
i
v
R
V
RMV
rrt
rriI rrM
di rr
dt
t
Fig. 2.4
Chapter 2 6
TABLE 2.1 Example High-Power Diodes
______________________________________________________________________________
Symbol: RDK86040 R7014405 R9G23615 R6031635
(Powerex) (Powerex) (Powerex) (Powerex)
Type: General Purpose General Purpose Fast Recovery Fast Recovery
Case: Disc Stud Disc Stud
VRRM: 6 kV 4.4 kV 3.6 kV 1.6 kV
IF(av): 4 kA 0.55 kA 1.5 kA 0.35 kA
IF(rms): 6.3 kA 0.86 kA 2.35 kA 0.55 kA
IFSM: 60 kA 10 kA 18 kA 6 kA
I2t: 1.5×107 A2s 4.2×105 A2s 1.35×106 A2s 1.5×105 A2s
VFM: 1.65 V 1.2 V 1.65 V 1.5 V
IRRM: 300 mA 50 mA 75 mA 50 mA
trr: 25 µs 15 µs 5 µs 2 µs
Diameter: 132 mm 38 mm 74 mm 27 mm
Height: 38 mm 96 mm 28 mm 79 mm
______________________________________________________________________________
Chapter 2 7
SCR: (a) semiconductor structure, (b) circuit symbol
ANODE
CATH ODE
GATE
p
p
n
n
(a ) (b )
A
C
G
I
V
iG
Fig. 2.5
Chapter 2 8
Static voltage-current characteristic of the SCR
I
VVRB
VFB
FI VTM
IL
IH
iG > 0 iG = 0
Fig. 2.6
Chapter 2 9
SCR gate voltage signals: (a) single pulse, (b) multipulse
vG
t0
(a)
t0
(b)
Fig. 2.7
Chapter 2 10
Anode voltage and current waveforms during forced commutation of the SCR
V
FI
F
i
v
D
t
rrt
VR
V tOFF
Fig. 2.8
Chapter 2 11
TABLE 2.2 Example High-Power SCRs
______________________________________________________________________________
Symbol: 5STP 12N8500 5STP 50Q1800 C770L T7071430
(ABB) (ABB) (Powerex) (Powerex)
Type: Phase Control Phase Control Fast Switching Fast Switching
Case: Disc Disc Disc Stud
VRRM/VDRM: 8 kV 1.8 kV 2 kV 1.4 kV
IT(av): 1.2 kA 6.1 kA 2.1 kA 0.3 kA
IT(rms): 1.88 kA 9.6 kA 3.3 kA 0.475 kA
ITSM: 35 kA 94 kA 38 kA 8 kA
I2t: 6×106 A2s 4.3×107 A2s 6×106 A2s 2.65×105 A2s
VTM: 2 V 1.04 V 1.55 V 1.45 V
IRRM/IDRM: 400 mA/1 A 300 mA 100 mA 30 mA
tON: 3 µs 3 µs 2 µs 3 µs
tOFF: 600 µs 500 µs 100 µs 60 µs
IGT: 400 mA 400 mA 300 mA 150 mA
VGT: 2.6 V 2.6 V 3 V 3 V
Diameter: 150 mm 150 mm 110 mm 38 mm
Height: 35 mm 35 mm 37 mm 106 mm
______________________________________________________________________________
Chapter 2 12
Triac: (a) semiconductor structure, (b) circuit symbol
G A T E
M AIN T E R M IN A L 2
M A IN T E R M IN AL 1
M T 2
M T 1
V
G
Ii G
(a) (b)
n p
n
n p n
Fig. 2.9
Chapter 2 13
GTO: (a) semiconductor structure, (b) circuit symbol
CATH OD E
G ATE
A
C
G
(b )(a )
AN O D E
p
n
pn
Fig. 2.10
Chapter 2 14
Circuit symbol of the IGCT
Fig. 2.11
I
V
A
C
iGG
Chapter 2 15
TABLE 2.3 Example IGCTs
______________________________________________________________________________
Symbol: 5SHY42L6500 5SHY55L4500 5SHX19L6010 5SHX26L4510
(ABB) (ABB) (ABB) (ABB)
Type: Asymmetric Asymmetric Reverse Cond. Reverse Cond.
VDRM: 6.5 kV 4.5 kV 5.5 kV 4.5 kV
IT(av): 1.27 kA 1.86 kA 0.84 kA 1.01 kA
IT(rms): 2.00 kA 2.92 kA 1.32 kA 1.59 kA
ITSM: 26 kA 33 kA 18 kA 17 kA
I2t: 3.38×106 A2s 5.45×105 A2s 1.62×106 A2s 1.45×105 A2s
VTM: 2.0 V 1.15 V 1.9 V 1.8 V
IDRM: 50 mA 50 mA 50 mA 50 mA
tON: 40 µs 12 µs 11.5 µs 11.5 µs
tOFF: 40 µs 15 µs 14 µs 14 µs
IGQM: 4.2 kA 5.5 kA 1.8 kA 2.2 kA
Eoff: 44 J 31.5 J 11 J 12 J
Length: 429 mm 429 mm 429 mm 429 mm
Height: 40 mm 40 mm 40 mm 40 mm
Width: 173 mm 173 mm 173 mm 173 mm
______________________________________________________________________________
IGQM – maximum controllable turn-off gate current, Eoff – turn-off energy per pulse of gate current
Chapter 2 16
BJT: (a) semiconductor structure, (b) circuit symbol
COLLECT OR
EMIT TER
BASE
(a ) (b )
E
C
p
n
nV
IBCE
I
IC
E
B
Fig. 2.12
Chapter 2 17
Static voltage-current characteristic of the BJT
V C E
IC
H A R D S A T UR A T IO N L IN E
Q U A S I-S A T UR A T IO N L IN E
ON
OFF
B
I
Fig. 2.13
Chapter 2 18
Base current and collector current waveforms for turn-on and turn-off of a BJT
IBIB0.9
IB t
i B
iI
I0.9C
CC
IC0.1
0.1
t O FF
tO N
t
Fig. 2.14
Chapter 2 19
BJT Darlington connections: (a) two-transistor, (b) three-transistor
Fig. 2.15
(a) (b)
C
E
B
C
E
B
Chapter 2 20
Power MOSFET: (a) semiconductor structure, (b) circuit symbol
Fig. 2.16
n
p
n
(a) (b)
S O U R C E
D R AIN
G A TE
O X ID E
M E T A L
D
G
S
VD S
ID
Chapter 2 21
Voltage-current characteristics of power MOSFET
Fig. 2.17
CONSTANT RESISTANCE LINES ON
OFF VDS
ID
VGS
Chapter 2 22
TABLE 2.4 Example High-Power MOSFETs
______________________________________________________________________________
Symbol: VMO 650-01F IXFB 100N50P APT45M100J STP4N150
(IXYS) (IXYS) (Microsemi) (STMicroel,)
VDSS: 100 V 500 V 1000 V 1500 V
ID: 690 A 100 A 45 A 4 A
VGS: 20 V 30 V 30 V 30 V
IGS: 0.5 µA 0.2 µA 0.1 µA 0.1 µA
RDS: 1.8 mΩ 49 mΩ 170 mΩ 5 Ω
tON: 500 ns 36 ns 85 ns 35 ns
tOFF: 800 µs 110 ns 285 ns 45 ns
Size: 110×62×30 mm 26×20×5 mm 38×25×12 mm 16×10×5 mm
______________________________________________________________________________
RDS – static drain-source on resistance, IGS – gate leakage current
Chapter 2 23
IGBT: (a) equivalent circuit, (b) circuit symbol
Fig. 2.18
C
E
G
C
G
I
VCE
C
E
Chapter 2 24
Voltage-current characteristics of IGBT
Fig. 2.19
IC
GE
V
ON
OFF
VCE
Chapter 2 25
TABLE 2.5 Example IGBTs
_____________________________________________________________________________
Symbol: 5SNA 2400E170100 5SNA 1500E330300 5SNA 0600G650100
(ABB) (ABB) (ABB)
VCE: 1.7 kV 3.3 kV 6.5 kV
IC: 2.4 kA 1.5 kA 0.6 kA
IFSM: 20 kA 14 kA 6 kA
VCE(sat): 2.6 V 3 V 5.4 V
IGES: 0.5 µA 0.5 µA 0.5 µA
tON: 0.32 µs 0.57 µs 0.57 µs
tOFF: 1.1 µs 1.68 µs 1.86 µs
Size: 190×140×38 mm 190×140×38 mm 190×140×48 mm
_____________________________________________________________________________
VCE(sat) – collector-emitter saturation voltage, IGES – gate leakage current
Chapter 2 26
Safe operating area for a power MOSFET
Fig. 2.20
P E AK -CU R RE NT L IMIT
AVE R AG E -C U RR E N T LIM IT
V
ID
DS
P E AK-VO LTAG E LIM IT
O N -S TATE R ES IS TAN C E L IMIT
t =
t = 0.1 m s
t = 1 m s
SO A
TEMP E R ATU R ELIM IT
Chapter 2 27
TABLE 2.6 Properties and Maximum Ratings of Semiconductor Power Switches
_____________________________________________________________________________
Type Switching Switching Switching Forward Rated Rated Signal Characteristic Frequency Voltage Voltage Current
_____________________________________________________________________________
Diode 20 kHz1 1.2–1.7 V 6.5 kV 10 kA
SCR current trigger 0.5 kHz 1.5–2.5 V 8 kV 6 kA
Triac current trigger 0.5 kHz 1.5–2 V 1.4 kV2 0.1 kA2
GTO current trigger 2 kHz 3–4 V 6 kV 6 kA
IGCT current trigger 5 kHz 3-4 V 6.5 kV 6 kA
BJT current linear 20 kHz 1.5–3 V 1.5 kV 1.2 kA
MOSFET voltage linear 1 MHz 3–4 V 1.5 kV 1.8 kA
IGBT voltage linear 20 kHz 3–4 V 6.5 kV 2.4 kA
______________________________________________________________________________ 1 Fast recovery diodes. General purpose diodes operate at 50 or 60 Hz. 2 BCTs (bi-directionally controlled thyristors), whose operating principle is similar to that of the triac,
reach 6.5 kV of rated voltage and 5.5 kA of rated current.
Chapter 2 28
Example diode and SCR modules
Fig. 2.21
(d)
(c)
(a)
(b)
Chapter 2 29
Example power BJT (Darlington) modules
Fig. 2.22
(c)
(a)
(b)
Chapter 2 30
Example power MOSFET modules
Fig. 2.23
(a)
(b )
(c)
Chapter 2 31
IGBT-based modular frequency changer
Fig. 2.24
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