c -si thin-film cell fabrication
Post on 31-Dec-2015
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c -Si thin-film cell fabrication. c -Si thin-film cell fabrication. p-type, ~4E19 – back-surface field (BSF), 100 nm. p-type, ~5E15 – absorber, 2~3 µm. c -Si. n-type, ~1E20 – emitter, 35 nm. SiNx ARC. GLASS. c-Si thin-film cell fabrication. Solid state crystallisation, 600C, ~25 hrs. - PowerPoint PPT Presentation
TRANSCRIPT
c-Si thin-film cell fabrication
c-Si
SiNx ARC
p-type, ~5E15 – absorber, 2~3 µm
n-type, ~1E20 – emitter, 35 nm
p-type, ~4E19 – back-surface field (BSF), 100 nm
GLASS
c-Si thin-film cell fabrication
• Solid state crystallisation, 600C, ~25 hrs
• Rapid thermal annealing, ~1000C, 1 min
• Hydrogenation, ~600C, 20 min
HH
H
HH H
c-Si thin-film cell fabrication
LOAD
emitter
BSF
Reflector
c-Si thin-film cell fabrication
Borofloat Glass, 3 mm thick
Al line contacts
poly-Si
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