c h a p t e r 5 mos field-effect transistors (mosfets)

C H A P T E R 5

MOS Field-Effect Transistors (MOSFETs)

Figure 5.2 The enhancement-type NMOS transistor with a positive voltage applied to the gate. An n channel is induced at the top of the substrate beneath the gate.

Table 5.1 Regions of Operation of the Enhancement NMOS Transistor

Figure 5.15 Large-signal equivalent-circuit model of an n-channel MOSFET operating in the saturation

Table 5.2 Regions of Operation of the Enhancement PMOS Transistor

Figure 5.28 Biasing the MOSFET amplifier at a point Q located on the segment AB of the VTC.

Figure 5.31 Graphical construction to determine the voltage transfer characteristic of the amplifier in Fig. 5.29(a).

Figure 5.34 Conceptual circuit utilized to study the operation of the MOSFET as a small-signal amplifier.

Figure 5.35 Small-signal operation of the MOSFET amplifier.

Table 5.3 Small-Signal Equivalent-Circuit Models for the MOSFET

Figure 5.43 The three basic MOSFET amplifier configurations.

Figure 5.46 Performing the analysis directly on the circuit diagram with the MOSFET model used implicitly.

Figure 5.61 A sketch of the frequency response of a CS amplifier delineating the three frequency bands of interest.

Figure P5.49

Figure P5.50

c h a p t e r 5 mos field-effect transistors (mosfets)

edition sedrasmith copyright

oxford university press

microelectronic circuits

mosfet slide

saturation slide

mosfet amplifier

smallsignal operation

smallsignal amplifier

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