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Supporting information

Construction of ultrathin 2D/2D g-C3N4/In2Se3 heterojunctions with

high-speed charge transfer nanochannels for promoting

photocatalytic hydrogen production

Shumin Zhang a, b, Difa Xu b, Xiaohua Chen a, *, Shiying Zhang b, *, Changsheng An b, *

a College of Materials Science and Engineering, Hunan University, Changsha, 410082, People's

Republic of China

b Hunan Key Laboratory of Applied Environmental Photocatalysis, Changsha University,

Changsha 410005, Hunan Province, People's Republic of China

Corresponding author

*Xiaohua Chen Tel: +86-13723899609. E-mail: xiaohuachen@hnu.edu.cn.

*Shiying Zhang Tel: +86-731-84261297. E-mail: cdzhangshiying@163.com.

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Figure S1. XRD patterns of In2Se3 before and after calcination.

Figure S2. XRD patterns of prepared samples.

Figure S3. SEM images of prepared samples (a) CNIS-2 (b) CNIS-4 (c) CNIS-10.

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Figure S4. The elemental mapping images of C, N, In and Se in CNIS-6 sample.

Figure S5. XPS survey of g-C3N4, In2Se3 and CNIS-6.

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In

C N

Se

Figure S6. XRD patterns of CNIS-6 before and after reaction.

Table S1 The BET surface area, pore volume and average pore size of prepared samples

BET surface area (m2/g) Pore Volume (cm3/g) Average pore size (nm)

g-C3N4 135.3 0.8 23.5In2Se3 48.0 0.3 25.9

CNIS-2 151.3 0.9 23.8CNIS-4 138.9 0.9 25.7CNIS-6 128.7 0.9 28.5CNIS-10 113.4 0.9 32.4

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