1 advanced sic wafer inspection - fraunhofer

F R A U N H O F E R I N S T I T U T E F O R I N T E G R A T E D S Y S T E M S A N D D E V I C E T E C H N O L O G Y

Fraunhofer IISB

Schottkystraße 10

91058 Erlangen, Germany

Dr. Birgit Kallinger

Phone +49 9131 761 273

birgit.kallinger@iisb.fraunhofer.de

www.iisb.fraunhofer.de

Intego GmbH

Henri-Dunant-Straße 8

91058 Erlangen, Germany

Dr. Steffen Oppel

Phone +49 9131 61082 210

steffen.oppel@intego.de

www.intego.de/en/

ADVANCED SIC WAFER INSPECTIONMulti-Channel Microscope Scanner for SiC Wafers

Tool Features and Benefits

Fast, high-resolution surface inspection system for non-destructive imaging

of defects on and below the SiC wafer surface

SiC substrates, epiwafers and partially processed wafers with 100, 150 or

200 mm diameter

Simultaneous imaging of surface defects in bright field/dark field/transmitted

light (BF/DF/TL) mode and with differential interference contrast (DIC) as well

as structural defects with UV excited photoluminescence (UVPL) imaging

technique without artefacts of wafer chuck

Imaging, classification, and quantification of surface defects, such as

particles, scratches, pits, and structural defects below the wafer surface, e.g.

dislocations and stacking faults

Unique possibilities in UVPL channel:

Different UV wavelengths available from 305 nm to 365 nm for optimal

excitation of the SiC material

Spectroscopic measurements of defects

Adjustable spectral filtering available for special defect selection in UVPL

imaging mode

Detailed dislocation analysis

Fully automated system - including wafer handling, image recording, defect

recognition and classification as well as reporting

CAD-based patterned wafer inspection incl. teaching of new layouts

Suitable also for surface investigations of other semiconductor wafers, such

as Si, Ge, GaN, AlN, AlGaN, GaAs, glass/sapphire wafers, and LiTaO3

1 UVPL image of SiC VDMOS devices

recorded with the new multi-

channel microscope scanner.

1

Surface defects and structural defects in 4H-SiC epiwafers

Test structures after ion implantation Report and statistics (example: bright triangles in UVPL)

DIC (left) and UVPL (right) images of test structures

after N and Al ion implantation with different

energies and doses.

Our services:

Test measurements and tool demonstration

Development of specific measurement conditions und defect quantification routines incl. statistical defect analysis

Validation of measurement results with complementary characterization methods or industrial in-line tools

Service based measurement with feedback loops within a few days

R&D project collaboration

Typical application examples collected with SiC multi-channel inspection: