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Digital Pixel Image Sensors Abbas El Gamal Department of Electrical Engineering Stanford University DPS-02 1

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Page 1: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Digital Pixel Image Sensors

Abbas El Gamal

Department of Electrical Engineering

Stanford University

DPS-02 1

Page 2: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Outline

• Background

• Programmable Digital Camera project

• Digital Pixel Sensor (DPS)

• Applications to Still and Video Imaging:

– Dynamic Range Extension

– Read noise reduction

– Image blur prevention

• Experimental imaging system

• Conclusion

DPS-02 2

Page 3: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Background

• Digital cameras using CCD image sensors are rapidly replacing film and

analog cameras

• CMOS image sensors are emerging as alternative to CCDs:

– low fabrication cost

– low power consumption

– high frame rate non-destructive readout

– camera-on-chip integration

• Enabling new imaging applications:

– PC, web camera

– cell phones and PDAs

– toys and games

– biometrics

– camera arrays and networks

DPS-02 3

Page 4: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Digital Camera Implementations

PC- Board

CCD

Memory ASIC

AnalogProc &ADC

PC- Board

ASIC

MemoryADC &SensorImageCMOS

DColor

Processing

Image Enhancement &Image Compression

Interface

Control &

Image Sensor C

A

(camera-on-chip)digital camera

Single chip

Functional

block diagram

Current implementations Future

DPS-02 4

Page 5: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Image Sensors

• Image sensor consists of:

– 2-D array of pixels, each containing a photodetector and devices

for readout

– circuits at periphery for amplification and readout

• Sensor size ranges from 320×240 (QVGA) for low end PC digital camera

to 7000×9000 for scientific/astronomy applications

• Pixel size ranges from 15×15 µm or more down to to 4×4 µm

DPS-02 5

Page 6: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Interline Transfer CCD Image Sensor

OutputAmplifier

Horizontal CCD

Vertical CCD

Photodiode

Vertical shift

Integration

Time

Operation

Transfer

Horizontal shift

• Collected charge is simultaneously transferred to the vertical CCDs at the

end of integration time and then shifted out via horizontal CCD

• Charge transfer to vertical CCDs simultaneously resets the photodiodes –

electronic shutter

DPS-02 6

Page 7: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

CCD Image Sensors

• Advantage: High quality

– optimized photodetectors (high QE, low dark current)

– low noise and nonuniformity (CCDs do not introduce noise or

nonuniformity)

• Disadvantages:

– inability to integrate other camera functions on same chip with

image sensor

– high power (due to high speed shifting clocks)

– limited frame rate (due to analog serial readout)

DPS-02 7

Page 8: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Analog CMOS Image Sensors

treansistors

Output

Bit

Word

Row

Dec

oder

PhotodetectorPixel:

& Readout

Column Amplifiers/Caps

Column Mux

• Pixel charge/ voltage transferred one row at a time to column

capacitors, then read out using column decoder/ multiplexer

• Row integration times staggerred by row readout time

DPS-02 8

Page 9: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Analog CMOS Image Sensor Pixel Architectures

• Passive pixel (PPS)

– 1 transistor per pixel

– small pixel, large fill factor, but

– slow, low SNR

• Active pixel

– 3-4 transistors per pixel (APS)

– fast, higher SNR, but

– larger pixel, lower fill factor

• As technology scaled to 0.5µm pixel size/fill factor

not a problem – current technology of choice

DPS-02 9

Page 10: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Analog CMOS Image Sensors

• Advantages:

– low power consumption

– high frame rates

– integration

• Disadvantages:

– high noise and nonuniformity due to multiple levels of

amplification (pixel, column, and chip)

– sensitivity to digital noise coupling

– analog circuits performance deteriorates in deep submicron CMOS

DPS-02 10

Page 11: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Stanford Programmable Digital Camera Program

• Industrially funded research project by several companies including

Canon, Agilent, HP, Kodak

• Objective: To develop and implement algorithms, architectures, and

circuits for single chip programmable CMOS digital imaging systems

– to achieve CCD/film quality (or better)

– to enable new applications of digital imaging

• Program directed jointly with Prof. Brian Wandell (psychology)

• 12 PhD students have been supported under the program

DPS-02 11

Page 12: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

PDC Program Main Accomplishments

• Developed the Digital Pixel Sensor architecture – A/D conversion

performed at the pixel level (digital data directly read out of the pixel)

• Prototyped and successfully demonstrated 5 complete DPS chips,

including world’s first 0.35µ and 0.18µ CMOS image sensors

• Demonstarted 10,000 frames/s (1Gpixels/s) operation using our most

recent DPS chip

• Built a complete hardware/software environment for the DPS chips to

explore several novel imaging applications

• Developed methods for analyzing and characterizing image sensor

performance parameters (for PPS, APS, and DPS)

DPS-02 12

Page 13: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

PDC Program Main Accomplishments – contd.

• Developed algorithms to exploit the high speed potential of DPS for high

dynamic range, optical flow estimation, and motion blur prevention

• Developed a camera simulator (from object to color images), used it in

several image sensor studies

• Developed a course on image sensors and digital cameras – lecture notes

available via the class webpage

• Presented and published many papers (available through our webpages:

http://www-isl.stanford.edu/ abbas/group and

http://smartcamera.stanford.edu/pdc.html)

• 5 PhDs completed, several nearing completion

DPS-02 13

Page 14: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Digital Pixel Sensor (DPS)

• ADC per pixel and all ADCs operate in parallel

• Advantages:

– high speed digital readout

– no column read noise or Fixed Pattern Noise

– scales well with CMOS technology

DPS-02 14

Page 15: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Block Diagram of Digital Pixel Sensor

Sense Amplifiers and Latches

Row

Addre

ssD

ecoder

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Pixel

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

Block

DPS-02 15

Page 16: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Transistors Per Pixel as Technology Scales

• DPS Problem: large pixel size

• As technology scales, pixel size approaches limit set by optics and

dynamic range constraints

• Assuming a 5µm pixel at 30% fill factor:

Transistors

YearTechnology (µm)

Digital

Analog

1995 1997 1999 2000 2001 2003 2006 20120.35 0.25 0.18 0.15 0.13 0.10 0.07 0.05

1

2

4

8

16

32

64

128

256

512

DPS-02 16

Page 17: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Pixel-level ADC Architectures

• First order sigma delta modulation (ISSCC’94)

• Multi-channel Bit-Serial ADC (JSSC’99)

• Single-slope bit-parallel ADC (JSSC’01)

DPS-02 17

Page 18: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

MCBS ADC highlights

• Nyquist rate bit serial ADC

• Requires only 1-bit comparator and 1-bit latch per pixel or per group of

neighboring pixels – very simple circuits

• Control signals shared by all ADCs – low pixel FPN

• Supports programmable step size quantization

• Implementation supports autozeroing and electrical testability of all

circuits (except photodiodes)

DPS-02 18

Page 19: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

How 1-bit Comparator/Latch Works

input1

input2

RAMP

RAMP

BITX

BITX

LSB

S

S

comparatorlatch

OUT

Time

D

G

Q

1

1

1

11

0

0

0

00 0

18

38

58

78

DPS-02 19

Page 20: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

640 × 512 DPS Chip Characteristics (Yang ISSCC’99)

• 0.35µm CMOS technology

• 640 × 480 pixels (VGA)

• 10.5µ × 10.5µ pixels

• 22 transistors per 2×2 pixel

block

• 1 million transistors

• 8 bit MCBS pixel level ADC

• 32 wide digital output bus

• < 100 frames/s

DPS-02 20

Page 21: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

High Speed DPS Chip Goals

• Demonstrate high speed advantage of DPS

– first imager to achieve 10, 000 frames/s and 1 Gpixels/s continuous

imaging

• Demonstrate the scaling advantage of DPS

– first imager built in state of the art (0.18µm) CMOS technology

• Demonstrate DPS with bit-parallel ADC and pixel level digital memory –

earlier implementations (Fowler ‘94, Yang ‘99) employed bit-serial ADCs

• Explore applications of high speed imaging to digital still and video

imaging

DPS-02 21

Page 22: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

DPS Chip Characteristics (Kleinfelder ISSCC‘01)

• 0.18µm CMOS technology

• 352 × 288 pixels (CIF)

• 9.4µ × 9.4µ pixels

• 37 transistors/pixel

• 3.8 million transistors

• 8 bit single slope ADC and

memory/ pixel

• 64 wide digital output bus

at 167 MHz

DPS-02 22

Page 23: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

ADC Operation

DPS-02 23

Page 24: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Still Image at 1,000 FPS

DPS-02 24

Page 25: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Video Sequence at 10,000 FPS

Frame 1 Frame 11

Frame 21 Frame 31

DPS-02 25

Page 26: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

High Frame Rate Enables New Applications

• High frame rate enables new still and video imaging applications:

– Dynamic range extension

– Motion blur prevention

– Motion estimation

– Video compression

– Video stabilization

– Feature tracking

– Super-resolution

• Integration of capture and processing on same chip enables low cost

implementation of such applications

DPS-02 26

Page 27: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Basic Idea – Multiple-Capture Single-Image

TimeHigh frame rate capture Standard frame rate output

+Output video

Application specificoutput data

Processing

• Operate the image sensor at high frame rate

• Process high frame rate data on-chip

• Output still or video images with any application specific data at

standard frame rate

DPS-02 27

Page 28: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

High Dynamic Range Imaging Problem

• Some scenes contain very wide range of illumination with intensities

varying over 100dB range or more

• Biological vision systems and silver halide film can image such high

dynamic range scenes with little loss of contrast information

• Dynamic range of solid-state image sensors varies over wide range:

high end CCDs > 78dB

consumer grade CCDs 66dB

consumer grade CMOS imagers 54dB

• So, except for high end CCDs, image sensor dynamic range is not high

enough to capture high dynamic range scenes

DPS-02 28

Page 29: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Example

HDR Scene

Short Exposure-time Image Medium Exposure-time Image Long Exposure-time Image

DPS-02 29

Page 30: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Extending Dynamic Range via Multiple Capture

• Sensor dynamic range is the ratio of:

– highest nonsaturating signal – limited by well capacity, to

– smallest detectable signal – limited by read noise

• Short exposure time increases highest signal

• Long exposure time reduces smallest signal

• In scene with high lights and dark shadows, need spatially varying

exposure time

• Idea: Capture several images with different exposure times – combine

them into high dynamic range image

– need high speed readout

DPS-02 30

Page 31: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Multiple Capture Example

T 2T 4T

8T 16T 32T

DPS-02 31

Page 32: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

HDR Image Synthesis

Last-Sample-Before-Saturation (LSBS) Algorithm: For each pixel use an

appropriately scaled version of its last sample before saturation

DPS-02 32

Page 33: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Limitation of LSBS Algorithm

• For a given maximum exposure time, it only enhances dynamic range at

high illumination

– Read noise is not reduced

• Increasing maximum exposure time limited by motion blur

Input Short exposure Long exposure

DPS-02 33

Page 34: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Decreasing Read Noise (Liu SPIE’01)

• Estimate each pixel’s signal using all its captured values (before

saturation)

– Weigthed averaging reduces read noise – extends dynamic range

and improves SNR at low illumination

• Developed a pixel-wise recursive estimation algorithm for reducing read

noise

– low computational complexity and small memory

– well suited to camera-on-chip implementation

DPS-02 34

Page 35: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Optimal Weights

0 5 10 15 20 25 30 350

0.02

0.04

0.06

0.08

0.1

0.12

k

ak

• 32 samples

• iph = 5fA

• idc = 1fA

• σV = 60e−

Longer exposure time samples weighted higher than shorter exposure

time samples

DPS-02 35

Page 36: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Read Noise Reduction

0 5 10 15 20 25 30 3515

20

25

30

35

40

45

50

55

60

65

Without estimation

With estimation

Number of Samples k

Rea

dN

oise

RM

S(e

-)

DPS-02 36

Page 37: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Dynamic Range and SNR Improvements

10−2

10−1

100

101

102

103

104

0

10

20

30

40

50

60SN

R(d

B)

iph (fA)

Estimation & LSBSSingle Capture

DR=47dB

DR=85dB

DPS-02 37

Page 38: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Image Blur Prevention (Liu ICASSP‘01)

• For each pixel:

Initial Estimate

Next sample

Yes

No

Saturation or Motion

detected?

Update Estimate

End

End

• Method is pixel-wise and recursive

– small memory, independent number of captures

– low computational complexity

– well suited to camera-on-chip implementation

DPS-02 38

Page 39: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Motion Blur Prevention Example

Initial position Final position

Conventional sensor Our Method

DPS-02 39

Page 40: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Blur Prevention Used to Increase Exposure Time

Input Short exposure

Long exposure Our Method

DPS-02 40

Page 41: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Optical Flow Estimation via Multiple Capture

• Optical flow examples:

• Applications:

– Compression

– 3D motion and structure estimation

– Video stabilization

– Tracking

• Accuracy is of primary concern

DPS-02 41

Page 42: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Simulation Results (Suk Hwan ICIP’01)

• Synthetic sequences (30 and 120 frames/s) are generated by image

warping

• Average angular error results:

Scene LK at 30 frames/s Our method at 120 frames/s

1 4.43◦ 3.43◦

2 3.94◦ 2.91◦

3 4.56◦ 2.67◦

• Gain FPN correction (SukHwan SPIE’02)

DPS-02 42

Page 43: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Experimental High Speed Imaging System

• Built around our 10,000 frames/s DPS chip

• Interfaced to PC

• Programmable via Matlab interface

DPS-02 43

Page 44: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

65 Image Capture Example

0ms 10ms 20ms

30ms 40ms 50ms

DPS-02 44

Page 45: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

High Dynamic Range Image Synthesis

LSBS Estimation/ Motion Detection

DPS-02 45

Page 46: Abbas El Gamal Department of Electrical Engineering Stanford Universityisl.stanford.edu/~abbas/group/papers_and_pub/louisiana.pdf · 2002-05-06 · Department of Electrical Engineering

Conclusion

• Described Digital Pixel Sensor architecture and example implementations

• Presented applications of high speed imaging to still and video rate

imaging

• Showed results that demonstrate the effective implementation of these

applications using DPS

• Example of interdisciplinary research (circuit design, imaging, signal and

video processing)

• Current research: Explore new applications of CMOS image sensors to:

– biology

– 3D imaging

– biometrics

DPS-02 46