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2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

KSA1015

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted

Electrical Characteristics Ta=25C unless otherwise noted

hFE Classification

Symbol Parameter Ratings Units

VCBO Collector-Base Voltage -50 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -150 mA

IB Base Current -50 mA

PC Collector Power Dissipation 400 mW

TJ Junction Temperature 125 C

TST9 Storage Temperature -65 ~ 150 C

Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -50 V

BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -50 V

BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V

ICBO Collector Cut-off Current VCB= -50V, IE=0 -0.1 A

IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 A

hFE1hFE2

DC Current Gain VCE= -6V, IC= -2mA

VCE= -6V, IC= -150mA

70

25

400

VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.1 -0.3 V

VBE (sat) Base-Emitter Saturation Voltage IC= -100mA, IB= -10mA -1.1 V

fT Current Gain Bandwidth Product VCE= -10V, IC=-1mA 80 MHz

Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 4 7 pF

NF Noise Figure VCE= -6V, IC= -0.1mA

f=100Hz, RG

=10k

0.5 6 dB

Classification O Y GR

hFE1 70 ~ 140 120 ~ 240 200 ~ 400

KSA1015

LOW FREQUENCY AMPLIFIER Collector-Base Voltage : VCBO= -50V

Complement to KSC1815

1. Emitter 2. Collector 3. Base

TO-921

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2002 Fairchild Semiconductor Corporation

KSA1015

Rev. A3, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -200

-5

-10

-15

-20

-25

-30

-35

-40

-45

-50

IB = -400A

IB = -350A

IB = -300A

IB = -200A

IB = -150A

IB = -100A

IB = -250A

IB = -50A

IC[mA],COLLECTORCURREN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -1001

10

100

1000

VCE = -6V

hFE,DCCURRENTGAIN

IC[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100-0.01

-0.1

-1

-10

VCE(sat)

IC=10IB

VBE(sat)

VBE(sat)[V],VCE(sat)[V],SATURATIONVOLTAGE


-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2-0.1

-1

-10

-100

VCE=-6V

IC[mA],COLLECTORCURRENT

VBE(sat)[V], BASE-EMITTER VOLTAGE

-1 -10 -1001

10

f=1MHz

IE=0

Cob[pF],CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

-1 -1010

100

1000

VCE

=-6V

hFE

,DCCURRENTGAIN


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0.46 0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 0.20]

1.27TYP

[1.27 0.20]

3.60 0.20

14.470.40

1.020.10

(0.25)

4.580.20

4.58+0.250.15

0.38+0.100.05

0.38

+0.10

0.05

TO-92

Package Dimensions

KSA1015

Dimensions in Millimeters

2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

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2002 Fairchild Semiconductor Corporation Rev. I1

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Product ion This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains speci fications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

FACT

FACT Quiet series

FAST

FASTr

FRFET

GlobalOptoisolator

GTO

HiSeC

I2C

ImpliedDisconnect

ISOPLANAR

LittleFET

MicroFET

MicroPak

MICROWIRE

MSX

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OCX

OCXPro

OPTOLOGIC

OPTOPLANAR

PACMAN

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Power247

PowerTrench

QFET

QS

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RapidConfigure

RapidConnect

SILENT SWITCHER

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SPM

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SyncFET

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TruTranslation

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VCX

ACEx

ActiveArray

Bottomless

CoolFET

CROSSVOLT

DOME

EcoSPARK

E2CMOS

EnSigna

Across the board. Around the world.

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Programmable Active Droop

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