a fast area efficient sense-amp (case study)janakiraman/courses/ee6361/jan-2020/... · 2020. 4....
TRANSCRIPT
![Page 1: A Fast Area Efficient Sense-Amp (Case Study)janakiraman/courses/EE6361/Jan-2020/... · 2020. 4. 21. · Slide 1 A Fast Area Efficient Sense-Amp (Case Study) G. Fredeman et al., “A](https://reader035.vdocuments.mx/reader035/viewer/2022071402/60f0e317a86183088e78bf15/html5/thumbnails/1.jpg)
Slide 1
A Fast Area Efficient Sense-Amp (Case Study)
G. Fredeman et al., “A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access,” in IEEE Journal of Solid-State Circuits, vol. 51, no. 1, pp. 230-239,
Jan. 2016. doi: 10.1109/JSSC.2015.2456873
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q By default the Sense Amp reads a 0
q Access transistor has to pull the LBL HIGH to read 1
q Asymptotic charge up to High since Vgs keeps reducing
q Very slow by nature
q Need to minimize the WLs per BL(33) for performance reasons
q Cannot pre-charge LBL to High
q Floating Body Effect affects retention
q NMOS (Access Device) is very fast when pulling down to zero
q Can we make a Sense Amp that reads a one by default?
q This will allow more WLs per BL
Problems with Micro Sense Amp
Slide 2
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Introduction of eDRAM Slide 3
LBL Pre-charge vs Pre-discharge
0
0.5
1
1.5
2
2.5
32 64 96 128
Read
Tim
e(au
)
# Cells per BL
BL-pre-discharged
BL-pre-charged
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4 19-Apr-18
Basic Structure
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
SA – M2
Right-LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
Left-LBL
MUX
WL0
WL1
Animation
Pre-charge OFF
Pre-charge OFF
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5 19-Apr-18
SETP
BS
SAn
WDL
WDLn
66 DRAM Cells
Cell
Bloc
ks
BLPR
E<1>
BL
MU
X<1>
BLPR
E<0>
BLM
UX<
0>
M2 SA
LS4
MUX
2X BL per Sense Amp
PC
LBL
M1 Local
Bit-Line SETPn
SAPRE
MUX VBLH
LVT
LVT
Read Data Mux
VBLH
BSn
VBLH
VBLH
XLDT
RDMPRE
VBLH
VBLH
RDL
LDTn
LS1 LS2 LS3
LDT
Sense Amp
HVT pFET’s
RVT nFET’s
REn
LS0
LS5 LS6 LS7
HVT
3
Gated Feedback Sense Amp
![Page 6: A Fast Area Efficient Sense-Amp (Case Study)janakiraman/courses/EE6361/Jan-2020/... · 2020. 4. 21. · Slide 1 A Fast Area Efficient Sense-Amp (Case Study) G. Fredeman et al., “A](https://reader035.vdocuments.mx/reader035/viewer/2022071402/60f0e317a86183088e78bf15/html5/thumbnails/6.jpg)
Gated Feedback Sense Amp – Construction
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
WL<0>
Animation
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
WL<0>
READ-1 READ-0
SA – M2 SA – M2
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Gated Feedback Sense Amp – Construction
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
Animation
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node WL
LBL
LBL
MUX
WL0
WL1
WL<0>
READ-1 READ-0
SA – M2 SA – M2
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
Node BL
MU
X
LBL
SA
WL0
Animation
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node WL
LBL
LBL
MUX
WL0
WL1
WL<0>
Node BLM
UX
LBL
SA
WL0
READ-1 READ-0
SA – M2 SA – M2
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
Node BL
MU
X
LBL
SA
WL0
Animation
SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node WL
LBL
LBL
MUX
WL0
WL1
WL<0>
Node BLM
UX
LBL
SA
WL0
READ-1 READ-0
R0 R1
SA – M2 SA – M2
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
Node BL
MU
X
LBL
SA
WL0
Animation
VBLH
R0
R1 VIH
VIL
SA
Gated Feedback Sense Amp – Construction
VM
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH
IOFF
SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH
ISTACK-OFF
REn
SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH REn
VBLH VBLH
SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH REn
VBLH VBLH
SETPn
SA
Gated Feedback Sense Amp – Construction
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SAPRE
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH REn
VBLH VBLH
SETPn
Timing of SETPn is critical
Node BLM
UX
LBL
SA
WL0 SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH REn
VBLH VBLH
SETPn
IOFF
SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH REn
VBLH VBLH
SETPn
ISTACK-OFF
SETP
SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
LBL
MUX
WL0
WL1
Animation
VBLH
VBLH REn
VBLH VBLH
SETPn
SETP
Cannot combine SA’s to connect to the next hierarchy of SA – Need a wired OR output
SA
Gated Feedback Sense Amp – Construction
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SAPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
LBL
MUX
WL0
WL1
WL6
5
Animation
VBLH
VBLH REn
VBLH VBLH
SETPn
SETP
You can now WIRE OR LDT nodes!
LDT LDT
LS = Colum Select Signal
SA
Gated Feedback Sense Amp – Construction
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20 19-Apr-18
Read Operation
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
LDT
REn
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
SA-M2
LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
LBL
MUX
WL0
WL1
VBLH
VBLH
LDT
LS0
Animation
Pre-charge OFF
Pre-charge OFF
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21 19-Apr-18
Read Operation
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
LDT
REn
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
M2 SA
LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
VBLH
VBLH
LDT
LS0
Animation
Turn ON WL
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22 19-Apr-18
Read Operation
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
LDT
REn
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
M2 SA
LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
VBLH
VBLH
LDT
LS0 Node
BLM
UX
LBL
SA
WL0
Animation
Turn ON BLMUX
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23 19-Apr-18
Read Operation
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
LDT
REn
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
M2 SA
LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
VBLH
VBLH
LDT
LS0 Node
BLM
UX
LBL
SA
WL0
Animation
Turn ON Read Header
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24 19-Apr-18
Read Operation
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
LDT
REn
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
M2 SA
LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
VBLH
VBLH
LDT
LS0 Node
BLM
UX
LBL
SA
WL0
Animation
Turn ON Write-back
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25 19-Apr-18
Read Operation
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
LDT
REn
BLPRE<0>
BLMUX<0>
LBL
MUX
WL0
WL1
WL6
5
BLPRE<1>
BLMUX<1>
M2 SA
LBL
M1 Local
Bit-Line
MUX
WL6
6
WL6
8
WL1
31
Node
WL
LBL
LBL
MUX
WL0
WL1
WL<0>
VBLH
VBLH
LDT
LS0 Node
BLM
UX
LBL
SA
WL0
Animation
Turn ON Column Select
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26 19-Apr-18
Column Read Refresh
Read Data Mux
VBLH
RDL
LDTn
LDT
RDMPRE
VBLH
BLPRE<0>
BLMUX<0>
LBL0
MUX
WL0
BLPRE<0>
BLMUX<0>
LBL1
MUX
SA 0
SA 1
LS0
LS1
WL1
WL6
5
SAPRE, SETPn, SETP, REn
SA0
SA1
Other columns automatically get refreshed
LS7
Dynamic MUX
Static Inverter with weak pre-charge
Dyn
amic
INV
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27 19-Apr-18
Read Data Mux
Read Data Mux
VBLH
RDL
LDTn LDT
RDMPRE
VBLH
LS0
LS1
LS7
Dynamic MUX
Static Inverter with weak pre-charge
Dyn
amic
INV
SAn<0>
SAn<1>
SAn<7>
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Combining RDM’s- Dynamic NOR Gate
RDL (Read Data)
JSSC11
Global Data (M4)
JSSC11
DSA<0>
RDL (Read Data)
DSA<N-1>
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Introduction of eDRAM Slide 29
Area Savings and Comparison with 3T uSA
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30 19-Apr-18
Write Operation
BLPRE<0>
BLMUX<0>
LBL
WL0
WL1
WL6
5
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
REn
3
MUX
VBLH
VBLH
3
BS
WDL
WDLn
BSn
VBLH
Animation
Pre-charge OFF
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Write Operation
BLPRE<0>
BLMUX<0>
LBL
WL0
WL1
WL6
5
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
REn
3
MUX
VBLH
VBLH
3
BS
WDL
WDLn
BSn
VBLH
Animation
Turn ON Column Switch
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32 19-Apr-18
Write Operation
BLPRE<0>
BLMUX<0>
LBL
WL0
WL1
WL6
5
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
REn
3
MUX
VBLH
VBLH
3
BS
WDL
WDLn
BSn
VBLH
WL<1>
Animation
Turn ON the WL
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33 19-Apr-18
Write Operation
BLPRE<0>
BLMUX<0>
LBL
WL0
WL1
WL6
5
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
REn
MUX
VBLH
VBLH
BS
WDL
WDLn
BSn
VBLH
WDLn WDL Operation
0 0 Write 1
0 1 Illegal
1 0 No op
1 1 Write 0
WL<1>
Animation
Turn ON BLMUX
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34 19-Apr-18
Write Operation
BLPRE<0>
BLMUX<0>
LBL
WL0
WL1
WL6
5
SETP
SAn
SETPn SAPRE
VBLH
VBLH
VBLH
REn
MUX
VBLH
VBLH
BS
WDL
WDLn
BSn
VBLH
WL<1>
Animation
Turn ON read header
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35 19-Apr-18
Write Operation
BLPRE<0>
BLMUX<0>
LBL
WL0
WL1
WL6
5
SETP
SAn
SETPn SAPRE
VBLH
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WL<1>
Animation
Turn ON Write-back
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36 19-Apr-18
One Data Line Organization
• Single bit can be read out/ written into by selecting one of 128 rows and one of 8 columns
• The components are sized and arranged to make the layout nice and rectangular
• Repeat this structure as many as there are Data-lines
WL0-63 WL127-64
DSA
SA0
2 VWL (D
umm
y)
2 VWL (D
umm
y)
2 VWL (D
umm
y)
2 VWL (D
umm
y) RED
WL<0:1>
REDW
L<3:2>
RIGHT_LBL<1> RIGHT_LBL<0>
LEFT_LBL<1> LEFT_LBL<0>
SA2
SA4
SA6
SA1
SA3
SA5
SA7
LEFT_LBL<3> LEFT_LBL<2>
LEFT_LBL<5> LEFT_LBL<4>
LEFT_LBL<7> LEFT_LBL<6>
RIGHT_LBL<3> RIGHT_LBL<2>
RIGHT_LBL<5> RIGHT_LBL<4>
RIGHT_LBL<7> RIGHT_LBL<6>
LBL MUX LBL MUX
GN
D
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14nm FinFET Advantage
14nm Access Device is 2.5X stronger than the 22nm planar device due to • 50% more effective width • 42% shorter channel length • Lower target Vth Lower VT variation due to undoped channel
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Lower Vth Variation Effect on Retention
• Write a 1 into all the cells • Read the cells after a pause time • Ideally (with no local variations) there should be an step jump in the #fail
• With variations, steeper the slope lesser the variations
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Conclusion • Pulling more DRAM cache (L2,L3) inside the
processor improves overall performance • eDRAM design using logic process is a
challenge • Case study is done, covering many of the
eDRAM design aspects • Sense amp has to read a 1 by default to
provide performance improvement – Achieved in the Gated Feedback Sense Amp
39
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References Matick, R. et al., “Logic-based eDRAM: Origins and Rationale for Use,” IBM J. Research Dev., vol. 49, no. 1, pp. 145-165,
Jan. 2005. Barth, J. et al., “A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier,”
ISSCC Dig. Tech. Papers, pp. 486-487, Feb. 2007. Barth, J. et al., “A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro
Sense Amplifier,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 1, JANUARY 2008. Barth, J. et al., “A 45nm SOI Embedded DRAM Macro for POWER7TM 32MB On-Chip L3 Cache,” ISSCC Dig. Tech. Papers, pp.
342-3, Feb. 2010. Barth, J. et al., “A 45 nm SOI Embedded DRAM Macro for the POWER™ Processor 32 MByte On-Chip L3 Cache,” IEEE
JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 1, JANUARY 2011. S. Iyer et al., “Embedded DRAM: Technology Platform for BlueGene/L Chip,” IBM J. Res. & Dev., Vol. 49, No. 2/3, MARCH/
MAY 2005, pp.333-50. Barth, J. et al., “A 300MHz Multi-Banked eDRAM Macro Featuring GND Sense, Bit-line Twisting and Direct Reference Cell
Write,” ISSCC Dig. Tech. Papers, pp. 156-157, Feb. 2002. Barth, J. et. al., “A 500-MHz Multi-Banked Compilable DRAM Macro With Direct Write and Programmable Pipelining,” IEEE
JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 1, JANUARY 2005. Butt,N., et al., “A 0.039um2 High Performance eDRAM Cell based on 32nm High-K/Metal SOI Technology,” IEDM pp.
27.5.1-2, Dec 2010. Bright, A. et al., “Creating the BlueGene/L Supercomputer from Low-Power SoC ASICs,” ISSCC Dig. Tech. Papers, pp.
188-189, Feb. 2005. Blagojevic, M. et al., “SOI Capacitor-Less 1-Transistor DRAM Sensing Scheme with Automatic Reference Generation,”
Symposium on VLSI Circuits Dig. Tech. Papers, pp. 182-183, Jun. 2004.
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References Karp, J. et al., “A 4096-bit Dynamic MOS RAM” ISSCC Dig. Tech. Papers, pp. 10-11, Feb. 1972.
Kirihata, T. et al., “An 800-MHz Embedded DRAM with a Concurrent Refresh Mode,” IEEE
Journal of Solid State Circuits, pp. 1377-1387, Vol. 40, Jun. 2003. Luk, W. et al., “2T1D Memory Cell with Voltage Gain,” Symposium on VLSI Circuits Dig. Tech. Papers, pp. 184-187, Jun.
2004. Luk, W. et al., “A 3-Transistor DRAM Cell with Gated Diode for Enhanced Speed and Retention Time,” Symposium on
VLSI Circuits Dig. Tech. Papers, pp. 228-229, Jun. 2006. NEC eDRAM Cell Structure (MIM Capacitor): http://www.necel.com/process/en/edramstructure.html Ohsawa, T. et al., “Memory Design using One-Transistor Gain Cell on SOI,” ISSCC Dig. Tech. Papers, pp. 152-153, Feb.
2002. Pilo, H. et al., “A 5.6ns Random Cycle 144Mb DRAM with 1.4Gb/s/pin and DDR3-SRAM Interface,” ISSCC Dig. Tech.
Papers, pp. 308-309, Feb. 2003. Taito, Y. et al., “A High Density Memory for SoC with a 143MHz SRAM Interface Using Sense-Synchronized-Read/Write,”
ISSCC Dig. Tech. Papers, pp. 306-307, Feb. 2003. Wang, G. et al., A 0.127 mm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications,”
International Electron Devices Meeting, Dec. 2006. G. Fredeman et al., “A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access,” in IEEE Journal of Solid-State Circuits, vol. 51, no. 1, pp. 230-239, Jan. 2016. doi: 10.1109/JSSC.2015.2456873