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1

2006. 10. 13Dong-young Kim

Microwave Devices Team

IT융합·부품연구소

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–

–

–

–

–

––

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•

•

•

•

•

WPAN/WLAN Convergence

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▣

- Easy and immediate construction

 of temporal broadband network

 such as in exhibition-site for… Advertisement information distribution

 or Contents downloading service

▣

▣

Tx & Rx Transmitter & Receiver

Rx

Tx

SmallHDTV

Camera

To OutsideBroadcast

Van

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▣

Ultra high speed download system

▣

▣

mm-Wave PAN for on-demand transmission

or/and re-broadcasting of video and data signal for ad-hoc terminals

DVDDVD

Videosignals

Videosignals

System

Conceptual Image

60GHz

mmWave TxTV with mmWave

Rx

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Microwave Devices Team

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PD  Pre. Amp Drive Amp 

Power Amp 

LNA

Up Link

Modulator  Power Amp 

Down Link

1

2

Switch 

Rx Filter 

Tx Filter 

PD 

2

Power Amp 

Opt. Osc. Antenna 

60 GHz

/AP APMAC

AP APIF

APRF

WTWTRF

WTIF

WT WTMAC

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CaSiO3 , (Na,Mg)SiO3 , SiO2 , CaB2O4 ]

Typical Fired Physical Properties  Typical Fired Electrical Properties Thermal Coefficient of

Expansion (25 - 300 C) 

Tape Shrinkage

X,Y

Z (unlaminated to fired)

Fired Density

Flexural Strength (3

point bend)

Thermal Conductivity 

(With Thermal Vias)

8 ppm/ °C

15.3 ± 0.2 %

24 ± 0.2 %

2.45 g/cm3

 >160 MPa

2 W/mK

>50 W/mK 

Dielectric Constant (1-100

GHz)

Dissipation Factor (1-100

GHz)

Insertion Loss (10 GHz)

Bulk Resistivity

5.9 ± 0.20

<0.2 %

<0.18 dB/in

>10

12

 Ω /cm 

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기판두께 Line 길이 S11[dB] S21[dB] S12[dB] S22[dB]

2mm -31.1 -0.16 -0.18 -29.71층(100μm)

4mm -22.8 -0.41 -0.42 -24.3

-50

-40

-30

-20

-10

0

7065605550-4

-3

-2

-1

0

2mm measured4mm measured2mm simmulated4mm simmulated

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-40

-30

-20

-10

757065605550

Frequency (GHz)

Simulated S11, S22Simulated S21, S12Measured S11, S22Measured S21, S12

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Mi D i T

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-60

-50

-40

-30

-20

-10

0

7065605550

-5

-4

-3

-2

-1

0

2mm mesaured4mm mesaured

2mm simulated

4mm simulated

Mi D i T

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Microwave Devices Team

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-50

-40

-30

-20

-10

0

7065605550-4

-3

-2

-1

0

3mm5mm

Microwave Devices Team

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Microwave Devices Team

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-35

-30

-25

-20

-15

-10

-5

0

7065605550

single-wiredouble-wire

-0.30

-0.25

-0.20

-0.15

-0.10

-0.05

0.00

6462605856

-40

-30

-20

-10

0

7065605550

single-ribbon

double-ribbon

-0.20

-0.15

-0.10

-0.05

0.00

0.05

6462605856

Ribbon, size=2x0.5mil2

Wire, dia.=1mil (25 )

Wire or ribbon &Single or double

D=200

h=100

Microwave Devices Team

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Microwave Devices Team

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-20

-15

-10

-5

0

6462605856545250

double-wiresingle-ribbon

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

6462605856

-30

-25

-20

-15

-10

-5

0

7065605550

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

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Wire or ribbon &Single or double

D=200

h=200

Wire or ribbon &Single or double

D=200

h=100

•

•

•

•

•

•

•

•

Microwave Devices Team

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Gold single ribbon

Gap

distance

h=100

-1

-0.5

0

0.5

1

0 100 200 300 400 500

Gap Distance [ ]

   S   2   1  o  r

   S   1   2   [   d   B   ]

-15

-10

-5

0

5

10

15

   S   1   1  o  r

   S   2   2   [   d   B   ]

S21 S12

S11 S22

CPWdielectrics=100

100

Photograph of 100 gap

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- Solder ball loss

0.7dB @ 60GHz

• IBM(2005)

solder ball

• ETRI(2006)

- Ribbon wire loss

0.11dB @ 60 GHz

single ribbon

2001.5mm 1.5mm

-0.8

-0.6

-0.4

-0.2

0.0

0.2

50 55 60 65 70

Frequency [GHz]

   I   n   s   e   r   t   i   o   n    l

   o   s   s   [   d   B

   ]

single ribbon

2001.5mm 1.5mm

3mm

through line only

with 200 interconnect

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Gap Distanceh=100

G=~80

W=~95

D<100

Ribbon wedge

LNALNA

Chip interconnection SolutionChip interconnection Solution•• CPW lineCPW line

•• Cavity structure,Cavity structure,

•• Ribbon Wedge bonding techniqueRibbon Wedge bonding technique

Silver pasteSilver paste

GroundGround

Via & MetalVia & Metal

viavia--toto--viavia

250250

gapgap

Chip set SolutionChip set Solution•• 0.120.12 pHEMT LNApHEMT LNA

•• ViaVia--hole groundhole ground

Substrate SolutionSubstrate Solution•• Ferro A6Ferro A6--S LTCCS LTCC

•• Internal silver conductorInternal silver conductor

•• External gold conductorExternal gold conductor

⎫⎬

⎭

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c o a e e ces ea

26

•

•

•

•

•

-50

-40

-30

-20

-10

0

10

20

30

50 55 60 65 70

Frequency [GHz]

   S   2   1   [   d   B   ]

bare chip

LTCC module

-30

-25

-20

-15

-10

-5

0

50 55 60 65 70

Frequency [GHz]

   S   1   1  o  r   S   2   2   [   d   B   ]

bare chip S11

bare chip S22LTCC module S11

LTCC module S22

13.1mm

   1   0 .   2  m  m

Microwave Devices Team

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