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USN 10AL51

(05 Marks)(05 Marks)(10 Marks)

.Time: 3

Fifth Semester B.E. Degree Examination, Dec.2013 lJan.2Ul4Management and Entrepreneurship

hrs. Max. Marks:100Note: Answer FIVE full questions, selecting

at least TWO questions from each part. ,::,, ,

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PART_A :

a. Defing management. Write various characteristics of management. ,ri ;,,.,, (05 Marks)b. Briefl5r explain the various levels and skills required at different management levels.

(05 Marks)(10 Marks)

(05 Marks)(05 Marks)(10 Marks)

(05 Marks)(05 Marks)(10 Marks)

(05 Marks)(05 Marks)(10 Marks)

(05 Marks)(05 Marks)(10 Marks)

Explain the yarious functions of management.

Define planning ahd,discuss its importance. ,.,'''"''' 'l'

Write dilferences between strategii planning and tacticalplanning.Explain various steps of planning.

What is an organaation? EiBlain the purpose flhd nature of an organ:r;ation.

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4a.b.

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5a.b.

c.

6a.b.c.

Explain the types of entrepreneur.Explain the various stages in entrepreneurial process.

Enumerate characteristics of small scale industries. "

Describethe objectives of small scale industries in India.Exptrpin the steps involved in setting up a small scale industry.

What are principles of organization?Briefly explain the steps in the selection procedure.

Explain Maslow's theory of motivfuWhat are the qualities of a good leader?Briefly explain the essentials of sound controlling.

PART - BWhat are the qualities of,in entrepreneur?

Write various points to be considered for project identification.Write differences between PERT and CPM.Explain in detail the contents of "Project Report".

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. Mention imporlant central and Karnataka state government institutions providiqg support toSSIs.What are the objectives and functions of KIADB?Write short notes on any two:i) Karnataka State Finance Corporation (KSFC).ii) Karnataka State Small Industries Development Corporation (KSSIDC).iii) District Industries Centre (DIC). (10 Marks)

'. (05 Marks)'(05,&larks)

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IUSN 06EC52

Fifth Semester B.E. Degree Examination, Dec.2013 lJan.20l4Digital Signal Processing

Time: 3 hrs. Max. Marks:100

Note: Answer FIVEfull questions, selectingat lesst TWO questions from each part.

oPART _ A /.+

q/Marks)

I. (06 Marks)

d. What is a relation between Fourier series coefficients of a periodic sequence and DFT?(03 Marks)

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2 a. State and prove time shifting property of DFT.b. Find the output y(n) of a filter whose impulse response is h(n): {1, 1, 1}

signal x(n) : {3.-1.0. 1.3.2.0. 1.2. l} using overlap save method.c. Obtain the 8-point circular convolution of the following sequences:

xr(n) : 12.3.6" 8.2. 1.7,5|x2(n) : {0. 0. 0. 0. 0. l, 0. 0}.

What is zero padding? What are its uses?Find the DFT of a sequence x(n) : {1, 1, 0, 0} and the IDFT of y(k)Find the DFT of a sequence

x(n):l for n<n<L: 0 otherwise

fbr N:4 plot lx(k)l and EG)(08 Marks)

(05 Marks)and the input

(08 Marks)

(07 Marks)

3 a. FindtheDFTofasequencex(n): {1,2,3,4,4,3,2, 1}usingDIT-FFTalgorithm.' (I0 Marks)

b. Compute the IDFT of the sequencex(k): {7,A:707 - j0.707,-j,0.707 -j0.707,1,0.707 +i0.707, j,-A.7A7 + j0.707}using DIF-FFT algorithm. (10 Marks)

4 a. Discuss Chirp-z transform algorithm.b. Explain the following properlies of twiddle factor WN:

i) Symmetric ptopertyii) Periodicity property.

c. Find x(k) forthe input sequence x(n) : n * 1 and N : 8 using DIF - FFT algorithm.(10 Marks)

PART - B

S a. Design an analog Chebyshev filter for which the squared magnitude response lff , (jgi)l'

satisfies the condition 201og,o lH.0O)ln=or, ) -l ; 20 log,o lu"(jei)ln=nr, s -15(08 Marks)(04 Marks)

(06 Marks)

(04 Marks)

b. Distinguish between Butterworlh and Chebyshev filters.

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06ECs2

c. Let H(s) = , + represent the transfer function of a lowpass filter with a passband ofs'+J2s +lI radlsec. Use frequency transformation to find the transfer functions the following analogfilters:i) A lowpass filter with passband of l0 radlsec.

.,r! ii) A highpass filter with cut off frequency of 10 radlsec.

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6.',,i, s. What is a rectangular window function? Obtain its frequency domain characteristie5;'.';:r:' r ,-,'(05 Marks)

. b:'.,',p-esign FI^R low pass filter using Hamming window (M : 7) and also obt[#[;q;;;y. fe,sp nse for * .

Ho (aj*) = g-rw ; 3nl 4 <w <3nl 4

1' 7*tl-1"'l'- (l2Marks)' =o ; 3nt4.l*l=,

c. Explain Gibb's phenomenon. "r. . (03 Marks)

7 a. What is Uitin8tlr-" ansformation? Obtain the traqsfoimation formula for bilineartransformatio^n-- , ,.,,: t' (loMarks)

s+aH(s) =;. into a dieilal filter with ffinite impulse response by the use of impulse(s+a)'+b' : '--------'

{i,,..,..1,,,,,,,,,,,,,. ""''

I a. i) Obtain the cascade realization,dfuhd system functionH(z): (l + 2z-t - z-1 0 +. q., _ r-r). ... Liit Determine the direct forrn realization of the system function

b. Find the impulse response of an FIR lattice filter with coefficientS kr : 0.65. kz : 0.34,k3 :0.8.

(09 Marks)*r (09 Marks)Obtain the direct forpl and direct form-Il structure for the filters given by system function1+0sz,+' '",-,.*.

l-A-52-t +0.062-2'. .' ,:.: (05 Marks)

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Time' 3 hrs.

06EC53

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(06 Marks)

Fifth Semester B.E. Degree Examination, Dec.2013 lJan.20l4Analog Gommunication

Max. Marks:100Note: Answer FIVE full questions, selecting

at least Tl4/O questions from each part.

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a. Dofine and give expressions fori) Joint density function.ii) Conditional density functions.iii) Marginal density functions.

b. Is the function fir(x) : 2e'2* for x > 0 a PDF? If so find thevalue between 1 and 3. (04 Marks)

c. Define auto comeLat'ion function. State and prove the properties of ACF (Auto CorrelationFunction). Express ACF in terms of auto covariance function. (10 Marks)

:

a. Explain with equations ad.'frequency spectrum, the generation of AM with square law

b. What do you mean by coherent deteetion? What is quadrature null effect? (04 Marks)c. An amplitude modulated voltage is given is V:50(l + 0.2cos 100t + 0.01cos 3500t)cos 106t.

State all frequency components pr€sent;in AM signal. Find modulation index for eachmodulating voltage term. What is'effective modulation index? Find the efficiency of

modulator. Take m(t) : A, cos wmt to draw spectrum. (08 Marks)

modulation. (08 Marks)

a. What is bandpass signal? Derive canonical representation of BPS. Draw phasor diagramsand block diagrams to show how BPS can be represented with lowpass signals. (10 Marks)

b. Consider two stage SSB modulator. The input signal consists of voice signals occupying thefrequency band 0.3 to 3.4 kHz. The two oscillator frequencies have values f1 : 100 kHz andf2 : 10 MHz. Specif, the following:i) The sidebands of DSB-SC wave appearing at the two product modulator outputs.ii) The sidebands of SSB modulated wave appearing at the two bandpass filter output.iii) The pass band and guard bands of the two bandpass filters. (10 Marks)

a. Derive time domain expression for vestigial sideband modulated signal. (10 Marks)b. With neat block diagram, explain the operation of a superheterodyne receiver. (10 Marks)

PART _ Ba. What is Carson's rule? Show that it applies both to narrow band and wide and FM.

(04 Marks)

b. An angle modulated signal is described by s(t): 10 cos[2n106t + 0.1 sin10't1. Find themessage signal m(t).i) Considering s(t) as phase modulated signal with Ko: 10.

ii) Considering s(t) as frequency modulated signal with kr: 5.

c. In a two stage wideband frequency modulator, f1 : 200 kHz. Maximum phase deviation istaken as 0.2 rad to avoid distortion. Modulating signal range from 50 Hz to 15 kHz. The

carrier fiequency at the output is 108 MHz. Select multipliers and mixer oscillator

5

frequency. Tabulate fc and Af at each stage. (10 Marks)

06EC53

2 of2

USN 06EC54

(06 Marks)

Fifth Semester B.E. Degree Examination, Dec.2013 lJan.2$l4Microwaves and Radar

Max. Marks:100

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2 a. Obtain the expression for wave impedance for TM wave propagation through a rectangularwave guide. ,' (08 Marks)

b. An air filled circular waveguide having an inner radius of ,1 cm is excited in dominant modeat 10 GHz. Find i) the cut off frequency of dominant mode. ii.1 guide wave length iii) wave

Time: 3 hrs.

4a.b.c.

5a.b.

c.

6a.b.

c.

la.b.

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8a.

Note: l. Answer FIVEfull questions, selectingut least TWO questions from each purt.

2. Missing datu may be suitably assumed.3. Smith chart is permitted.

PART _ AWhat are the applications of smith chart? Explain briefly.

State and explain the properties of S-parameters.Explain S-matrix representation of multiport network.

Define reflection co-efficient and derive the equation for reflection co-efficient. (10 Marks)

A trans,mission line has R : 2 e.lm. G : 0.5 mmho/m, f: I GHz,L = 8 nH/m, C : 0.23 pF.

Calculate i) the characteristic impedance ii) the propagation constant. (0zl Marks)

impedance. (04 Marks)

oscillations. (10 Marks)

c. Explain the construction, working and application of isolator based on Faraday rotation.(08 Marks)

3 a. Explain construction and operation of Gurrn diode in the Gunn mode and LSA mode.(10 Marks)

b. With neat diagram, explain the construciion operation of IMPATT diode and mechanism of

Zoi

€rwrite the relationship of ABCD parameters with z parameterc i\n[ "[Ei;*PAr 'v\___,With a neat diagiam, explain the operation of microwave attenuatOr\@,-

Marks)Marks)Marks)

Marks)Marks)Marks)

Explain the characteristics of a magic tee, obtain S-matrix representation.Explain the construction of a co-axial cable.

Explain the construction and field patterns for microstrip line.Explain the different losses taking place in microstip line.

Determine the cross-section of the target the radar can sight.Explain briefly the applications of radars.

With a neat block diagram, explain working principle of MTI radar.With a neat block diagram, explain the operation of a pulse Doppler radar.

(t0(04

A shielded strip line has dielectric constant of the insulator e,=2.56, strip wi&h W :25mils, strip thickness t: 14 mils, shield depth d: 70 mils. Calculate i) K factor i, thelringe capacitance iii) the characteristic impedance of the line. (06 Marks)

Derive the simple radar range equation. (10 Marks)A marine radar operating at 10 GHz has a maximum range of 50 km with an antenna gain of4000. The transmitter has a power of 250 KW and a minimum detectable signal of 10-rr W

(08 Marks)(06 Marks)

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Time:

10EC55

(06 Marks)

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Marks)

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Fifth Semester B.E. Degree Examination, Dec.2013 /Jan.2O14

lnformation Theory and Goding

3 hrs.Note: Answer FIVEfull questions, selecting

at least TWO questions from eoch part.

PART _ ADefine: i) Unit of information, ii) Entropy, iii) Information rate.

rate of the solriee.c. Find Gr and Gz and verify that Gr > G2 > H(s).

?u= z/rt

Fig.Q1(c)

Y):H(X/Y)+H(Y).

Max. Marks:10O

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la.b. The output of an information source consists of 128 symbols 16 of which occur with a

probability of ll32 and remaining occurs with a probability of !22! The source emits 1000

symbolslsee assuming that symbols are chosen independently. Find the average information

Show that H(X,Apply Sha nco ding algorithm. iofu f,o llowing message :nnon encodlns a

Symbols Sr Sz SiProbabilities 0.5 0.3 0.2

i) Find the code efficiency and redundancy.il) If the same technique is applied to the second order extension of the source, how much

will the redundancy be improved. (10 Marks)

A technique used in a source encoder is to arrange message in a order of decreasingprobability, divide message into two almost equal groups. Message in 1" group are assigned

zero. Messages in 2nd group are assigned with 1. Procedure'is repeated till no further

3a.b.

division iq,po;sible. Find code words for 6 messages.

State the properties of mutual information.

.....(06 Marks)

State S-hannon's Hartley law and its implifications. ,:::,,:, (05 Marks)

Apply Huffman coding procedure for the following set of messages and determine theefficiency of the binary code so formed symbols Xr, Xz, X: with probadilities 0.7, 0.15,0.15. If the same technique is applied to the 2nd order extension for the above messages.

How much will the efficiency be improved? (10 Marks)For an AWGN channel with 4 kHz-B.W and noise spectral density No/2 : 10-t2 WHz. Thesignal power required at the receiver is 0.1 mW. Calculate the capacity of the channel.

(05 Marks)

(04 Marks)For the JPM given below, compute individually H(X), H(Y), H(X, Y), H(Y/X), H(X/Y) andI(X, Y). Verify the relationship among these entropies.

lo.os o o.2o o.osl

l n o.ro oro o lPtX.Yt:l I

| 0 0 0.20 0.r0|

10.0s 0.0s 0 0. r0_l

c.

(10 Marks)

4 c. The noise characteristics shown in Fig.Q4(c), find channel capacity.

10EC55

(06 Marks)

(06 Marks)

by listing the(10 Marks)

K1

Ny

Y,

\-

5a.b.

, Fig.Qa(c)

: PART_B

What are the different methods of controlling errors? Explain.For a systematic (7, 4) linear code, parity code is given by

P_

Find all possible vatii cile vectors.Draw the corresponding on0oding circuit.A single error has occurred in'bach of thesb vectors detect and correct these errors:

YA: [0111110], Ye: [101I100], Yc: [1010000]Draw the syndrome calculation circuit. (14 Marks)

t, ,,' I

1,1 0

l01,011

a. What is binary cyclic code? Describe the features of encoder and decoder used for cycliccodes using an (n - k) bit shift register. (10 Marks)

b. Consider(15, 11)cyclic codesgenerated byg(x) : I +x +x4:i) Device a feedback re$ister encoder for this code, .

ii) Illustrate the encoiling procedure with the message vector 11001101011states of the register.

Write explanatory note on:a. RS codes

b. Golay codesc. Shorterld cyclic codes

d. Buist Error Correcting Codes

''-'' Consider (3, 1, 2) convolutional code with impulse respons. gt') :,r:):1lll).i) Draw the encoder block diagram.ii) Find the generator matrix.iii) Find the code vector corresponding to

transform do main approach.

(20 Marks)

(110), g{2) = (101),8

"l:... '

message sequence 11101 using time domain and(20 Marks)

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USN 06EC56

Fifth Semester B.E. Degree Examination, Dec.2013 /Jan.20l4Fundamentals of CMOS VLSI Design

Time: 3 hrs. Max. Marks:100Notez Answer FIVEfull questions, selecting

at least TWO questions from each part.

PART _ AI a. Explain the working of enhancement mode transistor with neat nMOSFET structures at

different conditions of applied voltages. Also draw the o/p characterjstics and identify thedifferent regions of operation. (08 Marks)

b. How many fiask layers are required in a basic nMOS process? Explain the function of eachof these maskS. - (07 Marks)

c. What is a .noise mar.eil?. Obtain the values of V1s, Vru, Vol and Von from transfer

characteristics of a typical inverter. (05 Marks)

2 a. Explain },-based design rulcs for contact cuts and,iu, *itt neat diagrams. (12 Marks)b. Draw the stick diagram for the CMOS implementation of the Boolean expression

Y=AB+C. (08Marks)

3 a- Explain the working of dynamic CN{OS logic with necessary diagram and waveforms. Whatare the problems encountered in this logic? Explain how CMOS domino logic eliminates theabove drawbacks with necessary diagrams. (10 Marks)

b. Discuss the working, merits and demerits of the following logic structures with two inputNAND gate realization as an example: i,) Complementary CMOS logic; ii) Pseudo NMOSlogic. (10 Marks)

4 a. Two nMOS inverters are cascaded to drive capacitive load Cr,: 168C, as in Fig.Q.4(a).Calculate the pair delay (V;n to Voul) in terms of t for the inverter geometry indicated infigure. WhaJ are the ratios of each inverter? If strays and wirings are allowed for, it would bereasonable' to increase the capacitance to ground across the o/p of each inverter by 4nCr.What is the pair delay allowing for strays? Assume t : 0.1nsec to evaluate thir pai*elfil;ur,

*- lvo4I Lr-fif*

Inverter 1

Lpu : 161"

Wru:21"Lpa:2XWpo:21"

Inverter 2Lrr:2XWor:2Lpa:2)"Wpa: 81"

Fig.Q.a(a)What is the problem encountered in driving a large capacitive load? How this proilffiTinbe overcome using cascaded inverters? Obtain the expression for total delay for N stages ofnMOS and CMOS inverters in terms of width factor f and delay r. What is the problemencountered in cascaded inverters? Explain how it is overcome.

trol/b"Y

I of2

(12 Marks)

06EC56

USN 10ECs6

Fifth Semester B.E. Degree Examination, Dec. 2013 / Jan 2014.Fundamentals of GMOS VLSI

Time: 3 hrs. Max. Marks:100

Note: Answer any FIVE full questions, selecting atleost TWO questions from euch part., J

' -- --

PART. AI a. Explain the fabrication steps of CMOS P - well process with neat diagram and write the

_ mask sequence. (12 Marks)b. List the threshold voltage equations and emphasize each term. (08 Marks)

2 a. Write the CMOS inverter circuit and briefly explain. Write the CMOS VTC showingregions A, B, C, D, E. Derive the expressions for output voltage in region 'B'. (10 Marks)

b. Write the circuit and layout for Y : AB + CDLF E in CMOS style. (10 Marks)

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c.

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Write the circuit and stick diagram for CMOS tristate inverter.write the circuit otBiCMos NAND and NoR gate and briefly explain.Explain the circuit of dynamic CMOS iogic by taking an eiampreY = [1[1611ffi.

4 a. Define Sheet Resistance (Rs) and standard unit of capacitance (rCg). Calculate the on

,,,:iL D^ - t't-t'\t- '7 - 81 7 -

2)resistance of 4:1 nmos inverter with Rs : 10k0li, Zpu: ; , Zpd = :4. Also estimate the

total power dissipated if Voo : 5V.b. Calculate the capaoitance in r Cg for the given metal layer shown in fig.e4(b),tii#,T:l

size : 5prm and relative value of metal to substrate : 0.075. ' (05 Marks)

3rtFie.eatb) *

c. trxplain briefly the circuit

a. Calculate the O/P voltage

5oA --->

of inverting and non - inverting super buffer.

(04 Marks)(08 Marks)

of the function

(08 Marks)

(07 Marks)

PART - BVoul in tt. .t@uen below for different values of Vu, Vu.

(04 Marks)

*, *:# !-gY

fVs&

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Fig.Qs(a)

Design Bus Arbitration logic for n - line bus.

10EC56

(10 Marks)b.

c.

and lpm thick? Assume Jtr,.: lrnA/(pm)2 , R": 10K0 / n , Voo :5V.,(06

MarkO

a.i',,Discuss the 4 phase clocking scheme to avoid the problem of cascading in dynamic CMOSlogie. (06 Marks)

Consider ), - based design rules and 5trrm technology. How many nmos 8:1 inverter

(rr- =* *O ,r^ =*)can be driven by a minimum size conductor which is 3)" wide

b. What are the adder enhancement techniques? Briefly explain. .:. (04 Marks)

c. Write ,,explair

6 - bit carry select adder. (10 Marks)

a. Write ana $aip 4 Transistor dynamic and 6 Transistor stiit'li CIIOS memory cell withsense amplifier. (12 Marks)

b. Explain the one trar{sistor dynamic memory cell emphasizfpg three plate capacitor.(08 Marks)

Write short notes on : " ' .

a. Latch up. (07 Marks)

c. I/O pads. (07 Marks)

2 of2