4gbpshgih-denstiy ac coupled interconnection · 4 ac coupled interconnect concept •ac coupled...

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1 4 Gbps High-Density AC Coupled Interconnection Stephen Mick, John Wilson, Paul Franzon North Carolina State University [email protected] www.ece.ncsu.edu/erl (919) 515 7351

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Page 1: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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4 Gbps High-Density AC Coupled Interconnection

Stephen Mick, John Wilson,Paul Franzon

North Carolina State [email protected]

www.ece.ncsu.edu/erl(919) 515 7351

Page 2: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Outline

• Concept and Benefits• Physical Structure• Capacitive Coupling• Inductive Coupling• Discussion & Future Work

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AC Coupled Interconnect

Concept and Benefits

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AC Coupled Interconnect Concept

•AC coupled connections down to 70 µm pitch on large scale arrays•Signaling through capacitive or inductive coupling•Buried solder bumps to bring chips into proximity and provide DC power•High-speed, low-power transceivers

Substrate

DC Connection(Solder Bump)

VLSI ChipAC Connections

TrenchInterconnection

LayerSolderBump C

hip

L-C Pads

SubstrateBumpPad

L-C Pads

Page 5: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

5

System Models

Chip 1 Chip 2

CouplingCapacitor

CouplingCapacitor

Transmitter Receiver

Short substrate

connection

Chip 1 Chip 2Long

Substrate Connection

CouplingCapacitor

CouplingCapacitor

Trans. LineTransmitter Receiver

Short substrate

connectionChip 1 Chip 2

CoupledInductors

CoupledInductors

Transmitter Receiver

Capacitive Coupling Inductive Coupling

Chip 1 Chip 2Long

Substrate Connection

CoupledInductors

CoupledInductors

Trans. LineTransmitter Receiver

Page 6: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Why?• Need for high density connections

– Networking : I/O bound (performance)– Computing : Vdd/Gnd bound (noise)– System level connectivity always underfed

• Cost Considerations– Sub-mm pitch connectors/sockets = $$– Compliant high density interfaces = Difficult

Achieve end of ITRS roadmap TODAY

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Benefits of AC Coupling

• Dense– E.g. 600 power/ground + 8,000 signals per sq.cm.

• Manufacturable– Little change to manufacturing process– Mechanically Compliant interface

• C.f. difficult issue in large arrays of smaller bumps– Plate or spiral protected by thin glass

• Broad applications– MCMs, packages, sockets, connectors

Page 8: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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…Benefits

• Low area– Minimal ESD requirements

• Good Signal Integrity– Large signal swing– Series impedance presents wide-band

match– Impedance matching and termination– Reduces SSN

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AC Coupled Interconnect

Buried Solder Bump

Page 10: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Overview

• Brings AC pads into controlled proximity• DC & AC power and ground path• Solder bumps buried in hole or trench• Physically performed by

– Etching; Green Tape punch; Laminate punch

Substrate

DC Connection(Solder Bump)

VLSI Chip

AC Connection

Trench

Dielectric

Interconnect Layer(s)

Page 11: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

11

Issues

• Coplanarity & gap uniformity– More important in capacitive than inductive

interconnect• Alignment

– Better alignment = improved coupling

Solved using solder bumps– Provide precise dimensional control

Page 12: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Physical Demonstration

• Using silicon micromachining and flip-chip solder-bump– Gap can be controlled to 1 µm +/- 0.5 µm

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AC Coupled Interconnect

Capacitively Coupled Demonstration

Page 14: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Coupled Capacitor System

• Can be tuned for impedance match at very high frequencies.

• Voltage mode drivers

Chip 1 Chip 2

CouplingCapacitor

CouplingCapacitor

Transmitter Receiver

Short substrate

connectionChip 1 Chip 2

Long Substrate Connection

CouplingCapacitor

CouplingCapacitor

Trans. LineTransmitter Receiver

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Coupled Capacitor Receiver

Kühn, et al., 1995 ISCAS

• Must be able to recover attenuated NRZ data– Want to avoid coding

• Kühn single-ended receiver is capable– Diode feedback - Not TX-gate feedback– Maintains high gain and high input impedance

Receiver Layout

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Capacitor Demonstration• Fabricated through MOSIS in TSMC

0.35 µm technology

Pad TX

Pad RX

Bondwire

On-Chip

Driver

Receiver

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Coupled Capactor Results• Driven up to 3 GHz

– 0.35 µm CMOS– 33 mW– 2 V signal– 10 mW @

2 GHz

On wire

After Rx

(100:1 7 GHz BW High-Z probe)

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Capacitor Impedance Matching

50

50 Ω match desired in longer lines•Requires large plates or high K dielectric

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AC Coupled Interconnect

Inductive (Transfomer) Coupling

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Motivation• Easier to provide 50 Ω match• Reduces need for coplanarity• Similar density to capacitors

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Structures

Short substrate connection

Chip 1 Chip 2

CoupledInductors

CoupledInductors

Transmitter Receiver

Chip 1 Chip 2

Long Substrate Connection

CoupledInductors

CoupledInductors

Trans. LineTransmitter Receiver

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Modeling & Measurement

• On-chip transformers notoriously difficult to model accurately

• Approach:– Measure candidate structures– Extrapolate models

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Coupled Inductor MeasurementsTSMC 0.25µm process; 50µm Spiral Inductor; 9 Turns

-10dB

-14dB

-16dB

-18dB

-20dB

-22dB

1GHz 5GHz 10GHz 15GHz 20GHz

chip 2

chip 1

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Coupled Inductor Model

• Capacitance and Resistance– Calculated from TSMC process

parameters• Inductance calculated from formulas in

literature• Use model to match measurements

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25109 1010-28

-26

-24

-22

-20

-18

-16

-14

-12

Mag

S21

(dB

)

Frequency (Hz)

Measurement and Model

Model to Match Measurements

• Lumped model• Cp = 180fF• Cps = 15fF• Rp = 65Ω• Rs = 65Ω• Lp = 2.8nH• Ls = 2.8nH• K = 0.5

• Excellent fit• K low

– Excess loss?

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Improved Structure• Chip inductor : 6 turns• Package inductor : 3 turns

K=0.9

K=0.6

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Coupled Inductor Driver• Simple driver

– Current steering differential pair

• Provides flexibility with simple design

• Low power supply noise• Termination provide by on-

chip resistors– Also investigating H-bridge

style driver

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Coupled Inductor Receiver • Ishibe receiver design for

current-mode signaling– Constant input impedance

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Overall Model

TransmitterReceiver

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Simulation Results• 87 mW @ 5 Gbps• Current @ Receiver input as f(K):

K=0.9

K=0.6

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AC Coupled Interconnect

Discussion

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FAQs

• Crosstalk?– Model results

• < 1% in capacitive case• < 5% in inductive case

• EMI?– Not modeled yet

• ESD– Reduction expected but how much TBD

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…FAQs• Frequency Characteristics

– Both provide over a decade of “pass band”

– Long sequences of 0’s and 1’s compensated in RX

– Pass-Band “tunable” by design

F (GHz)0.1 1 10 100

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Capacitive vs. Inductive

• Capacitive– Large plates or high-K dielectric required

for longer (>tr/3 connections)• Inductive

– Larger losses – Slightly narrower “pass band”– More routing impact

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Future Work

• Complete demonstration of inductive and capacitive connections– Long lines, eye diagram mesurement

• Formulation of design rules• Demonstration of connector structure

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Conclusions

• High density interconnect structure– E.g. 600 power/ground + 8,000 signals per

sq.cm.– Pitch down to 70 µm

• Low-cost interconnect structure– Little change to current manufacturing line– Compliant physical structure

• Design optimization well under way

Page 37: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Thankyou

Page 38: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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OverviewSide view

Unit cell top view (version 1) Unit cell top view (version 2)

Substrate

DC Connection(Solder Bump)

VLSI Chip

AC Connection

Trench

Dielectric

Interconnect Layer(s)

Page 39: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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• Future high-performance product 225mm2

• AC Coupled Interconnect – unit cell version 1 -- non-overlapping square

array– 1369 solder bumps: 400 µm pitch → 37 x 37

array– 16428 AC pads: 100 µm pitch → 37 x 37 x 12– 17797 total connections (subject to wiring

constraints)• AC Coupled Interconnect

– unit cell version 2 -- overlapping hexagonal array– 8115 solder bumps: ~400 µm pitch (direct

connections on very large pitch, which eases

Density Examples

Page 40: 4GbpsHgih-Denstiy AC Coupled Interconnection · 4 AC Coupled Interconnect Concept •AC coupled connections down to 70 µm pitch on large scale arrays •Signaling through capacitive

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Physical Structure Issues

• Co-planarity and Alignment– Demonstrated (next slide…)

• Metal routing from top to bottom of trench– Not currently demonstrated– New process being developed

to address this issue• Wiring density

– New process will support multiple routing/interconnect layers

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Physical Demonstration (2)Substrate / Chip Bonding

• Solder bump array permits precise gap control and co-planarity– Demonstrated on silicon surfaces

Controllable and Designable GapArray After Separation

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Substrate Process Description• New 7 layer process

– Zero level: alignment to crystal lattice– 2 metal levels for interconnect and coupling

elements– UBM level for solder bump pad

DC test structure AC test structure

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AC Coupled Interconnect

Passive Elements

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Passive Element GoalsCoupled Inductor System• Develop lumped model

– match measured data– use for new system design

• 50Ohm impedance from transmission line to driver and receiver secondary inductors

• Determine optimal inductor geometry

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Physical Demonstration (3)Coupled Inductor Measurements

• TSMC 0.25µm 5 metal process• Polysilicon shield• Metal1/Metal4 50µm diameter spirals

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AC Coupled Interconnect

Drivers and Receivers

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Driver and Receiver GoalsCoupled Inductor System

• Matched impedance driver and receiver• Low power dissipation• 3-6GHz operation• Current mode operation

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AC Coupled Interconnect

Future WorkDemonstrate feasibility of LC

coupled structures

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Plan: Future Work• Complete 2nd generation substrate design and

fabrication• Complete design and fabrication of inductor

test structures at NCSU– Leads to demonstrated understanding of tradeoffs:

• turns, turns ratio, crosstalk, wire spacing, wire width, substrate conductivity, parasitics, offset

– Develop reliable LCRk model for system design• Approach (4” Si wafers)

– Fabrication in NCSU Clean Room– Test using ERL HF test facilities– Account for typical feature sizes

in packages

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… Plan: Future Work• Use results from inductor fabrication and

improved models to design matched impedance systems

– On-chip demonstration in MOSIS TSMC 0.25um

• Perform Testing on structure– Eye Diagram, Power consumption, etc.

• Investigate effect of inductors upon nearby active circuitry

Long interconnection

On-chipCoupledInductors

On-chipCoupledInductorsTrans

LineTransmitter Receiver

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Open IssuesHave presented several times at member companies.Recurring Questions• Underfill & stress relief in general

– Feasible but not demonstrated• Different dielectric constants

– E.g. Use underfill material?• Feasible but not demonstrated

• Range of demonstrations– Differential, single-sided, through package structures

• Design Rules– Optimizing SI in particular circumstances

• Package and package-chip interaction, ESD, EMI, frequency tuning, etc.

– Methodology + baseline not yet established• Sockets and Connectors

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Conclusions• Demonstrated feasibility of buried solder ball

concept• Demonstrated feasibility of capacitively

coupled short connections• Patent filed • LC-coupled structures permit extension of

structure to impedance controlled connection structures– Sockets– Connectors

• Plans focus on demonstrating feasibility of inductively coupled connections