2d soc vs 3d ic
DESCRIPTION
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2D SOC 3D IC
Dec. 11, 2009
by Jing Jou Tang /STC-ITRI
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Moore (1965)
Number of Computer per Integrated CircuitRel
ativ
eM
anuf
actu
ring
cost
per
Com
pute
r
2008/04 in Golden Moores Office
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Skyscrapers
Location : TaiwanHeight : 508 MFloors : 101Built : 2004
Location : DubaiHeight : 705 MetersFloors : 160To Be Completed : 2008
Location : MalaysiaHeight : 452 MetersFloors : 88Built : 1998
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2D vs. 3D
http://www.jonathassociates.com/AJA/droppedImage.png
20(TSV)
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2D vs. 3D
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Via First Process
Source: Yole
Source: IBM SEMATECHIMEC
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Via Last Process
Wet EtchingPlasma (DRIE) Etching
Laser drillingSource: Fraunhofer IZM
[email protected] XIL ALCATEL
Source: Yole
Source: SEMITOOL
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3D Integration
Source: NXP
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Why Not SOC ?
(Cost) (Material) (Lithography) 3D (Transistor Architecture) (Variability) (Thermal Dissipation)
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Limitation of SiP
Limited BandwidthLimited DensityLimited PerformanceLimited Capability of Mass Production
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Possible Future Application
Mobile Graphic IC+ CPU + MemoryCPU+ MemoryGPU+ MemoryLED Driver: RAM+VGAHeterogeneous MemoryLCD Driver+ luminance Sensor + LED
Driver
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Tezzaron 3D Memory Devices
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NEC 8DRAM
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SamsungTSVDDR3 (1/3)
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(Koyanagi)DRAM
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Elpida 3D DDR3 DRAM Source: http://www.elpida.com/en/news/2009/08-27.html
Roadmap: 8G TSV DRAM/Sample (before the end of 2009 )16G TSV DRAM (mid 2010)
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Samsung 3D IC NAND Flash
Samsung 16Gb NAND stack with TSV
http://www.techpowerup.com/10837/Samsung_Develops_3D_Memory_Package.html
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IMEC 3D IC Memory
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Matrix (Sandisk) 3D Memory
OTP (One Time Programmable)Architecture
Hybrid Scaling Segmented Word line architecture2001/2003TSMC 0.25um CMOS
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Booming Factors/Time of 3D IC
202020192018201720162015201420132012201120102009~2008
Power
Performance
Form Factor
Time to Mkt.
Cost
Heterogeneous
CISMemory
CISMemory
CISMemory
CPU
CISMemory
CPU
CISMemory
CPURF/MEMS
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Join Us
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3D IC/
AdAd--STACSTAC(())
EDA
SIPO
/
: FablessFabOSAT:
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More Closed Link on 3D IC
CMP
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