200mm Next Generation MEMS

Florent Ducrot

Technology update

External Use

Solar

The Most Exciting Industries on Earth

20,000,000xreduction in

COST PER TRANSISTOR

in 30 years1

20xreduction in

COST PER AREA

in 15 years2

3xreduction in

COST PER WATT

in 4 years

At 1976 transistor prices,an iPod® would have cost $3.2B

1 Source: SIA, IC Knowledge LLC2 Source: Display Search, Nikkei BP, Applied Materials

DisplaySemiconductor

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Continued Technology Development

Discrete

Power

Analog

LED

MEMS

TFB

& Others

200mm market growth

driven by consumer

electronics, automotive,

industrial and medical

applications

APPLIED MATERIALS

Over 40 years oftechnology development to enable life-changing innovations

* All images used with owners permission

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Expansion of MEMS Capabilities Applied Materials Supports MEMS Production and R&D

Working within the

Global MEMS

Community…

DEVELOPING NEW EQUIPMENT, MATERIALS AND PROCESSES FOR MEMS

Thick Aluminum (Al)

High Power Devices

Aluminum Nitride (AlN)

RF and Mechanical

ApplicationsSub-Micron MEMS

External Use

200mm MEMS Equipment PortfolioApplied Materials is growing its ≤200mm MEMS portfolio

External Use

Latest DRIE Technologies

No In-Situ Chamber Clean allows best in class wafer throughput and extends Mean Time Between Cleans far beyond 500 RF Hrs !

Tunable Source Coil Technology enables WIW etch depth and sidewall profile nu. < 2 %

Hard Mask-Open Capability with dielectric etch rates approaching 750nm/min !

High Speed Gas Switching enabling Bosch process with << 1sec etch and deposition times

Low Temperature (-20°°°°C) Capability for increased selectivity and sidewall profile control

Pulsed High Power Low Frequency Generator

eliminating undercut on SOI wafers

Parameter Ramping with enhanced recipe control

New DPS DTM Chamber (Actual Photo Shown)

NEW DPS DTM DRIE Chamber for MEMS, Power Devices and TSV

Demo Ready

External Use

Next Generation DRIE Capability

7

400 nm

Excellent End Point and Notch

Control in SOI Applications !

High Etch Rates (≤22µm/min)

and Fine Profile Control for TSV

Low Mask Undercut (17nm) and

Ultra-Small Sidewall Scallops (13nm)

Ultra-High Aspect Ratio Sub-Micron

MEMS Applications

Demo Ready

External Use

Advanced Deposition Processes

Thick (≤40µm) CVD SiO2

Silicon

SiO2 Layer

High Dep Rate PVD GePVD AlN (≤2.5µm)(nu. << 0.5%)

ECD Metal (>100µm)

Adding new film processes in support of MEMS

Epi-Silicon (≥ 50µm)

Demo Ready

Ge Layer

Al Layer

Si Layer

Single Step (≥10µm) Low Temp SiGe

Applied Materials Confidential 9

Conclusion

For More information about Applied Materials

MEMS product portfolio please contact Applied Materials Sales.

Applied Materials is continuing to expand its MEMS product portfolio with the aim of providing a complete MEMS solution in support of all process technologies that are critical to MEMS development.

Applied Materials currently offers DRIE, CVD, PVD, CMP and Metrology Tools for MEMS.

www.AppliedMaterials.com/mems

External Use11

MEMS CVD – SiGe

Parameters Target Requirement Actual

Wafer to wafer uniformity +/- 5% <3%

Within wafer uniformity +/-3% <2% 1 sigma

Ge content 60 – 65% ≥ 60%

Thickness 5 – 10um ≥10µm

Conformality Fill 2:1 aspect ratio TBD

Maximum temperature 425C ≤ 420C

Deposition rate >100nm/min 236nm/min

Resistivity < 5mΩ-cm < 4 mΩ-cm

Residual stress 100 - 150MPa comp 130MPa comp

Strain gradient < 5x10-5µm-1 TBD

Offering Low Temp, High Dep Rate Films for CMOS Compatible MEMS

SiGe Layer on SiH4 USG

SiGe Layer on Thermal SiGe SeedCurrently the only Single Step/Pass

Process For Low Temp, Thick SiGe Films !

Demo Ready

External Use12

MEMS CVD – Thick OxidePECVD TEOS Or SiH4 based Low Temperature, Thick Oxide (≥22µm)

Parameters TEOS SiH4

Within wafer uniformity 1.18 % 0.98 %

Thickness per Pass >5 um >5 um

Maximum temperature ≤350°C ≤350°C

Deposition rate >1300 nm/min >2300 nm/min

Residual stress -43 MPa -48 MPa

Refractive Index 1.4549 1.4789

Defects 138 (> 0.2um) 20 (> 0.2um)

Single pass 5µm deposition, no clean required

Target Applications Include: MEMS

Photonics

≥ 20µm Thick PECVD TEOS

Demo Ready

External Use13

Aluminum Nitride (AlN)

AlN for Production at Both 6” and 8” Wafer Sizes

ParametersTarget

RequirementActual

WIW Uniformity (6’ / 8”) < 0.5% / <1.0 % < 0.5 % (6”) << 1% (8”)

Thickness 800nm – 2.5µm Tunable

Deposition rate >80 nm/min > 85nm/min

FWHM Rocking Curve ≤ 1.65 ≤ 1.3

Maximum temperature 450°C ≤ 400°C

Stress -100MPa to 400MPa Tunable

Refractive Index 2.08 ± 0.2 2.0723

Surface Roughness < 2.5nm 1.5nm

Applications in RF Devices and MEMS Actuator Devices

AlN Layer on Mo(Deposited on 8” Wafer)

Demo Ready – Oct’12

External Use14

PVD Ge Films

Often used as a Bonding Layer and Electrical Interconnect

Parameters Actual

WIW Uniformity < 2.6 %

Thickness ≥ 540nm

Deposition rate > 260 nm/min

Maximum temperature < 400°C

Stress 221 MPa

Bulk Resistivity (Ohm.cm) ~ 48

Surface Roughness ~3.78 nm

Ge Layer

Al Layer

Si Layer

Roughness ~ 3.78nmTilted View of Top Surface

High Deposition Rate Ge Process For Thick Ge Films

Demo Ready