12me102 - workshop practice lab manual

8/12/2019 12ME102 - Workshop Practice LAB MANUAL

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TABLE OF CONTENTS

S.No Ti!" o# $" E%"'i(") P*+".No O,- Vi* R"/o' Si+)

1#o%erin! of #i&2e Eectronic

Circuit*

3 Characteristics of 4N %io%e /

* #taircase 5irin! 11

6uorescent a&2 7irin! 1*


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on a 'ench !rin%er$ is so&eti&es use% to carefuy re&oe ery seere o8i%ation, thou!h this

&ay ris9 %a&a!in! the ti2s 2rotectie iron 2atin!) A s&a a&ount of fresh so%er is usuay then

a22ie% to the cean ti2 in a 2rocess cae% tinnin!) The 7or9in! surface of the ti2 is usuay 9e2ttinne% (coate% 7ith 7et so%er$ to &ini&i


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#o%erin! Iron E82ose% Fie7

4erf 'oar%

Co&2onent #i%e #o%er #i%e

CIRCUIT DIAGRAM

BC 547 Pin details

.

G.F

**0 H

1 KH

LED

BC .Transistor

C

B

E


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E4.NO.2 CHARACTERISTICS OF PN DIODE

Ai(

To o'tain the FI characteristics of a 4N Dio%e)

E56i(")-

S.NO APPARATUS RANGE UANTITY

1 Re!uate% 4o7er su22y (0*0$F, 3A 1

3 Di!ita Muti&eter (01$F(0*0$F

Each one

* A&&eter (0.0$ &A

(0100$ AEach one

4N Dio%e IN001 1

. Resistor 1 KH, 15 1

/ Brea%'oar% 1

Connectin! 5ires 6e7

D"-/'iio)

4N ;unction %io%e is a se&icon%uctor %eice constructe% 7ith the foo7in! t7o

se&icon%uctor &aterias(i$ 4ty2e se&icon%uctor &ateria

(ii$ Nty2e se&icon%uctor &ateria

The 2ty2e &ateria is for&e% 'y %o2in! a triaent i&2urity to the 2ure se&icon%uctorsuch as #iicon or +er&aniu&) It for&s hoes as &a;ority carriers an% eectrons as &inority

carriers)

The nty2e se&icon%uctor is for&e% 'y %o2in! a 2entaaent i&2urity into the 2ure

se&icon%uctor) It for&s eectrons as &a;ority carriers an% hoes as &a;ority carriers) The currentfo7s in 4N ;unction %io%e %ue to 'oth the &a;ority an% &inority carriers) 6or a 4N ;unction

%io%e, there are t7o ty2es of Biasin! &etho%s na&ey (i$ 6or7ar% 'ias " (ii$ Reerse 'ias

Fo'7*' ,i*-i)+

The 4ty2e se&icon%uctor (Ano%e$ is connecte% to the 2ositie ter&ina of the DC

2o7er su22y an% Nty2e se&icon%uctor (Catho%e$ is connecte% to the ne!atie ter&ina of the

su22y) 5ith this for7ar% 'ias, the hoes in the 4re!ion an% eectrons in the Nre!ion &oe

coser to the ;unction) The 7i%th of the %e2etion re!ion re%uces an% 2otentia 'arrier asore%uces)

This re%uce% 'arrier 2otentia resuts in increase% fo7 of &a;ority carriers) The &a;ority

carrier hoe of 4si%e fo7 across the ;unction to Nsi%e an% &a;ority carrier eectron of Nsi%efo7 to 4si%e) This 7i cause &a8i&u& current to fo7 in the %io%e in the for7ar% %irection

un%er for7ar% 'ias con%ition)

/


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R""'-" ,i*-i)+

The 4ty2e se&icon%uctor (Ano%e$ is connecte% to ne!atie of 2o7er su22y an% Nty2e

se&icon%uctor (Catho%e$ is connecte% to 2ositie of 2o7er su22y) 5ith this 2oarity ofconnection, hoes in the 4re!ion an% eectrons in the Nre!ion &oe a7ay fro& the ;unction)

Thus 7i%th of %e2etion re!ion increases an% 2otentia 'arrier aso increases)

This re%uces the fo7 of &a;ority carriers across the ;unction to other si%e) But, the fo7of &inority carriers re&ains unchan!e%) As a resut, a ery s&a reerse current 7i fo7 in the%io%e un%er reerse 'ias con%ition)

P'o/"6'"

Fo'7*' Bi*-i)+

S"- D"-/'iio)

1 Connections are !ien as sho7n in 6i!)3)

3 The in2ut ota!e is arie% 'y aryin! the Re!uate% 4o7er #u22y (R4#$)

* The corres2on%in! ota!e across the %io%e (F6

$ an% the ano%e current (I6

$aues are note% an% ta'uate%)

The FI characteristics of the 4N ;unction %io%e un%er for7ar% 'ias

con%ition is %ra7n usin! the aues as sho7n in 6i!))

R""'-" ,i*-i)+

S"- D"-/'iio)

1 The connections are !ien as sho7n in 6i!)*)

3The in2ut ota!e is arie% 'y aryin! the Re!uate% 4o7er #u22y(R4#$)

* The corres2on%in! ota!e across the %io%e (FR$ an% the ano%e current(IR$ are note% an% ta'uate%)

The FI characteristics of the 4N ;unction %io%e un%er reerse 'iascon%ition is %ra7n usin! the aues as sho7n in 6i!))

R"-6!

Thus the FI characteristics of a 2n ;unction %io%e is o'taine% an% 2otte% on the !ra2h)


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Fig.1 Symbol of PN Junction Diode

Fig.2 Circuit diagram for forward bias condition

Fig.3 Circuit diagram for reverse bias condition

IN 4007

A

!0"#$ %IN 400&

& !0"&00$ mA

A

JA

' '

(P)

!0 * 30$ % %

!0"30$ %IN 400&

&

!0"&00$ +A

A

J

A

''

(P)!0 * 30$ % %


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TABULATION:

FORWARD BIAS CONDITION

).No%oltage across t,e -iode

%F !volts$Anode current IF!mA$

&

#

3

4

5

7

/

&0

REVERSE BIAS CONDITION

).No%oltage across t,e -iode

%(!volts$Anode current I(!A$

&

#

3

4

5

7

/

&0

-


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Fig.4 %"I C,aracteristics of a PN 1unction diode%( " (everse voltage2I( " (everse current2%F " Forard voltage2IF " Forard current2%B " Brea don voltage2

E%. No)3 STAIR CASE WIRING E4ERCISE

%C" Cut * off voltage

10

IF!ma$

I(

!A$

%B

%(!%$ %

F!%$

Forard Bias

%C

(everse Bias


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ESTIMATION OF THE MATERIALS

M*"'i*! S"/i#i/*io) 6*)i85ire FIR Insuate%, Cu 7ire si


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E% No .: WIRING E4ERCISE OF A FLUORESCENT LAMP CIRCUIT

AIM

a$ To %ra7 a neat circuit %ia!ra&

'$ To cacuate the si


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Therefore current throu!h the circuit,

5here, F Fota!e ratin!s of the a&2,CosO 4o7er factor of the circuit)

As the circuit contains ony incan%escent a&2 oa%s, 2o7er factor of the circuit &ay 'eassu&e% to 'e unity) Kno7in! the current throu!h the circuit, the si2osition 1 or 3, the a&2 7i !o7) 5hen one of the s7itches is in 2osition 1 an% the other in

2osition 3 the a&2 7i not !o7)

RESULT

6uorescent a&2 7irin! e8ercise is %one an% teste% the circuit)

1


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1.


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ESTIMATION OF THE MATERIALS

M*"'i*! S"/i#i/*io) 6*)i85ire FIR Insuate%, Cu 7ire si

12me102 - workshop practice lab manual

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